In this thesis, bipolar resistive switching characteristics could be observed on our all HfOx film by switching to LRS state by negative bias and to HRS state by positive bias. Both Pd/HfOx/TiN and Pd/Al/HfOx/TiN show the similar tendency to nitrogen treatment, thermal treatment, and the combined (nitrogen + thermal) treatment.
Thermal treatment can reduce operation voltage effectively, but it will increase HRS current owning to higher crystallinity of HfOx film. The nitrogen flow treatment can reduce of HRS current effectively, especially on Pd/Al/HfOx/TiN sample, but it will increase operation voltage and partially degrade the stable switching properties.
Adding slight nitrogen gas in the beginning of Al electrode deposition has more obvious benefits to reduce HRS current than Pd, which might be due to difference of the metal characteristics. Combining the nitrogen and RTA treatment together on our Pd/Al/HfOx/TiN film, both the advantages of reliable switching properties and lower HRS current could be obtained. Adding nitrogen during Pd electrode deposition has no obvious benefits to reduce leakage current. By an additional thermal treatment, the leakage current at HRS could be slight reduced. Inserting Al thin layer in the Pd/HfOx interface greatly improves the resistive switching characteristics of HfOx/TiN RRAM indicating that the interface is a critical issue for resistive switching. We believe that interface and bulk are both critical to the resistive switching characteristics, and the characteristics of interface or bulk could be modified by top electrode or thermal treatment. Possible model of our bipolar-switched HfOx film is the oxygen migration between TiN and HfOx film. TiN bottom electrode serves as an oxygen reservoir during SET process by negative bias, and re-oxidizes with HfOx film under positive bias during RESET process. Several factors are still needed being discussed such as forming process, operation mode, current compliance, and current values to
temperature effect to have a whole understanding of the secret of RRAM mechanism.
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姓 名：吳天佑
性 別：男
出生日期：民國七十一年四月五日
出 生 地：高雄市
住 址：高雄市新興區同愛街15號
學 歷：南台科技大學電機工程學系電能科技組 (民國九十一年九月~民國九十三年六月) 國立交通大學微電子奈米科技產業碩士專班 (民國九十六年七月~民國九十八年八月)
碩士論文：
氮氣和熱處理對氧化鉿薄膜的電阻式記憶體電性之效應
Effect of nitrogen and thermal treatment on resistance random access memory (RRAM) for HfOx film