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CHAPTER 5 A NEW ION SENSOR CHIP

6.2 FUTURE WORK

In the future, the performance of thermal imaging systems with cooled or uncooled FPA technologies will be further enhanced by the development of new detection methodologies and signal processing techniques. Moreover, the concept of military and commercial dual-use technology in IR imaging systems will lead to the cost-driven and application-oriented development. Some advanced development directions on IR imaging systems such as on-chip A/D conversion, optical link, background suppression, and smart-FPA concept are future directions.

In this thesis, cryogenic CMOS readout techniques for infrared detector array of IR imaging systems are proposed and analyzed. All the structures and technologies discussed above have their uniqueness and features for different applications. Due to the development of commercial uncooled IR imaging systems and the fast advancement of submicron CMOS technologies, high-p

circuit techniques and structure. Moreover, the emerging technologies of CMOS visible-light imaging systems will share the advantages of the developed IR imaging systems due to their similarities. Both will be driven by rapid development and wide

can be further modified and designed as new techniques for the room temperature application.

With innovative development of readout circuit, a new generation of CMOS imaging systems is highly expected.

REFERENCES

[1] R. J. Dempsey, D. G. Davis, R. G. Jr. Buice, R. A. Lodder, “Biological and medical applications of near infrared spectrometry,” in Applied Spectroscopy, vol. 50, no. 2, pp.

18A-34A, Feb. 1996.

[2] N. Itoh, K. Yanagisawa, T. Ichikawa, K. Tarusawa, and H. Kataza, “Kiso observatory near-infrared camera with a large format array,” in Proceedings of the SPIE, Infrared Technology XXI, vol. 2552, pp. 430-437, 1995.

[3] D. A. Scribner, M. R. Kruer, and J. M. Killiany, “Infrared focal-plane array technology,” in Proc. IEEE, vol. 79, no. 1, pp. 66-85, 1991.

[4] R. K. Kirshchman, Low-Temperature Electronics, New York, IEEE Press, 1989.

[5] E. R. Fossum and B. Pain, “Infrared readout electronics for space science sensors : state of the art and future directions,” in Infrared Technology XIX, Proc. SPIE 2020, pp. 262-285, 1993.

[6] B. Pain, S. Mendis, R. Schober, R. Nixon, and E. Fossum, “Low-Power, Low-Noise Analog Circuits for on Focal-Plane Signal Processing of Infrared Sensors,” in Infrared Detectors and Instrumentation, Proc. SPIE, vol. 1946, pp. 365-374, 1993.

[7] D. H. Pommerenig, D. D. Enders, and T. E. Meinhardt, “Hybrid silicon focal plane array development: An update,” in Proc. Soc. Pho-Opt. Instrum. Eng., vol. 267, pp.

23-30, 1981.

[8] J. C. Carson, “Application of advanced “Z” technology focal plane architectures,” in Proc. Soc. Pho-Opt. Instrum. Eng., vol. 930, pp. 164-182, 1988.

[9] E. T. Young, M. Scutero, G. H. Rieke, E. E. Haller, and J. W. Beeman, “High performance Ge:Ga arrays for the far infrared,” in Infrared Detectors and

Instrumentation, Proc. SPIE

[10] V. Gopal, “Spatial noise limite gCdTe hybrid focal plane array,” Infrared Physics & Technology, vol. 37, pp. 313-320, 1996.

y,” in 8th International Conference on

[13] ,” Opt. Eng., vol. 33, pp.

[15] Chung-Yu Wu, Far-Wen Jih and Tai-Ping Sun,

BC staring FPA,” in Infrared Detectors and Instrumentation, Proc.

[17] d infrared focal-plane

[18]

[19] C. Staller, L. Ramiirez, C. Niblack, M. Blessinger, and W. Kleiinhans, “A radiation , vol. 1946, pp. 68-77, April 1993.

d NETD performance of a H

[11] M. Kimata, H. Yagi, N. Yutani, K. Endo, and M. Nunoshita, “Schottky-barrier infrared focal plane arrays,” J. of the Japan Society of Infrared Science and Technology, vol. 5, pp. 33-42, 1995.

[12] A. Tanaka, S. Matsumoto, N. Tsukamoto, S. Itoh, T. Endoh, A. Nakazato, Y.

Kumazawa, M. Hijikawa, H. Gotoh, T. Tanaka, and N. Teranishi, “Silicon IC process compatible bolometer infrared focal plane arra

Solid-State Sensors and Actuators and Eurosensors IX., vol. 2, pp. 632-635, 1995.

J. Wolf, “Low-background far-infrared detectors and arrays 1492-1500, May 1994.

[14] I. M. Baker and R. A. Ballingall, “Photovoltaic CdHgTe - silicon hybrid focal planes,”

in Proc. Soc. Pho-Opt. Instrum. Eng., vol. 510, pp. 121-129, 1984.

Chih-Cheng Hsieh,

“Focal-Plane-Arrays and CMOS Readout Techniques of Infrared Imaging Systems,”

to be published in IEEE Trans. on Circuits and Systems for Video Technology, vol. 7, pp 594-605, August 1997

[16] N. Lum, J. Asbrock, R. White, R. Kelchner, L. Lum, L. Pham, C. McCreight, M.

McKelvey, R. Jr. McMurray, W. Forrest, and J. Garnett, “Low-noise, low-temperature, 256*256 Si:As I

SPIE, vol. 1946, pp. 100-109, April 1993.

K. Chow, J. P. Rode, D. H. Seib, and J. D. Blackwell, “Hybri arrays,” IEEE Trans. Electron Devices. vol. 29, no. 1, 1982.

P. Norton, “Infrared image sensors,” Opt. Eng., vol. 30, no. 11, pp. 1649-1660, 1991.

ager applications,” in

[20] yck, D. E. Cooper,

3, pp.704-715, 1994.

Direct-Injection Readout Structure for Infrared Detector,” in

[23] ckbody calibration

[24]

ad-salt lasers for calibration of IR-astronomy detectors,” in

[25]

[26] enbuhl, “An improved correlated double

. hard, low background multiplexer design for spacecraft im

Infrared Readout Electronics, Proc. SPIE, vol. 1684, pp. 175-181, 1992.

L. J. Kozlowski, W. V. McLevige, S. A. Cabelli, A. H. B. Vanberw

E. R. Blazejewski, K. Vural and W. E. Tennant, “Attainment of High Sensitivity at Elevated Operating Temperatures with Staring Hybrid HgCdTe-on-Sapphire Focal Plane Arrays,” Opt. Eng., vol. 33, no.

[21] Chih-Cheng Hsieh, Chung-Yu Wu, Far-Wen Jih, Tai-Ping Sun and Horng Chang, “A New CMOS Readout Circuit Design for the IR FPA with Adaptive Gain Control and Current-Mode Background Suppression,” in Proc. of 1996 IEEE International Symp.

on Circuits and Systems, vol. 1, pp. 137-140, May. 1996.

[22] Chung-Yu Wu, Chih-Cheng Hsieh, Far-Wen Jih, Tai-Ping Sun and Sheng-Jenn Yang,

“A New Share-Buffered

Infrared Technology XIX, Proc. SPIE, vol. 2020, pp. 57-64, 1993.

I. M. Mason, P. H. Sheather, J. A. Bowles, and G. Davies, “Bla

sources of high accuracy for a spaceborne infrared instrument: the Along Track Scanning Radiometer,” in Applied Optics, vol. 35, no. 4, pp. 629-639, 1996.

A. Lambrecht, M. Tschirschwitz, R. Grisar, U. Schiessl, J. Wolf, D. Lemke,

“Sub-threshold operated le

Infrared Physics & Technology, vol. 37, no. 1, pp. 173-179, 1996.

R. J. Kansy, “An response of a correlated double sampling circuit to 1/f noise,” IEEE J.

Solid-State Circuits, vol. 15, pp. 373-375, 1980.

H. M. Wey and W. Guggenbuhl, W. Gugg

sampling circuit for low noise charge-couple devices,” IEEE J. Solid-State Circuits, vol. 37, no. 12, pp. 1559-1565, 1990.

[27] E. T. Young, M. Scutero, G. Rieke, T. Milner, F. J. Low, P. Hubbard, J. Davis, E. E Haller, and J. Beeman, “Far-infrared focal plane development for SIRTF,” in Infrared

[28] onide focal

Readout Electronics, Proc. SPIE, vol. 1684, pp. 63-74, Apr. 1992.

A. Lockwood and W. Parrish, “Predicted performance of indium antim plane arrays,” Opt. Eng., vol. 26, no. 3, pp. 228-231, 1987.

R. H. Nixon, S. E. Kemeny, B. Pain, C. O. Staller, and E. R. Fossum, “256x256 CMOS active pixel sensor camera-on-a-chip,” IEEE Journal of Solid-State Circuits, vol. 31, pp. 2046-2050, Dec. 1996.

[30] Yu-Chuan Shih and Chung-Yu Wu, “A new CMOS pixel structure for low-dark-current and large-array-size imager applications,” IEEE Transactions on Circuits and Systems I, Feb. 2004.

H. Tian, B. Fowler, and A. E. Gamal, “Analysis of

photodiode active pixel sensor,” IEEE Journal of Solid-State Circuits, vol. 36, pp.

92-101, Jan. 2001.

Paul A. Hammond, Danish Ali, and David R. S. Cumming, “Desi

pH Sensor Using a Conventional 0.6-μm CMOS Process,” IEEE Sensors Journal, vol.

4, no. 6, pp. 706-712, Dec. 2004.

Wayne U. Wang, Chuo Chen, Keng-Hui Lin, Ying Fang, and Charles M

“Label-free detection of small-molecule-protein interactions by using nanowire nanosensors,” PNAS, vol. 102, no. 9, pp. 3208-3212, Mar. 2005.

Kazuaki Sawada, Takahiro Ohshina, Takeshi Hizawa, Hidekuni T

Ishida, “A novel fused sensor for photo- and ion- sensing,” Sensors and Actuators B, vol. 106, pp. 614-618, 2005.

姓 名 : 謝 仲 朋

系 (87年9月−91年6月) 國立交通大學IC設計產業研發碩士班 (94年2月−96年2月)

論文名稱 :

外線偵測器陣列之低溫互補式金氧

QUANTUM-DOT INFRARED DETECTOR ARRAY

簡 歷

學 歷 :

國立中山大學電機工程學

砷化銦/砷化鎵量子點紅 半讀出積體電路設計與分析

THE DESIGN AND ANALYSIS OF CRYOGENIC CMOS

READOUT INTEGRATED CIRCUIT FOR InAs/GaAs

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