10 yearsON State
Chapter 6 Furture Work
Following the investigations in this thesis, a number of potential projects could be taken up.
For the investigation on incorporating Au NPs into a PS-b-P4VP:
Further study on the electrical and optical properties of the PS/Au/P4VP corona-shell-core micellar structure, for example, proximity effect.
Further study on tuning the chemistry and density of the tails on the surfaces of NPs in order to realize the formation of the interfacial interaction of NPs.
For the investigation on the single-crystalline tetragonal structure formation by incorporating CdSe and Au NPs into PS-b-P4VP:
Further analysis could be carried out by 3-D tomography of TEM to directly determine the PS-b-P4VP/CdSe/Au single-crystalline tetragonal structure.
Further study on tuning the molecular weight of PS-b-P4VP to alter the shell and core sizes of PS-b-P4VP/CdSe micelles. In this way, we could tune the lattice constants of the PS-b-P4VP/CdSe/Au single-crystalline structure which could be applied in photonic crystal.
For the investigation on a memory device based on the nanostructured PS-b-P4VP thin film:
Further analysis of the Al filament formation could be carried out by a cross-section TEM image, a depth profile of SIMS, and a depth profile of XPS.
Further study on altering the electrode material to tune the memory behaviors of PS-b-P4VP. For example, using Cu instead of Al electrodes, the momery device might perform a lower writing voltage, a lower erasing voltage, a higher programming speed, and a high on-state current because of the higher diffusion rate and higher conductivity of Cu.
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Appendix 1
Quantitative calculations of Au NPs at the surface of a single P4VP domain.
SAXS analysis revealed that the average diameter of the P4VP cores (RP4VP) was 18 nm and that of the AuSC2Ph NPs (RAu) was 2.2 nm. In general, the densities of P4VP and Au before and after mixing were assumed to remain constant. Because the known volume ratio of P4VP to Au (ranging from 11.7 to 1.4%) in PS-b-P4VPSph/AuSC2Ph mixture was equal to that of a P4VP core to an unknown quantity of Au NPs [ 4 )3
structure, the number of Au NPs (nAu = ca. 66) was estimated using equation (A-1):
3
Subsequently, to calculate the percentage coverage of the Au NPs, we assumed that a Au NP could contribute a covered area equal to its maximum cross-sectional area (a great-circle area) of )2
(R2Au
π and that the total P4VP surface area was 4 4 )2 (RP2VP
π .
Thus, we obtained a percentage covered of 24.7% when using equation (A-2):
Covered area percentage ( ) 100% 4
To simplify the calculation, we ignore the fact that the P4VP surface area covered by an Au NP is cambered. In fact, an Au NP can cover more than )2
(R2Au
π ,
except when RP4VP >>RAu.
Appendix 2
Distance between the CdSe particles in a single P4VP domain.
We determined the average center-to-center and edge-to-edge interparticle distances between the CdSe NPs based on the feed of the CdSe loading (J. Am. Chem.
Soc. 2000, 122, 11465). The free volume per CdSe NP (Vfree) in the P4VP domain, which is defined by the average volume of an occupied CdSe NP, can be estimated using Eqs. (A-2-1) and (A-2-2):
where VCdSe/P4VP is the volume of a single CdSe NPs/P4VP composite domain, VP4VP
is the volume of the P4VP domain, VCdSe (22.45 nm3) is the volume of a CdSe NP (3.5 nm in diameter), and is the number of CdSe NPs in the P4VP domain. The center-to-center interparticle distance (D) was calculated using Eq. (A-2-3).
n
(A-2-3)
( )
Vfree 1/3D=
The edge-to-edge interparticle distance (d) was determined by assuming a cubic lattice model for the CdSe NPs. The values of d were calculated using Eq. (A-2-4):
d = D−2r =