Future Work

Although the effect of the plasma nitrdation and fluorination to the electrical characteristics and reliabilities of HfO2 and HfAlOx thin films has been examined in this research, there are still several issues that could be investigated in the future:

1. We could do more material analysis, like TEM, SIMS and XPS, to study the change of dielectric layers with or without plasma treatment.

2. We could study the leakage current mechanism change of the dielectric layers caused by the plasma treatment.

3. We could integrate the plasma technology to CMOSFET process flow to verify the effect of the plasma nitridation and plasma fluorination to the electrical characteristics of the transistors, like threshold voltage, mobility and sub-threshold swing.

4. We could try to use the plasma nitridation and fluorination technology to treat thinner

dielectric layers, whose EOT are less than 1 nm. The thin films could be made with integrating atomic layer chemical vapor deposition (ALD) technology and pre-deposition CF4 plasma treatment.

5. The plasma nitridation and fluorination technology could be used to treat thicker dielectric layers, whose physical thickness are about 20 nm. The thicker dielectric layers could be integrated in thin-film-transistors (TFT) and might be able to enhance the electrical characteristics and the reliability of the TFTs.

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個人學經歷資料表

姓名：陳柏寧

出生地：基隆市

性別：男

生日：民國 68 年 5 月 9 日

學歷：

高中：國立師範大學附屬高級中學 大學：國立清華大學電機工程學系 碩士：國立交通大學電子研究所固態組 博士：國立交通大學電子研究所固態組

學號：9311802

博士論文題目：

中文：電感耦合電漿氮化製程與氟化製程對鉿系高介電常數材料薄膜之效果

英文：The Effect of Inductively-Coupled Plasma Nitridation and Fluorination Process to Hf-based Dielectric Thin Films