Chapter 5 Conclusion
5.2 Future Work
For CPIII process application on improve NiSi thermal stability, surface carbon thin film will be an important issue which affects NiSi formation, so the process condition should be optimized to reduce the carbon film. In the case of N+ doped NiSi/Si structure, the relationship between N+ dopant condition and carbon dopant condition should be figure out. How to lower the effect of N+ dopant to surface NiSi and help carbon to increase thermal stability is a good direction to research. On the application of Si-C formation, surface amorphous layer quality is the main subject to conquer. Combine PAI process or low temperature implant technique with CPIII might be promising methods.
For low temperature carbon ion implantation, the application on increase NiSi thermal stability faced the same issue with CPIII. The research of how to lower the effect of N+ dopant to surface NiSi and help carbon to increase thermal stability is in need. On the application of Si-C formation, the annealing condition could be further improved. The condition of PLA as second step anneal need to be optimized, and other kind of annealing technique like flash anneal or spike anneal could try to use as second step anneal, too. Those research of annealing is necessary for Si-C forming
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and could be applied to samples implanted by different carbon implantation process.
The integration of Si-C stressor formation on source and drain region of MOSFET is the final target of the research. The high sheet resistance of Si-C stressor will decrease the devise performance and the benefit of Si-C stressor. The NiSi formation on source and drain region may solve this problem. Those subjects are all important for future research.
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