第四章 實驗結果與討論
4.5 常壓電漿陽極接合之應用
4.5.3 Glass-Al/AAO 的接合
(1) 實驗方法
將尺寸大小為 2 2 cm2之玻璃進行清潔的處理，並將陽極氧化鋁(anodic alumina oxide, AAO)薄膜試片放進濺鍍系統(sputter system)，濺鍍一層厚度約 4000 Å 之 Al 金屬薄膜，接著將玻璃蓋在 Al 金屬薄膜上，並放置到 x-y 軸移 生的痕跡影響拍攝時之效果。圖 4-15(a)為 glass-Al/AAO 接合完全後之試片，
而圖 4-15(b)則是試片進行冷鑲埋後之結果。
APPAB 接合之試片放置於室溫下一天，隔天 AAO 與玻璃是會有脫落分離的 現象產生。因此，此實驗現階段所使用的實驗參數，並無法讓 AAO 與玻璃 形成鍵結，而最佳實驗參數則需要再進行研究與探討。
(a) (b)
Figure 4-15 Photographs of (a) glass-Al/AAO specimen bonded with APPAB, (b) cold mounting of bonded specimen.
(a)
(b) (c)
Figure 4-16 SEM images of glass-Al/AAO specimen bonded using an APPAB technique.
AAO
glass Al
AAO
Al glass AAO
Al glass
4.6 微型熱電致冷晶片之研製
本研究將利用新開發之常壓電漿陽極接合技術，接合陽極氧化鋁於玻璃 基板上，再使用電化學沉積(electrochemical deposition)之技術，將熱電材料 (thermoelectric materials)電鑄於 AAO 孔洞中，製作出具奈米結構之微型熱電 致冷晶片(micro thermoelectric cooler, TEC)，其製作流程圖如圖 3-4 所示，
以下將分成小節介紹其製程與結果。
圖 4-18 為 n-type (Bi2Te3)熱電材料電鑄於 AAO 孔洞中之 SEM 圖，圖
由圖 3-4 可知道致冷晶片之製作流程，第一部分須先在 AAO 上定義出
(a) (d)
(b) (e)
(c) (f)
Figure 4-18 SEM images of n-type Bi2Te3 electroformed into AAO template (a)
(b) (d)
(c) (e)
(a) (b)
Figure 4-19 (a) Dimension design of bottom electrode; (b) Shielding mask of bottom electrode.
(a) (b) (c)
Figure 4-21 Glass-Al/AAO specimens after APPAB for fabricating TEC device.
第五章 結論與未來展望
5.1 結論
本研究開發出創新性常壓電漿陽極接合(atmosphere pressure plasma anodic bonding, APPAB )技術，利用常壓電漿系統之噴頭作為陽極接合的上 電極，將藉由電漿本身具有的溫度，來取代傳統式陽極接合需由試片底部
3. 上電極距離試片越近時，其接合面積與效果會越好，而當固定噴頭與
8. 利用 APPAB 接合技術，已成功進行 glass-Al/glass 接合，而 glass-Ni/Si 與 glass-Al/AAO 兩組試驗，則需再找尋較適當之接合參數，與其他熱 膨脹係數相接近之材料進行實驗工作。
5.2 未來展望
3. 本研究利用 APPAB 技術進行 glass-Al/glass、glass-Ni/Si 與 glass-Al/AAO 之接合試驗，除了需再找出最佳之接合參數，以達到完全接合之目的
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