4-1-1
-4.1 4.2 300K HEMT
MOS-HEMT (IDS)- (VDS)
- (VGS) 1V -2V
-0.5V/step 4.3 HEMT MOS-HEMT
-MOS-HEMT
xxx
(GVS) IDS HEMT 1V MOS-HEMT GVS
Samples Conventional MOS-HEMT
Idss0 (mA/mm) 172 254.7
Id,max (mA/mm) 374.6 387
gm,max (mS/mm) 178.5 194.4
GVS (V) 1 1.2
Vth (V) -1.1 -1.5
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MOS-HEMT
4.2 MOS-HEMT
Samples Conventional MOS-HEMT
BVGD(V) -11.2 -18.6
Von(V) 0.4 0.6
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4.3 VDS = 2.5 V (fT) (fmax)
MOS-HEMT HEMT
7.96% 12.4% MOS-HEMT
Samples Conventional MOS-HEMT
fT (GHz) 16.58 17.9
fmax (GHz) 28.05 31.53
4.3 MOS-HEMT fT fmax.
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4.11(a) 4.12(a) 4.13(a) 4.14 (a)
4.11 (b) 4.12 (b) 4.13 (b) 4.14 (b)
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Conventional MOS-HEMT
Lg (nH) 0.0005 0.04558
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Cpd (pF) 0.409 0.01623
Cpg (pF) 0 0.017
Conventional MOS-HEMT
Cgs (pF) 0.3155 0.6
Conventional MOS-HEMT
Cgs,eq (pF) 0.3155 0.30897
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-
-MOS-HEMT C gd,eq C gs,eq
(4.3)
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31.53 GHz ( 12.4%) MOS-HEMTs
S
HEMT
HEMT
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S.I. GaAs Substrate
2.1 HEMT
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Drain Gate Source (AuGeNi/Au) (AuGeNi/Au)
(Ni/Au)
Oxide Layer 100Å
n-Al0.24Ga0.76As 300Å Schottky Contact
S.I. GaAs Substrate
2.2 MOS-HEMT
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2.3
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2.4 HEMT
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2.5 InxGa1-xAs InAs
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2.6 (a) HEMT RF
2.6 (b)MOS-HEMT RF
a)
b)
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2.7 HEMT
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3.1
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3.2 S
a1,a2 b1,b2 Two-Port
Network
a1 b2
b1 a2
Port-1 Port-2
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3.3
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3.4 Y Network
3.5 Y12 3.6 Y22
3.7 Y21 3.8 Y11
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3.9 Y
3.10 Vds HEMT
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3.11 HEMT
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0 1 2 3 4
0 100 200 300 400
Conventional
Drain-Source Voltage (V)
Drain Current Density (mA/mm) VG=1 ~ -2V ,Step= - 0.5V
4.1 HEMT 300K
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0 1 2 3 4
0 100 200 300 400 500
MOS-HEMT
Drain-Source Voltage (V)
Drain Current Density (mA/mm) VG=1 ~ -2V ,Step= - 0.5V
4.2 MOS-HEMT 300K
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0 1 2 3 4
0 100 200 300 400 500
Drain-Source Voltage (V)
Drain Current Density (mA/mm) VG=1 ~ -2V ,Step= - 0.5V Conventional MOS-HEMT
4.3 HEMT MOS-HEMT 300K
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Gate - Source Voltage (V)
Drain Current Density (mA/mm)
0
Extrinsic Transconductance (mS/mm)
VDS=3V
4.4 HEMT 300 K
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Gate - Source Voltage (V)
Drain Current Density (mA/mm)
0
Extrinsic Transconductance (mS/mm)
VDS=3V
4.5 MOS-HEMT 300 K
lxx
Gate - Source Voltage (V)
Drain Current Density (mA/mm)
0
Extrinsic Transconductance (mS/mm)
VDS=3V
4.6 MOS-HEMT 300 K
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Gate Current Density (mA/mm)
Gate-Drain Voltage (V)
4.7 MOS-HEMT 300 K
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4.10 HEMT
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4.11 HEMT S11 Smith Chart
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4.12 HEMT S12 Polar
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4.13 HEMT S21 Polar
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4.14 HEMT S22 Smith Chart
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4.11 MOS-HEMT
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4.16 MOS-HEMT S11 Smith Chart
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4.17 MOS-HEMT S12 Polar
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4.18 MOS-HEMT S21 Polar
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4.19 MOS-HEMT S22 Smith Chart
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