具有不同閘極結構化合物半導體高電子遷移率電晶體之高頻參數萃取與元件模型解析

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Parametric Extraction and High-Frequency Device Model

Build-Up for pHEMTs with Different Gate Structure

D9871410

D9871569

D9871674

D9871303

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i ePaper(2013 ) / - -RF InGaAs AlGaAs/InGaAs (HEMTs) InGaAs

(impact ionization threshold field) InGaAs

(kink effect)

-

-Microwave Office (CAD)

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-ii

ePaper(2013 )

RF

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i

ePaper(2013 )

Abstract

This work compares fundamental device performance of

Al

0.24

Ga

0.76

As/In

0.2

Ga

0.8

As

metal-oxide-semiconductor

high

electron mobility transistor (MOS-HEMT) by using ozone water

technique with respect to an unpassivated conventional device.

We’ve successfully established high-frequency device models

by using the Microwave Office CAD tool based on the

"Cold-FET" theory. Four S-parameter sets have been precisely

extracted at the same time to establish the highly accurate and

physically meaningful high-frequency model. The results are

promisingly useful for the RFIC design technologies.

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ii ePaper(2013 ) ...i 1 _{... 1} 2 _{... 4} 2-1 _{... 5} 2-2 _{... 9} 2-2-1 ( Ls, Lg, Ld ) ... 10 2-2-2 ( Rs, Rg, Rd ) ... 11 2-2-3 ( Cpd, Cpg ) ... 11 2-2-4 ( Cgs, Cgd, Cds ) ... 12 2-2-5 ( gm ) ... 12 2-2-6 ( Rds ) ... 13 2-2-7 _{( τ ) ... 14} 2-2-8 ( Ri ) ... 14 3 _{... 15} 3-1 _{... 15} 3-1-1 _{... 15}

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iii ePaper(2013 ) 3-1-2 _{... 17} 3-1-3 S _{... 17} 3-2 _{... 19} 3-3 _{... 20} 3-4 _{... 26} 3-4-1 HEMT _{... 26} 3-4-2 _{... 27} 3-4-3 _{... 28} 4 _{... 29} 4-1 _{... 29} 4-1-1 - _{... 29} 4-1-2 _{... 30} 4-1-3 - - _{... 31} 4-2 _{... 33} 4-3 _{... 35} 4-3-1 HEMT _{... 35} 4-3-2 MOS-HEMT _{... 39} 4-3-3 _{... 42} 5 _{... 46}

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iv ePaper(2013 ) ... 48 2.1 HEMT ... 52 2.2 MOS-HEMT ... 51 2.3 _{... 53} 2.4 HEMT _{... 53} 2.5 InxGa1-xAs InAs ... 54 2.6 HEMT MOS-HEMT RF _{... 55} 2.7 HEMT _{... 57} 3.1 _{... 57} 3.2 S _{... 58} 3.3 _{... 59} 3.4 Y _{Network ... 60} 3.5 Y12 ... 60 3.6 Y22 ... 60 3.7 Y21 ... 60 3.8 Y12 ... 60 3.9 Y _{... 61}

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v ePaper(2013 ) 3.10 Vds HEMT ... 62 3.11 HEMT _{... 63} 4.1 HEMT _{... 64} 4.2 MOS-HEMT _{... 65} 4.3 HEMT MOS-HEMT _{... 66} 4.4 _{... 67} 4.5 MOS-HEMT _{... 68} 4.6 MOS-HEMT _{... 69} 4.7 MOS-HEMT _{... 70} 4.8 HEMT RF _{... 71} 4.9 MOS-HEMT RF _{... 72} 4.10 HEMT _{... 73}

4.11 HEMT S11 Smith Chart ... 74

4.12 HEMT S12 Polar ... 75

4.13 HEMT S21 Polar ... 76

4.14 HEMT S22 Smith Chart ... 77

4.15 MOS-HEMT _{... 78}

4.16 MOS-HEMT S11 Smith Chart ... 79

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vi

ePaper(2013 )

4.18 MOS-HEMT S21 Polar ... 81

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i ePaper(2013 )

1

(MMIC) (HEMT) (RFIC) - / (HEMTs) (MMIC)

(impact ionization threshold field) InGaAs

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ii ePaper(2013 ) AlGaAs / : (1) (<40 ) (2) (3) (4) / (5) [10]-[13] AlGaAs MMIC IC Microwave Office (CAD) / - -(MOS-Gate) (Schottky-Gate)

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iii

ePaper(2013 )

RF RF

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iv ePaper(2013 )

2 HEMT

(1) (Intrinsic Transconductance, gm) fT (2) (n, ΦB, Ig) (3) (Output Conductance, gds) (AV = gm/gds) (HEMT)

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v ePaper(2013 ) 2-1 HEMT [7] (HEMT) - - (MOS-HEMT) (dangling bond) 2.1 Al0.24Ga0.76As Ni/Au

HEMT Double δ-doped HEMT

GaAs 5000Å GaAs 230Å Al0.22Ga0.78As δ- 25Å Al0.22Ga0.78As 150Å In0.24Ga0.76As 25Å Al0.22Ga0.78As δ- 300Å Al0.22Ga0.78As 800Å Si n+ -GaAs 2.2 MOS-HEMT Ni/Au Al0.24Ga0.76As 100Å

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vi ePaper(2013 ) 銦1) 銦Cap Layer) HEMT 1018 cm-3 Si (gm) (ft) HEMT (gate recess)

(parallel conduction effect)

銦2) 銦Schottky Layer)

AlGaAs /InGaAs

AlGaAs InGaAs

(high sheet charge density) AlGaAs

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vii

ePaper(2013 )

銦3)δ- (δ-doped Carrier Supply Layer)

δ- HEMT 銦a) (Drain) 銦b) 銦c) 銦d) δ-V FET 2µm δ- HEMT δ- HEMT δ-銦4) (Spacer Layer) HEMT

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viii

ePaper(2013 )

δ-(sheet charge density)

20 Å ~50 Å

銦5) (Pseudomorphic InGaAs Channel Layer)

InGaAs HEMT 2.3 InGaAs AlGaAs 2.4 InGaAs GaAs AlGaAs InGaAs 2.5 InGaAs GaAs InGaAs InGaAs 晧

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ix ePaper(2013 ) 6 GaAs - GaAs AlGaAs

AlGaAs GaAs GaAs

AlGaAs

2-2

(HEMTs) S y z h 100 MHz y z h

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x ePaper(2013 ) S 20 50GHz S 50GHz 2.6 HEMT MOS-HEMT RF -

-Cgd,ox Cgs,ox - Cds,ox

50GHz S 2.7 2-2-1 ( Lssss L_g L_d ) Lg Ld Ls Lg Ld 5 10pH Ls 1pH 0.1~0.3pH

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xi ePaper(2013 ) 2-2-2 ( Rs Rg Rd ) Rs Rg Rd Rs Rd Rg Rs Rd S 2-2-3 ( Cpd Cpg ) : Cpg Cpd Cpg Cpd

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xii ePaper(2013 ) Cpg Cpd fF S 2-2-4 ( Cgs Cgd Cds ) Cgs Cgd - -- Cgs Cgd Cgs S - Cds Cds Cgs 1 pF/mm Cgd Cgs Cgs Vds = 0 V Cgs Cgd 2-2-5 ( gm ) gm Ids Vgs Ids Vgs

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-xiii ePaper(2013 ) I ds g m _V gs ∂ = ∂ gm - Vds Ids - Vgs (2.2) 2-2-6 ( Rds ) Rds gds gds Ids Vds -Ids-Vds (2.3) 1 gs ds ds V constant ds ds I g R V = ∂ = = ∂

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xiv ePaper(2013 ) 2-2-7 ( τ ) -τ 1 ps 2-2-8 ( Ri ) Ri S11 Ri S11 Ri

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xv ePaper(2013 )

3 3-1

S 3-1-1 (Test

Fixture Measurement) (On-wafer Measurement)

(1)

(Device Under Test, DUT)

(Chip-Form)

(Carrier Assembly) (Bonding Wire)

(Metal Pad) (Microstrip Line)

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xvi ePaper(2013 ) 3.1 Midsection Midsection (2) (Coplanar Probes)

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xvii ePaper(2013 ) 3-1-2 y z h 100 MHz y z h (open) (short) S 3-1-3 S S (incident) (transmission) (reflection)

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xviii

ePaper(2013 )

3.2

S 20

50GHz

(1) Network Analyzer (DUT) S

DUT

(2) Synthesized Sweeper

(3) Test Set (Port-1 Port-2)

S

(4) DC Bias Supplies

S 50ohm S DUT

Port-1 Port-2 terminate

S11 S21 Test Set DUT Port-2

Port-1 terminate

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xix ePaper(2013 ) S S (1) S (2) (3) (Wafer-Probing System) (Network Analyzer)

3-2

[8]- [10]

Dambrine et al. - Vds S - Vds S

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xx ePaper(2013 ) Rds

3-3

[11]- [15]

3.3 HEMT HEMT Cpg Cpd Rg Rd Rs Lg Ld Ls - Cgs -Cds - Cgd gm Rds τ Ri Y PI Y Y 3.4 Y (

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xxi ePaper(2013 ) ) 3.4 Y11 Y22 Y12 Y21 Y (3.1) (3.2) Y (3.3) (3.6) (3.3) (3.4) (3.5) (3.6) HEMT Y V2 - Cgs Ri

i

1 y

=

11 _v

v = 0

2

1 i

1 y

=

12 _v

v = 0

1

2 i

2 y

=

21 _v

v = 0

2

1 i

2 y

=

22 _v

v = 0

1

2

i = y v + y v 1 11 1 12 2 i = y v + y v 2 21 1 22 2

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xxii ePaper(2013 ) (Bypass) - Cgs 3.5 Y12 (3.7) (3.7) Y22 3.6 V2 i2 Y22 (3.8) (3.8) 3.7 V2 V1 i2 Y21 (3.9) (3.9) Y11 3.8 i1 (3.10) (3.10) y (3.7) (3.8) (3.9) (3.10) 1 y = + jw(C +C ) 22 _R ds gd ds y = j C 12 gd 2 2 w R C C i gd gs y = + jw +C 11 _{1+w C}2 2 _R2 _{1+ w C}2 2 _R gd gs i gs i           -jw g e m y = jwC 21 _{1+jwR C} gd i gs τ

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xxiii ePaper(2013 ) 5GHz 1+w2Ri2Cgs2 1 (3.11) (3.12) 2 2 y = w R C + jw C + C 11 i gd gs gd       y = g jw C + g R C + 21 m gd m i gs τ       _ _   1 y = + jw(C +C ) 22 ds gd y = j C 12 gd 2 2 w R C C i gd gs y = + jw +C 11 _{1+w C}2 2 _R2 _{1+ w C}2 2 _R gd gs i gs i           -jw g e m y = jwC 21 _{1+jwR C} gd i gs τ 1 y = + jw(C +C ) 22 _R ds gd ds y = j C 12 gd

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xxiv

ePaper(2013 ) (3.13)

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xxv ePaper(2013 ) HEMT Y Y Cgs , Ri , gm , τ , Cgd , Rds Cds Y Y 3.9 Y (a) S (b) S Z Ls Ld (c) Z Y Cpg Cpd (d) Y Z Rg Rs Ls Rd (e) Z Y 3.9 HEMT Y Y

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-xxvi ePaper(2013 ) Cgs Ri gm τ - Cgd Rds - Cds Z

3-4

[16]

3-4-1 HEMT HEMT -- HEMT - Cds - -- Cgs -Cgd Ri Rds 3.10 Vds HEMT - Vds - Cgs - Cds HEMT Cpg Cpd

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xxvii ePaper(2013 ) 3-4-2 [17] -- -(fringing -Capacitance) (3.15) Cf GHz (e.g.5GHz) Y 3.11 3.11 Y (3.16) (3.17) (3.18) (3.16) (3.18) Cpg Cpd Cf C = C = C gs gd f y11= jw C + 2C pg f       y = y = jwC 12 21 － f y = jw C + C 22 f pd      

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xxviii ePaper(2013 ) 3-4-3 [18]-[20] Cpg Cpd Z Z Rs Rd Rg Lg Ls Ld (3.19) (3.20) (3.21) Z Rc nkT qI g Z12 Ls Z11 Lg Z22 Ld Z12 Rs Z11 Rg Z22 Rd R _nkT c Z = R + R + + + jw L + L 11 s g ₃ _qI s g g       R c Z = Z = R + + jwL 12 21 s ₂ s

(

)

Z = R + R + R + jw L + L 22 s d c s d

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xxix ePaper(2013 )

4 4-1

1.2 × 100 µm2 7 µm KEITHLEY 4200 4-1-1 -4.1 4.2 300K HEMT MOS-HEMT (IDS)- (VDS) - (VGS) 1V -2V

-0.5V/step 4.3 HEMT MOS-HEMT

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xxx ePaper(2013 ) 4-1-2 4.4 4.5 HEMT MOS-HEMT VDS = 3 V (gm) (IDS) VGS 4.6 4.1 MOS-HEMT IDS gm GVS Vth 4.1 - (Idss) (Id,max) MOS-HEMT gm HEMT MOS-HEMT (GVS) IDS HEMT 1V MOS-HEMT GVS

Samples Conventional MOS-HEMT

Idss0 (mA/mm) 172 254.7

Id,max (mA/mm) 374.6 387

gm,max (mS/mm) 178.5 194.4

GVS (V) 1 1.2

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xxxi ePaper(2013 ) 1.2V AlGaAs IDSS0 , ID,max , gm,max GVS [21] (4.1) ΦB ∆EC InxGa1-xAs (d+∆d) 2DEG 4.1 MOS-HEMT 4-1-3 - 4.7 MOS-HEMT -(BVGD) (Von) VGD 4.2 MOS-HEMT - HEMT ∆E n (d + ∆d) φ c 2DEG B V = - -th _q _q _ε

mm

mA

w

I

G

/

1 =

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xxxii

ePaper(2013 )

MOS-HEMT

4.2 MOS-HEMT

BVGD(V) -11.2 -18.6

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xxxiii ePaper(2013 )

4-2

0.2 50 GHz HP8510B 1.2×200 µm2 7 µm 0 dB H21 fT fmax (MAG) fT fmax (4.2) (4.3) 4.8 4.9 MOS-HEMT (fT) (fmax) 2 ( ) g m f T _C _C GS GD π ≈ + max 1 2 2[ ( ) 2 ] 0 f T f G R R C G S π GD ≈ + +

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xxxiv

ePaper(2013 )

4.3 VDS = 2.5 V (fT) (fmax)

MOS-HEMT HEMT

7.96% 12.4% MOS-HEMT

fT (GHz) 16.58 17.9

fmax (GHz) 28.05 31.53

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xxxv ePaper(2013 )

4-3

4-3-1 HEMT S HEMT 0.2 GHz 50 GHz 10 GHz Cold Model HEMT (1) (Ls , Ld , Lg , Rs , Rg , Rd , Cpg , Cpd) (2) (Cgs , Cgd ,Cds , gm , gd , Ri , τ) Microwave Office S

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xxxvi ePaper(2013 ) (1) Vds = 0 V Vgs = 1 V (2) Vds = 0 V Vgs= -3 V (3) Vds = 2 V Vgs = -1.5 V 1. Vds = 0 V Vgs = 1 V 4.4 Rs (ohm) 1.322 Rg (ohm) 3.22 Rd (ohm) 124 Ls (nH) 0.0134 Lg (nH) 0.0005 Ld (nH) 0.05918 4.4 2. Vds = 0 V Vgs = -3 V 4.5 Cpg (pF) 0 Cpd (pF) 0.0409 4.5

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xxxvii ePaper(2013 ) 3. Vds = 2 V Vgs = -1.5 V 4.6 Cgs (pF) 0.3155 Cgd (pF) 0.0486 Cds (pF) 0 gm (mS) 30 gd (mS) 0.54348 Ri (ohm) 19.96 τ_(ps) _3.35 4.6 Microwave Office

Smith Chart Polar S

Smith Chart

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xxxviii

ePaper(2013 )

4.11(a) 4.12(a) 4.13(a) 4.14 (a)

4.11 (b) 4.12 (b) 4.13 (b) 4.14 (b)

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xxxix

ePaper(2013 )

4-3-2 MOS-HEMT

MOS-HEMT -

-Cgd,ox Cgs,ox - Cds,ox

S MOS-HEMT 0.2 GHz 50 GHz 10 GHz Cold Model MOS-HEMT (1) (Ls , Ld , Lg , Rs , Rg , Rd , Cpg , Cpd)

(2) (C gs,ox , Cgd,ox , Cds,ox , Cgs , Cgd , Cds , gm , gd, Ri , τ)

Microwave Office

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xl ePaper(2013 ) (1) Vds = 0 V Vgs = 1 V (2) Vds = 0 V Vgs = -3 V (3) Vds = 2 V Vgs = - 1.5 V 1. Vds = 0 V Vgs = 1 V 4.7 Rs (ohm) 0.982 Rg (ohm) 13.17 Rd (ohm) 0 Ls (nH) 0.0041 Lg (nH) 0.04558 Ld (nH) 0.0564 4.7 2. Vds = 0 V Vgs = -3 V 4.8 Cpg (pF) 0.017 Cpd (pF) 0.01623 4.8

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xli ePaper(2013 ) 3. Vds = 2 V Vgs = -1.5 V 4.9 Cgs (pF) 0.6 Cgd (pF) 0.0246 Cds (pF) 0 Cgs,ox (pF) 0.637 Cgd,ox (pF) 0.5111 Cds,ox (pF) 0.009 gm (mS) 33.2 gd (mS) 0.5102 Ri (ohm) 10.09 τ_(ps) _3.61 4.9 Microwave Office

Smith Chart Polar S

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xlii

ePaper(2013 )

Smith Chart

4.15

4.16 (a) 4.17 (a) 4.18 (a) 4.19 (a)

4.16 (b) 4.17 (b) 4.18 (b) 4.19 (b) 4-3-3 Conventional MOS-HEMT Lg (nH) 0.0005 0.04558 Ls (nH) 0.0134 0.0041 Ld (nH) 0.05918 0.0564 Rs (ohm) 1.322 0.982 Rg (ohm) 3.22 13.17 Rd (ohm) 124 0

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xliii ePaper(2013 ) Cpd (pF) 0.409 0.01623 Cpg (pF) 0 0.017 Conventional MOS-HEMT Cgs (pF) 0.3155 0.6 Cgd (pF) 0.0486 0.0246 Cds (pF) 0 0 Cox,gs (pF) 0.637 Cox,gd (pF) 0.5111 Cox,ds (pF) 0.009 Conventional MOS-HEMT Cgs,eq (pF) 0.3155 0.30897 C gd,eq (pF) 0.0486 0.02347 Cds,eq (pF) 0 0.009 gm (mS) 30 33.2 gd (mS) 0.54348 0.5102 Ri (ohm) 19.96 10.09 τ_(ps) _3.35 _3.61

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xliv ePaper(2013 ) MOS-HEMT (1) - -MOS-HEMT gm,max (2) MOS-HEMT gd (3) - - (1) (Rs , Rd) Rs , Rd (2) - (C ds,eq) MOS-HEMT - MOS-HEMT C ds,eq HEMT

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xlv

ePaper(2013 )

-

-MOS-HEMT C gd,eq C gs,eq

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xlvi ePaper(2013 )

5

/ -HEMTs MOS (C gd,eq ,C gs,eq) HEMT / MOS-HEMTs 194 mS/mm ( 8.9%) 254.7 mA/mm ( 48%) -18.6 V ( 66%) 17.9 GHz ( 8%) 31.53 GHz ( 12.4%) MOS-HEMTs S HEMT HEMT

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xlvii

ePaper(2013 )

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xlviii

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Drain Gate Source (AuGeNi/Au) (AuGeNi/Au)

(Ni/Au)

n+-In0.01Ga0.99As Cap 800Å

n-Al0.24Ga0.76As 300Å Schottky Contact

δ_(n+₎

i-Al0.24Ga0.76As 25Å Spacer Layer

i-Al0.2Ga0.8As 150Å Channel Layer

δ_(n+₎

i-Al0.24Ga0.76As 230Å Buffer Layer

i-GaAs 5000Å Buffer Layer S.I. GaAs Substrate

2.1 HEMT

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Drain Gate Source (AuGeNi/Au) (AuGeNi/Au)

(Ni/Au)

Oxide Layer 100Å

n-Al0.24Ga0.76As 300Å Schottky Contact

δ_(n+₎

i-Al0.2Ga0.8As 150Å Channel Layer

δ_(n+₎

i-Al0.24Ga0.76As 230Å Buffer Layer

i-GaAs 5000Å Buffer Layer S.I. GaAs Substrate

2.2 MOS-HEMT

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lvi ePaper(2013 ) 2.6 (a) HEMT RF 2.6 (b)MOS-HEMT RF a) b)

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lix ePaper(2013 ) 3.2 S a1,a2 b₁,b₂ Two-Port Network a1 b2 b1 a2 Port-1 Port-2

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ePaper(2013 )

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lxi ePaper(2013 ) 3.4 Y Network 3.5 Y12 3.6 Y22 3.7 Y21 3.8 Y11

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lxii ePaper(2013 ) 2 2 w R C C i gd gs y = + jw +C 11 _{1+w C}2 2 _R2 _{1+ w C}2 2 _R gd gs i gs i           -jw g e m y = jwC 21 _{1+jwR C} gd i gs τ 1 y = + jw(C +C ) 22 _R ds gd ds y = j C 12 gd 11 12 21 22 s s s s         Z jwL Z 11 g 12 Z Z jwL 21 22 d         Y jwC Y 11 pg 12 Y Y jwC 21 22 pd         Z R Z R 11 s 12 s R jwL jwL g s s Z R Z R 21 s 22 s jwL R jwL s d s                 S Z Y Z Z Y Z Y 2 2 y = w R C + jw C + C 11 i gd gs gd       y = g jw C + g R C + 21 m gd m i gs τ       _ _   1 y = + jw(C +C ) 22 _R ds gd ds y = j C 12 gd 5GHz 1+w2Ri2Cgs2 1

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3.9 Y

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lxv ePaper(2013 ) 0 1 2 3 4 0 100 200 300 400 Conventional Drain-Source Voltage (V) D ra in C u rr en t D en si ty ( m A /m m ) _V G=1 ~ -2V ,Step= - 0.5V 4.1 HEMT 300K

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lxvi ePaper(2013 ) 0 1 2 3 4 0 100 200 300 400 500 MOS-HEMT Drain-Source Voltage (V) D ra in C u rr en t D en si ty ( m A /m m ) V_G=1 ~ -2V ,Step= - 0.5V 4.2 MOS-HEMT 300K

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lxvii ePaper(2013 ) 0 1 2 3 4 0 100 200 300 400 500 Drain-Source Voltage (V) D ra in C u rr en t D en si ty ( m A /m m ) _V G=1 ~ -2V ,Step= - 0.5V Conventional MOS-HEMT 4.3 HEMT MOS-HEMT 300K

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lxviii ePaper(2013 ) -3 -2 -1 0 1 2 0 100 200 300 400 500 Conventional

Gate - Source Voltage (V)

D ra in C u rr en t D en si ty ( m A /m m ) 0 50 100 150 200 250 E x tr in si c T ra n sc o n d u ct a n ce ( m S /m m ) V_DS=3V 4.4 HEMT 300 K

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lxix ePaper(2013 ) -3 -2 -1 0 1 2 0 100 200 300 400 500 MOS-HEMT

D ra in C u rr en t D en si ty ( m A /m m ) 0 50 100 150 200 250 E x tr in si c T ra n sc o n d u ct a n ce ( m S /m m ) V_DS=3V 4.5 MOS-HEMT 300 K

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lxx ePaper(2013 ) -3 -2 -1 0 1 2 0 100 200 300 400 500 Conventional MOS-HEMT

D ra in C u rr en t D en si ty ( m A /m m ) 0 50 100 150 200 250 E x tr in si c T ra n sc o n d u ct a n ce ( m S /m m ) V_DS=3V 4.6 MOS-HEMT 300 K

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lxxi ePaper(2013 ) -20 -10 0 -1.0 -0.5 0.0 0.5 1.0 Conventional MOS-HEMT Gate-Drain Voltage(V) G a te C u rr en t D en si ty (m A /m m ) 0 1 0.0 0.5 1.0 G a te C u rr en t D en si ty ( m A /m m ) Gate-Drain Voltage (V) 4.7 MOS-HEMT 300 K

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lxxii ePaper(2013 ) 0.1 1 10 0 10 20 30 40 f_T f_max Frequency (GHz) G a in ( d B ) V DS= 2.5 V,VG= -0.5 V f_T = 16.58 GHz f_max = 28.05 GHz 4.8 HEMT VDS = 2.5 V RF

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lxxiii ePaper(2013 ) 0.1 1 10 0 10 20 30 40 f_T f_max Frequency (GHz) G a in ( d B ) V DS= 2.5 V,VG= -0.5 V f_T = 17.9 GHz f_max = 31.53 GHz 4.9 MOS-HEMT VDS = 2.5 V RF

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