• 沒有找到結果。

C ont act r esi st ance, R

cont

( Ω )

Fig. 4-13 The variation of the linear regime resistance of NPB-passivated under different UV-light illumination time

0 20 40 60 80 100 120 0.0

0.1 0.2 0.3 0.4 0.5

VD = -2V

UV illumination time ( minutes ) Field effect mobility ( cm2 / V-sec ) NPB passivation

without NPB passivation

Fig. 4-14(a) The field effect mobility vs UV illumination period plotted and summarized

Fig. 4-14(b) The variation of the linear regime field-effect mobility under UV-light illumination.( the literatures with SnO2 film)

( Electrochem. Solid-State Lett. vol 9, pp.G251 2006 )

0 20 40 60 80 100 120

UV illumination time ( minutes )

Threshold Voltage (V)

Fig. 4-15 The variation of the linear regime threshold voltage under different UV-light illumination times

0 20 40 60 80 100 120 Contact resistance, R cont ( Ω )

UV illumination time ( minutes ) Rfilm, NPB passivation

Rcont, NPB passivation Rfilm, without NPB passivation Rcont, without NPB passivation

Table 2 The transfer characteristics of the OTFTs before and after passivation with TiO2 ,NPB, NPB/Mg/TiO2/PDMSlayers compared with literatures

Chapter 5 Conclusion

5-1 Conclusion

In conclusion, the highly transparent NPB film was used as the passivation layer for pentacene OTFTs. After the passivation process, the OTFTs threshold voltage was reduced, the subthreshold swing was increased, and the on/off ratio was reduced, but the field-effect mobility was almost unchanged. It was clear that the NPB passivation will not damage the organic pentacene film.

The device degradation under UV-light illumination was prevented after capping the thermally-deposited NPB film. The high energy UV-light (175~254nm wavelength) was constantly applied onto the passivated device. After several periods time of 10, 20, 40, 80, and 120 minutes, the field-effect mobility of NPB passivated OTFTs gradually degraded from 0.48 to 0.30cm2/Vs. However, the other device without passivation will rapidly become invalid, and showed a larger threshold-voltage shift than the passivated OTFTs. The NPB film is suitable to protect the pentacene OTFTs from UV-light illumination.

We also discussed the effects of UV-light illumination on OTFTs. Through the analysis of atomic force microscopy (AFM), x-ray diffraction spectrum (XRD) and

electron Spectroscopy for Chemical Analysis (ESCA), we found the changes in both chemical properties and surface morphologies were significantly. The oxidation signal and destroyed pentacene grains were significantly appeared on the surface of pentacene film and seemed to be a dominated factor that influenced the OTFTs performance. Based on these experiment results, it may be supposed that the performance degradation was strongly related to changes in chemical bonding and grain morphology, but rather than changes inside the thin-film bulk.

References

[1] A. Tsumura, K. Koezuka, and T. Ando, “Macromolecular electronic devices:

Field-effect transistor with a polythiophene thin film”, Appl. Phys. Lett. Vol.49, pp.1210 (1986).

[2] J. H. Burroughes, C. A. Jones, and R. H. Friend, “Polymer diodes and transistors:

new semiconductor device physics”, Nature, Vol. 335, pp.137 (1988)

[3] Kazuhito Tsukagoshi, Jun Tanabe, Iwao Yagi, Kunji Shigeto, and Keiichi Yanagisawa, “ Organic light-emitting diode driven by organic thin film transistor on plastic substrates”, J.Apply. Phys .Vol 99, pp.064506 (2006)

[4] Alejandro L. Briseno, Qian Miao, Mang Mang Ling, Colin Reese, Hong Meng, Zhenan Bao,and Fred Wudl, “ Hexathiapentacene: Structure, Molecular Packing, and Thin-Film Transistors ”, J. Am. Chem. Soc. Vol.128, pp.15576 (2006)

[5] R. Rotzoll, S. Mohapatra, V. Olariu, R. Wenz, M. Grigas, K. Dimmler,O. Shchekin, and A. Dodabalapur, “ Radio frequency rectifiers based on organic thin-film transistors ”,Appl. Phys. Lett. Vol.88 , pp.123502 (2006)

[6] Michael C. Hamilton, Sandrine Martin, and Jerzy Kanicki, “Thin-film organic polymer phototransistors”, IEEE Trans. Electron Devices.Vol 51, pp.877 (2004) [7].Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, “Pentacene organic

thin-film transistors-molecular ordering and mobility ”, IEEE Electron Device Lett. Vol. 18, pp. 87 (1997).

[8] C. R. Kagan, A. Afzali, and T. O. Graham, “Operational and environmental stability of pentacene thin-film transistors ”, Appl. Phys. Lett. Vol.86, pp.193505 (2005).

[9] D. K. Hwang, J. H. Park, J. Lee, J.-M. Choi, J. H. Kim, E. Kim, and S. Im,

“Improving resistance to Gate Bias Stress in Pentacene TFTs with Optimally Cured Polymer Dielectric Layers ”,,J. Electrochem. Soc. Vol. 153, G23 ( 2006 ) [10]W. J. Kim, W. H. Koo, S. J. Jo, C. S. Kim, H. K. Baik, D. K. Hwang, K.

Lee, J. H. Kim, and S. Im, “Ultraviolet-Enduring Performance of Flexible Pentacene TFTswith SnO2 Encapsulation Films” , Electrochem. Solid-State .Lett.

Vol 9, pp.G251 (2006).

[11] Jeong-M. Choi, D. K. Hwang, Jung Min Hwang, Jae Hoon Kim, and Seongil Im,

“Ultraviolet-enhanced device properties in pentacene-based thin-film transistors ” ,Appl. Phys. Lett. , Vol. 90, pp.113515 (2007)

[12] A. Vollmer *, H. Weiss, S. Rentenberger, I. Salzmann, J.P. Rabe, N. Koch “The interaction of oxygen and ozone with pentacene ”, Surface Science , Vol.600 ,pp.

4004–4007. (2006)

[13].A. Maliakal, K. Raghavachari, H. Katz, E. Chandross, and T. Siegrist,

“Photochemical Stability of Pentacene and a Substituted Pentacene in Solution and in Thin Films”, Chem.Mater.,Vol. 16,pp. 4980 (2005).

[14].K. A. M. dos Santos, P. A. Z. Suarez, and J. C. Rubim, “Photo-degradation of synthetic and natural polyisoprenes at specific UV radiations”, Polym Degrad.

Stab.,Vol.90,pp.34 (2005).

[15]. H. Heil, G. Andress, R. Schmechel, H. Von Seggern, J. Steiger, K. Bonard, and R.Sprengard ,“Sunlight stability of organic light-emitting diodes ”, J. Appl. Phys., Vol.97, pp.124501 (2005).

[16]AndrewA.Lacis“A parameterization for the absorption of solar radiation in the earth atmosphere ” ,Journal of the atmospheric sciences,Vo31,pp.118(1973) [17] Yanming Sun , Yunqi Liu , and Daoben Zhu, “Advances in organic field effect

transistors” ,J.Mater.Chem.,Vol.15,pp.53(2005)

[18] R.A.Street,D.Knipp, and A.R.Volkel, “Hoke transport in polycrystalline pentacene transistors” ,Appl. Phys. Lett. , Vol. 80, pp.1658 (2002)

[19] G. Horowitz, “Organic field-effect transistors”, Adv. Mater., Vol. 10, pp. 365, (1998).

[20] Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, “Stacked pentacene layer organic thin-film transistors with improved characteristics”, IEEE Electron Device Lett, Vol. 18, pp 606, (2000).

[21]S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, and T. N. Jackson,

“Temperature-independent transport in high-mobility pentacene transistors”, Appl.

Phys. Lett., Vol. 72, pp. 1854, (1998).

[22] W. Warta, and N. Karl, “Hot holes in naphthalene: High, electric-field-dependent mobilities”, Phys. Rev. B, Vol. 32, pp. 1172, (1985).

[23] L. B. Schein, C. B. Duke, and A. R. McGhie, “Observation of the Band-Hopping Transition for Electrons in Naphthalene”, Phys. Rev. Lett., Vol 40, pp. 197, (1978).

[24] E. A. Silinsh, A. Klimkans, S. Larsson, and V. Cápek, “Molecular polaron states in polyacene crystals Formation and transfer processes”, Chem. Phys., Vol 198, pp. 311 (1995).

[25] O. Ostroverkhova, D. G. Cooke, S. Shcherbyna, R. F. Egerton, F. A. Hegmann, R.R. Tykwinski, and J. E. Anthony, “Bandlike transport in pentacene and

Functionalized pentacene thin films revealed by subpicosecond transient photoconductivity measurements”, Phys. Rev. B, Vol. 71, pp. 035204, (2005).

[26] C. D. Dimitrakopoulos, D. J. Mascaro, “Organic thin-film transistors:A review of recent advances”, IBM J. RES. & DEV., Vol. 45, , pp. 11-26, (2001)

[27] Jung Hun Lee, Gi Heon Kim, Seong Hyun Kim, Sang Chul Lim, Yong Suk Yang, Jiyoung Oh, Ji Ho Youk, Jin Jang, Taehyoung Zyung “The novel encapsulation

method for organic thin-film transistors”, Current Applied Physics ,Vol 5 , pp.

348–350 (2005)

[28] D. Li, E. J. Borkent, R. Nortrup, H. S. Moon, H. Katz, and Z. Bao, “Humidity effect on electrical performance of organic thin-film transistors” Appl.Phys. Lett.

Vol.86, pp.042105 (2005).

[29]Y. Qiu, Y. Hu, G. Dong, L. Wang, J. Xie, and Y. Ma, “H2O effect on the stability of organic thin-film field-effect transistors”Appl. Phys. Lett. Vol.83, pp.1644 (2003).

[30]R. Ye, M. Baba, K. Suzuki, Y. Ohishi, and K. Mori, “Effects of O2 and H2O on electrical characteristics of pentacene thin film transistors” Thin Solid Films Vol.464,pp.437 (2004).

[31]O. D. Jurchescu, J. Baas, and T. T. M. Palstra, “Electronic transport properties of pentacene single crystals upon exposure to air”Appl. Phys. Lett.Vol. 87,

pp.052102 (2005).

[32]O. D. Jurchescu, J. Baas, and T. T. M. Palstra, “Effect of impurities on the mobility of single crystal pentacene”Appl. Phys. Lett. Vol.84, pp.3061(2004).

[33]Woo Jin KIM, Won Hoe KOO, “Encapsulation of Organic Field-Effect Transistors with Highly Polarizable Transparent Amorphous Oxide ”, J.J.Apply.

Phys .vol 44, pp.L1174 (2005)

[34]A. G. Erlat, B. M. Henry, J. J. Ingram, D. B. Mountain, A. McGuigan,

R. P. Howson, C. R. M. Grovenor, G. A. D. Briggs, and Y. Tsukahara,

“Characterisation of aluminium oxynitride gas barrier films”

Thin Solid Films Vol.388,pp. 78 (2001).

[35] Han-Ki Kim,“High-quality thin-film passivation by catalyzer-enhanced chemical vapor deposition for organic light-emitting diodes”, Appl. Phys. Lett. Vol.90, pp.013502 (2007)

[36] Flora M. Li, Yuri Vygranenko, Sarswati Koul, and Arokia“Photolithographically defined polythiophene organic thin-film transistors”, J. Vac. Sci. Technol. Vol 24 pp.3(2006)

[37]Tsuyoshi SEKITANI and Takao SOMEYA,“Air-Stable Operation of Organic Field-Effect Transistors on Plastic Films UsingOrganic/Metallic Hybrid Passivation Layers ”, J.J.Apply. Phys .Vol 46, pp.4300 (2007)

[38] Seung Hoon Han, Jun Hee Kim,“Solvent Effect of the Passivation Layer on Performance of an Organic Thin-Film Transistor”, Electrochemical and Solid-State Letters, Vol.10, pp.J68-J70(2007)

[39] Seung Hoon Han, Jun Hee Kim, and Jin Janga, “Lifetime of organic thin-film transistors with organic passivation layers”, Appl. Phys. Lett. Vol.88, pp.073519 (2006)

[40] Mang-mang Ling and Zhenan Bao, “Transistor performance of top rough surface of pentacene measured by laminated double insulated-gate supported on a poly(dimethylsiloxanes) base structure”, Appl. Phys. Lett. Vol.88, pp.033502 (2006)

[41] Christopher R. Newman, Reid“High mobility top gated pentacene thin film transistors”, J.Apply. Phys .vol 98, pp.084506 (2005)

[42] Tsuyoshi Sekitani, Shingo Iba, “Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effects”, Appl.

Phys. Lett. Vol.87, pp.073505(2005)

[43] Ioannis Kymissis, Christos D. Dimitrakopoulos, “Patterning pentacene organic thin film transistors”, J. Vac. Sci. Technol. B Vol.20.pp.3(2002)

[44]Woo Jin Kim, Won Hoe Koo, Sung Jin Jo, Chang Su Kim, and Hong Koo Baik ,

“Passivation effects on the stability of pentacene thin-film transistors with SnO2 prepared by ion-beam-assisted deposition ”, J. Vac. Sci. Technol. B Vol.23.pp.6(2002)

[45] V. Bulovi, P. Tian, P. E. Burrows, M. R. Gokhale, and S. R. Forrest“A surface-emitting vacuum-deposited organic light emitting device”, Appl. Phys.

Lett., Vol. 70, pp. 2954, (1997).

[46] L. S. Hung, C. W. Tang, M. G. Mason, P. Raychaudhuri, and J.

Madathil“Application of an ultrathin LiF/Al bilayer in organic surface-emitting diodes”, Appl. Phys. Lett., Vol. 78, pp. 544, (2001).

[47] Horng-Long Cheng, Yu-Shen Mai, Wei-Yang Chou, and Li-Ren Chang,

“Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors”, Appl. Phys. Lett., Vol. 90, pp.

171926, (2007).

[48] Y. Hosoi, K. Okamura, Y. Kimura, H. Ishii, M. Niwano, “ Infrared spectroscopy of pentacene thin film on SiO2 surface”, Appl. Surf. Sci.Vol.244,pp. 607 (2005).

[49] S. Li,1 E. T. Kang, Z. H. Ma and K. L. Tan, “XPS investigation of electrode/polymer interfaces of relevance to the phenylene vinylene

polymer-based LEDs ”,Surf. Interface Anal. Vol 29, pp.95 (2000)

[50] Gilles Horowitz , “Organic thin film transistors: From theory to real devices”, J.

Mater. Res., Vol. 19, pp. 1946 (2004)

[51] Y. Yuan, D. Grozea, S. Han, and Z. H. Lu, “Interaction between organic semiconductors and LiF dopant”, Appl. Phys. Lett. Vol.85, pp.4959 (2005).

簡歷

相關文件