Chapter 5 Conclusion
5.2 Negative Illumination Bias Stress Effect
Negative bias stress with 653 nm wavelength of light for α-IGZO TFT could generate deep donor-like interface traps, which would result in the C-V transfer curve stretch-out. However, these donor-like traps disappeared under negative bias stress with 500 nm wavelength of light. We consider that these donor-like traps may be
72
screened by holes accumulating at the dielectric/channel interface through illumination by short wavelength of light and results in a huge negative threshold voltage shift without C-V transfer curve stretch-out.
73
Reference
Chapter 1 Introduction
[1.1] Toshio Kamiya and Hideo Hosono. “Material characteristics and applications of transparent amorphous oxide semiconductors”, NPG ASIA MATERIAL, Vol. 2, 15-22, 2010
[1.2] Min-Chen Chen, Ting-Chang Chang, Chih-Tsung Tsai, Sheng-Yao Huang, Shih-Ching Chen, Chih-Wei Hu, Simon M. Sze, and Ming-Jinn Tsai.
“Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films”, APPLIED PHYSICS LETTERS, Vol. 96, 262110, 2010
[1.3] Toshio Kamiya, Kenji Nomura, and Hideo Hosono, “Present status of amorphous In–Ga–Zn–O thin-film transistors”, SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, Vol. 11, 044305, 2010
Chapter 2 Motivation
[2.1] Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono. “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, NATURE, Vol. 432, 488, 2004
[2.2] Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi, Hirotaka Yamaguchi, and Setsuo Kaneko. “Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors”, JAPANESE JOURNAL OF APPLIED
74
PHYSICS, Vol. 48, 010203, 2009
[2.3] Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Toshio Kamiya, and Hideo Hosono. “Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay”, ELECTROCHEMICAL AND SOLID-STATE LETTERS, Vol. 13, H324-H327, 2010
[2.4] Byungki Ryu, Hyeon-Kyun Noh, Eun-Ae Choi, and K. J. Chang.
“O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 97, 022108, 2010
[2.5] Khashayar Ghaffarzadeh, Arokia Nathan, John Robertson, Sangwook Kim, Sanghun Jeon, Changjung Kim, U-In Chung, and Je-Hun Lee. “Persistent photoconductivity in Hf–In–Zn–O thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 97, 143510, 2010
[2.6] R. Laiho, L. S. Vlasenko, and M. P. Vlasenko. “Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO”, JOURNAL OF APPLIED PHYSICS, Vol. 103, 123709, 2008
[2.7] Md Delwar Hossain Chowdhury, Piero Migliorato, and Jin Jang. “Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors”, APPLIED PHYSICS LETTERS, Vol. 97, 173506, 2010
[2.8] Shahnewaz Mondal, and A. K. Raychaudhuri. “Observation of a large gate-controlled persistent photoconduction in single crystal ZnO at room temperature”, APPLIED PHYSICS LETTERS, Vol. 98, 023501, 2011 [2.9] Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Wan-Joo Maeng,
Hyun-Suk Kim, Myungkwan Ryu, and Sang Yoon Lee. “The effect of UV-assisted cleaning on the performance and stability of amorphous oxide
75
semiconductor thin-film transistors under illumination”, APPLIED PHYSICS LETTERS, Vol. 98, 012107, 2011
[2.10] M. J. Powell, C. van Berkel, D. French, and D. H. Nicholls. “Bias dependence of instability mechanisms in amorphous silicon thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 51, 1242, 1987
[2.11] M. J. Powell, C. van Berkel, and J. R. Hughes. “Time and temperature dependence of instability mechanisms in amorphous silicon thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 54, 1323, 1989
[2.12] A. v. Gelatos and J. Kanicki. “Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the
“carrier-induced defect creation” mode correct ?”, APPLIED PHYSICS LETTERS, Vol. 57, 1197, 1990
[2.13] F. R. Libsch and J. Kanicki. “Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors”, APPLIED PHYSICS LETTERS, Vol. 62, 1286, 1993
[2.14] Karim S. Karim, Arokia Nathan, Michael Hack, and William I. Milne.
“Drain-Bias Dependence of Threshold Voltage Stability of Amorphous Silicon TFTs”, IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 4, 188, 2004
[2.15] Chia-Sheng Lin, Ying-Chung Chen, Ting-Chang Chang, Hung-Wei Li, Shih-Ching Chen, Wei-Che Hsu, Fu-Yen Jian, Te-Chih Chen, and Ya-Hsiang Tai. “Transient Effect Assisted NBTI Degradation in p-Channel LTPS TFTs under Dynamic Stress”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 158, H10-H14, 2011
[2.16] R. B. M. Cross and M. M. De Souza. “Investigating the stability of zinc oxide thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 89,
76
263513, 2006
[2.17] Yuriy Vygranenko, Portugal, and Kai Wang. “Stable indium oxide thin-film transistors with fast threshold voltage recovery”, APPLIED PHYSICS LETTERS, Vol. 91, 263508, 2007
[2.18] A. Suresh and J. F. Muth. “Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 92, 033502, 2008
[2.19] Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, and Hideo Hosono. “Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O,observed by bulk sensitive x-ray photoelectron spectroscopy”, APPLIED PHYSICS LETTERS, Vol. 92, 202117, 2008
[2.20] Tze-Ching Fung, Student Member, IEEE, Katsumi Abe, Hideya Kumomi, and Jerzy Kanicki. “Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors”, JOURNAL OF DISPLAY TECHNOLOGY, Vol. 5, NO. 12, 452, 2009
[2.21] Kenji Nomura, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono.
“Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors”, APPLIED PHYSICS LETTERS, Vol. 95, 013502, 2009
[2.22] Q. H. Li, Q. Wan, Y. X. Liang, and T. H. Wang. “Electronic transport through individual ZnO nanowires”, APPLIED PHYSICS LETTERS, Vol.
84, 4556, 2004
[2.23] Zhiyong Fan, Dawei Wang, Pai-Chun Chang, Wei-Yu Tseng, and Jia G. Lu.
“ZnO nanowire field-effect transistor and oxygen sensing property”, APPLIED PHYSICS LETTERS, Vol. 85, 5923, 2004
77
[2.24] P. P. SAHAY. “Zinc oxide thin film gas sensor for detection of acetone”, JOURNAL OF MATERIALS SCIENCE, Vol. 40, 4383, 2005
[2.25] K. H. Zheng, Y. C. Zhao, K. Deng, Z. Liu, L. F. Sun, Z. X. Zhang, L. Song, H. F. Yang, C. Z. Gu, and S. S. Xie. “Effectively enhanced oxygen sensitivity of individual ZnO tetrapod sensor by water preadsorption”, APPLIED PHYSICS LETTERS, Vol. 92, 213116, 2008
[2.26] Yong-Hoon Kim, Hyun Soo Kim, Jeong-In Han, and Sung Kyu Park.
“Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors”, APPLIED PHYSICS LETTERS, Vol. 97, 092105, 2010
[2.27] Donghun Kang, Hyuck Lim, Changjung Kim, Ihun Song, Jaechoel Park, Youngsoo Park, and JaeGwan Chung. “Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules”, APPLIED PHYSICS LETTERS, Vol. 90, 192101, 2007
[2.28] Jae Kyeong Jeong, Hui Won Yang, Jong Han Jeong, Yeon-Gon Mo, and Hye Dong Kim. “Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 93, 123508, 2008
[2.29] Jin-Seong Park, Jae Kyeong Jeong, Hyun-Joong Chung, Yeon-Gon Mo, and Hye Dong Kim. “Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water”, APPLIED PHYSICS LETTERS, Vol. 92, 072104, 2008
[2.30] Yong-Hoon Kim, Hyun Soo Kim, Jeong-In Han, and Sung Kyu Park.
“Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors”, APPLIED PHYSICS LETTERS, Vol. 97, 092105, 2010
78
[2.31] Jaechul Park, Sangwook Kim, Changjung Kim, Sunil Kim, Ihun Song, Huaxiang Yin, Kyoung-Kok Kim, Sunghoon Lee, Kiha Hong, Jaecheol Lee, Jaekwan Jung, Eunha Lee, Kee-Won Kwon, and Youngsoo Park.
“High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation”, APPLIED PHYSICS LETTERS, Vol. 93, 053505, 2008
[2.32] Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono. “Amorphous In–Ga–
Zn–O coplanar homojunction thin-film transistor”, APPLIED PHYSICS LETTERS, Vol. 94, 133502, 2009
[2.33] Jae Kyeong Jeong, Shinhyuk Yang, Doo-Hee Cho, Sang-Hee Ko Park, Chi-Sun Hwang, and Kyoung Ik Cho. “Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors”, APPLIED PHYSICS LETTERS, Vol. 95, 123505, 2009
[2.34] Hyun-Sik Seo, Jong-Uk Bae, Dae-Hwan Kim, YuJin Park, Chang-Dong Kim, In Byeong Kang, In-Jae Chung, Ji-Hyuk Choi, and Jae-Min Myoung.
“Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO x Passivation Layer”, ELECTROCHEMICAL AND SOLID-STATE LETTERS, Vol. 12, H348-H351, 2009
Chapter 4 Result & Discuss
[4.1] Tze-Ching Fung, Student Member, IEEE, Katsumi Abe, Hideya Kumomi, and Jerzy Kanicki. “Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors”, JOURNAL OF DISPLAY TECHNOLOGY, Vol. 5, NO. 12, 452, 2009
79
[4.2] A. Rolland, J. Richard, J.-P. Kleider, and D. Mencaraglia. “Electrical properties of amorphous silicon transistors and mis-devices: Comparative study of top nitride and bottom nitride configurations”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 140, 3679, 1993.
[4.3] Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Wan-Joo Maeng, Hyun-Suk Kim, Myungkwan Ryu, and Sang Yoon Lee. “The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination”, APPLIED PHYSICS LETTERS, Vol. 98, 012107, 2011
[4.4] Mutsumi Kimura, Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, and Hideo Hosono. “Trap densities in amorphous-InGaZnO4 thin-film transistors”, APPLIED PHYSICS LETTERS, Vol. 92, 133512, 2008
[4.5] Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, and Hideo Hosono. “Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy”, APPLIED PHYSICS LETTERS, Vol. 92, 202117, 2008
[4.6] http://www.epson.jp/e/products/device/htps/tech/tech8.htm
[4.7] Kenji Nomura, Hiromichi Ohta, Akihiro Takagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono. “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, NATURE, Vol. 432, 488, 2004
[4.8] Toshio Kamiya, Kenji Nomura, and Hideo Hosono. “Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping”, JOURNAL OF DISPLAY TECHNOLOGY, Vol. 5, 468, 2009
80
[4.9] Himchan Oh, Sung-Min Yoon, Min Ki Ryu, Chi-Sun Hwang, Shinhyuk Yang, and Sang-Hee Ko Park. “Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor”, APPLIED PHYSICS LETTERS, Vol. 97, 183502, 2010
81
Resume
姓名：李岳恆 (Iue-Hen Li)
出生日期：民國七十六年六月一日
住址：807 高雄市三民區澄和路 142 號
學歷：
國立中山大學 物理學系 學士 (2005.09~2009.01) 國立交通大學 電子研究所 碩士 (2009.09~2011.06)
論文題目：
銦鎵摻雜之非晶態氧化鋅薄膜電晶體在環境與照光偏壓下穩定 度之研究
Study of Environment Effects and Bias Illumination Stability for Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors