t
vp= t
vbt
r= t
f= 100ns
t
vbt
vbt
vpf = 5Hz Duty-cycle = 50%
f = 200Hz Duty-cycle = 50%
VD = -6 V L = 600 µm
Gate Voltage ( V ) (c)
-70 -60 -50 -40 -30 -20 -10 0 10 20
Drain Current ( A )
10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4
t = 0 s t = 100 s t = 500 s t = 1000 s
Fig. 3.27 Evolution ID-VG characteristic of pentacene-based TFTs deposited on thermal oxide during ON region AC bias-stress with a duty-cycle of 50% and
frequency of (a) 5 Hz (b) 50Hz (c) 200Hz
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-3
Fig. 3.28 Threshold voltage shift versus effective stress time induced by ON region AC bias-stress with different frequencies.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Fig. 3.29 Mobility variation versus effective stress time
f = 5Hz Duty-cycle = 50%
f = 200Hz Duty-cycle = 50%
VD = -6 V L = 600 µm
Gate Voltage ( V ) (c)
-70 -60 -50 -40 -30 -20 -10 0 10 20
Drain Current ( A )
10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4
t = 0 s t = 100 s t = 500 s t = 1000 s
Fig. 3.30 Evolution ID-VG characteristic of pentacene-based TFTs deposited on thermal oxide during OFF region AC bias-stress with a duty-cycle of 50% and
frequency of (a) 5 Hz (b) 50Hz (c) 200Hz.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
0
Fig. 3.31 Threshold voltage shift versus effective stress time induced by OFF region AC bias-stress with different frequencies.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Fig. 3.32 Mobility variation versus effective stress time.
f = 50Hz Duty-cycle = 25%
Fig. 3.33 Evolution ID-VG characteristic of pentacene-based TFTs deposited on thermal oxide during (a) ON region (b) OFF region AC bias-stress with a duty-cycle
of 25% and frequency of 50Hz.
VD = -6 V f = 50 Hz
Effective Stress Time ( S )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-3
Fig. 3.34 Threshold voltage shift versus effective stress time induced by ON region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective stress Time ( s )
0 200 400 600 800 1000
Mobility Variation µstress/µinitial
0.5
Fig. 3.35 Mobility variation versus effective stress time.
VD = -6 V f = 50Hz
Effective Stress Time ( S )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
0
Fig. 3.36 Threshold voltage shift versus effective stress time induced by OFF region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective stress Time ( s )
0 200 400 600 800 1000
Fig. 3.37 Mobility variation versus effective stress time induced by OFF region AC bias-stress with different duty-cycles.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-15
Fig. 3.38 Threshold voltage shift versus effective stress time induced by ON region and OFF region AC bias-stress with different frequencies.
VD = -6 V f = 50Hz
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-15
Fig. 3.39 Threshold voltage shift versus effective stress time induced by ON region and OFF region AC bias-stress with different duty-cycles.
f = 50Hz Duty-cycle = 50%
Fig. 3.40 Evolution ID-VG characteristic of pentacene-based TFTs deposited on HMDS surface treatment during ON region AC bias-stress with a duty-cycle of 50% and
frequency of (a) 50Hz (b) 200Hz.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-12
Fig. 3.41 Threshold voltage shift versus effective stress time induced by ON region AC bias-stress with different frequencies.
VD = -6 V D.R = 50%
Effective stress Time ( s )
0 200 400 600 800 1000
Fig. 3.42 Mobility variation versus effective stress time induced by ON region AC bias-stress with different frequencies.
f = 50Hz Duty-cycle = 50%
Fig. 3.43 Evolution ID-VG characteristic of pentacene-based TFTs deposited on HMDS surface treatment during OFF region AC bias-stress with a duty-cycle of 50%
and frequency of (a) 50Hz (b) 200Hz.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-12
Fig. 3.44 Threshold voltage shift versus effective stress time induced by OFF region AC bias-stress with different frequencies.
VD = -6 V D.R = 50%
Effective stress Time ( s )
0 200 400 600 800 1000
Mobility Variation µstress/µinitial
0.5
Fig. 3.45 Mobility variation versus effective stress time induced by OFF region AC bias-stress with different frequencies.
f = 50Hz Duty-cycle = 25%
Fig. 3.46 Evolution ID-VG characteristic of pentacene-based TFTs deposited on HMDS during (a) ON region (b) OFF region AC bias-stress with a duty-cycle of 25%
and frequency of 50Hz.
VD = -6 V f = 50 Hz
Effective Stress Time ( S )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-12
Fig. 3.47 Threshold voltage shift versus effective stress time induced by ON region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective stress Time ( s )
0 200 400 600 800 1000
Fig. 3.48 Mobility variation versus effective stress time induced by ON region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective Stress Time ( S )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
0
Fig. 3.49 Threshold voltage shift versus effective stress time induced by OFF region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective stress Time ( s )
0 200 400 600 800 1000
Fig. 3.50 Mobility variation versus effective stress time induced by OFF region AC bias-stress with different duty-cycles.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000 1200
Threshold Voltage shift ( V )
-15
Fig. 3.51 Threshold voltage shift versus effective stress time induced by ON region and OFF region AC bias-stress with different frequencies.
VD = -6 V f = 50Hz
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-15
Fig. 3.52 Threshold voltage shift versus effective stress time induced by ON region and OFF region AC bias-stress with different duty-cycles.
f = 5Hz Duty-cycle = 50%
f = 200Hz Duty-cycle = 50%
VD = -6 V L = 600 µm
Gate Voltage ( V ) (c)
-70 -60 -50 -40 -30 -20 -10 0 10 20
Drain Current ( A )
10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4
t = 0 s t = 100 s t = 500 s t = 1000 s
Fig. 3.53 Evolution ID-VG characteristic of pentacene-based TFTs deposited on ODMS surface treatment during ON region AC bias-stress with a duty-cycle of 50%
and frequency of (a) 5Hz (b) 50Hz (c) 200Hz.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-12
Fig. 3.54 Threshold voltage shift versus effective stress time induced by ON region AC bias-stress with different frequencies.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Fig. 3.55 Mobility variation versus effective stress time induced by ON region AC bias-stress with different frequencies.
f = 5Hz Duty-cycle = 50%
f = 200Hz Duty-cycle = 50%
VD = -6 V L = 600 µm
Gate Voltage ( V ) (c)
-70 -60 -50 -40 -30 -20 -10 0 10 20
Drain Current ( A )
10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4
t = 0 s t = 100 s t = 500 s t = 1000 s
Fig. 3.56 Evolution ID-VG characteristic of pentacene-based TFTs deposited on ODMS surface treatment during OFF region AC bias-stress with a duty-cycle of 50% and
frequency of (a) 5Hz (b) 50Hz (c) 200Hz.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
0
Fig. 3.57 Threshold voltage shift versus effective stress time induced by OFF region AC bias-stress with different frequencies.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Fig. 3.58 Mobility variation versus effective stress time induced by OFF region AC bias-stress with different frequencies.
f = 50Hz Duty-cycle = 25%
Fig. 3.59 Evolution ID-VG characteristic of pentacene-based TFTs deposited on ODMS treatment during (a) ON region (b) OFF region AC bias-stress with a
duty-cycle of 25% and frequency of 50Hz.
VD = -6 V f = 50 Hz
Effective Stress Time ( S )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-12
Fig. 3.60 Threshold voltage shift versus effective stress time induced by ON region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective stress Time ( s )
0 200 400 600 800 1000
Fig. 3.61 Mobility variation versus effective stress time induced by ON region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective Stress Time ( S )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
0
Fig. 3.62 Threshold voltage shift versus effective stress time induced by OFF region AC bias-stress with different duty-cycles.
VD = -6 V f = 50Hz
Effective stress Time ( s )
0 200 400 600 800 1000
Fig. 3.63 Mobility variation versus effective stress time induced by OFF region AC bias-stress with different duty-cycles.
VD = -6 V D.R = 50%
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-15
Fig. 3.64 Threshold voltage shift versus effective stress time induced by ON region and OFF region AC bias-stress with different frequencies.
VD = -6 V f = 50Hz
Effective Stress Time ( s )
0 200 400 600 800 1000
Threshold Voltage Shift ( V )
-15
Fig. 3.65 Threshold voltage shift versus effective stress time induced by ON region and OFF region AC bias-stress with different duty-cycles.