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Table I
Full width at half maximum (FWHM) and binding energy (BE) of the N-1s XPS peak for plasma-deposited silicon oxynitride films after various process steps during formation and after annealing at 950 ºC in N2O.
Pr ocess
FWHM
(eV)
BE
(eV)
NO at 780 ºC for 6 min 1.46 398.3
N2 plasma at 300 ºC for 5 s 2.11 398.6
anneal at 950ºC in N2 for 30 s 1.60 398.6
15 s in N2O 1.58 398.7
20 s in N2O 1.57 398.8
30 s in N2O 1.57 398.8
60 s in N2O 1.57 398.8
10
-1210
-1010
-810
-610
-410
-2-1.0 -0.6 -0.2 0.2 0.6 1.0 Gate bias (V)
| Drain current (Amp) |
Vb=0V Vb=Vg
nMOS pMOS
Fig.1.1 Subthreshold characteristics of nMOSFET's and pMOSFET's, operating in DTMOS and standard MOS regimes. |Vds|=0.1V. Higher Ion/Ioff ratio can be obtained in DTMOS operation mode.