With the development of multiband communication system, the reconfigurable components will be attractive to reduce the size and complexity of RF frond-end module. The reconfigurable filters have been designed in this dissertation, applicable in receiver part of RF frond-end module. In transceiver part, the duplexers will be used.
Based on the design concept, the reconfigurable duplexers can be designed by two reconfigurable filters and tunable feeding structures or tunable matching circuits. The design concept can also be extended to design multiplexers. The main challenge will be the tunable feeding structures or tunable matching circuits.
Besides, the filters using acoustic wave resonators are widely used in recent years.
For general SAW/FBAR filters design, the resonance and anti-resonance frequencies of SAW/FBAR resonators are used to design the transmission zero of filters. The design parameters of SAW/FBAR filter include numbers of SAW/FBAR resonators, parallel or series connection, position of resonators, and the resonance and anti-resonance
frequencies of SAW/FBAR resonators. By using the method of electromagnetic wave to analyze the relation between filter response and those parameters, the design procedure may be build. Then using the artificial intelligence (AI), the optimal design parameters of filter may be found. The main challenge is finding the relation between filter response and design parameters.
Table 6.2 Comparison of literatures on SAW/FBAR reconfigurable filters
fc (GHz) Type of
tunable filter BW/FBW Tuning
range
Resonators Tunable comp.
Type Num. kt
Digital capacitors 9
Ch. 5 1.91~2.12
APPENDIX
A. Derivation to input impedance of layered FBARs
From (4.10) and (4.13), the stress T and the displacement of particle u are u
For layered FBARs, which shown in Fig. 4.1 (b), the second-order ordinary differential equation of T can be written as
The boundary conditions are
(1) T = 0 at t
From the differential equation (A.1), the T can be written as
D solution, the T is even symmetric with respect to z = 0 and can be rewritten as
Using the boundary condition (2) and (3), the simultaneous equations are
Hence, the displacement of particle u, strain S, and the electric field E are
(a) (b)
(c) (d)
Fig. A.1 The distribution versus the vertical height (z) of FBARs. (a) Stress (T/D), (b) Displacement of particle (u/D), (c) Strain (S/D), and (d) Electric field (E/D)
-0.72 -0.45 0 0.45 0.72
z ( m) 0
1 2 3 4 5 6 7 8 9
Stress (T/D)
1015Al-PZT4-Al; d
p=0.9 m; d
t=0.27 m
Piezoelectric Layer (PZT-4) Electrode (Al)
Displacement of article (u/D)Electric filed (E/D)
B. Derivation to input impedance of Tunable FBARs
For layered FBARs, which shown in Fig. 5.1 (b), the second-order ordinary differential equation of T can be written as
The boundary conditions are (1) T = 0 at z=0 and z = d4
From the differential equations (B.1), the T can be written as
Using the boundary condition (2) and (3), the simultaneous equations are
Since there are six equations, the six variables can be solved. Thence, the displacement of particle u, strain S, and the electric field E can be obtained according as
(a) (b)
(c) (d)
Fig. B.1 The distribution versus the vertical height (z) of TFBARs, which AlN (dp = 2.2 µm) and GaN (dN = 0.1 µm) at 2.1 GHz. (a) Stress (T/D), (b) Displacement of particle
(u/D), (c) Strain (S/D), and (d) Electric field (E/D)
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75
0 1012 Al-AlN-GaN-Al Electrode (Al)
Piezoelectric layer without doping (AlN) Piezoelectric layer with doping (GaN)
dp= 2.2 μm dN= 0.1 μm
5 10-6 Al-AlN-GaN-Al
Electrode (Al)
Piezoelectric layer without doping (AlN) Piezoelectric layer with doping (GaN)
dp= 2.2 μm d
Piezoelectric layer without doping (AlN) Piezoelectric layer with doping (GaN)
dp= 2.2 μm d
10 1010 Al-AlN-GaN-Al
Piezoelectric layer without doping (AlN) Piezoelectric layer with doping (GaN)
dp= 2.2 μm dN= 0.1 μm
(a) (b)
(c) (d)
Fig. B.2 The distribution versus the vertical height (z) of TFBARs, which AlN (dp = 1.9 µm) and GaN (dN = 0.4 µm) at 1.975 GHz. (a) Stress (T/D), (b) Displacement of particle
(u/D), (c) Strain (S/D), and (d) Electric field (E/D)
Stress (T/D)
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 z ( m)
-5 -4 -3 -2 -1 0 1 2 3 4
5 10-6 Al-AlN-GaN-Al
Electrode (Al)
Piezoelectric layer without doping (AlN) Piezoelectric layer with doping (GaN)
dp= 1.9 μm dN= 0.4 μm
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 z ( m)
-4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0
Strain (S/D)
Al-AlN-GaN-Al
Electrode (Al)
Piezoelectric layer without doping (AlN) Piezoelectric layer with doping (GaN)
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PUBLICATION LIST
I. Journal Papers:
[1] H.-Y. Tsai, T.-Y. Huang and R.-B. Wu, "Varactor-tuned compact dual-Mode tunable filter with constant passband characteristics," IEEE Trans. Compon.
Packag. Manuf. Technol., vol. 6, no. 9, pp. 1399-1407, Sep. 2016.
II. Conference Papers:
[1] H.-Y. Tsai, T.-Y. Huang, T.-M. Shen and R.-B. Wu, "Millimeter-wave non-contact flip-chip transitions with Chebyshev filtering response using coupled microstrip resonators," in Proc. Asia-Pacific Microw. Conf., Seoul, Korea, Nov. 2013, pp. 939-941.
[2] H.-Y. Tsai, T.-Y. Huang, and R.-B. Wu, “Design of dual-mode tunable filter with constant fractional bandwidth using varactors,” in Proc. Asia-Pacific Microw. Conf., Sendai, Japan, Nov. 2014, pp. 1312–1314.
[3] Y.-W. Su, T.-Y. Huang, H.-Y. Tsai, Y.-C. Chiu and R.-B. Wu, "Design of 2-in-1 bandpass filter using common dual mode resonators," in Proc. Asia-Pacific Microw. Conf., Nanjing, China, Dec. 2015, pp. 1-3.
[4] C.-Y. Tung, T.-Y. Huang, H.-Y. Tsai, C.-X. Chen and R.-B. Wu, "Design of compact microwave filter using vertically interdigitated resonators," in Proc.
Asia-Pacific Microw. Conf., Nanjing, China, Dec. 2015, pp. 1-3.
[5] M.-H. Kuo, T.-Y. Huang, H.-Y. Tsai, C.-X. Chen and R.-B. Wu, "A miniaturized bandpass filter using double folded dual-mode cavity resonators in LTCC," in Proc. Asia-Pacific Microw. Conf., Nanjing, China, Dec. 2015, pp.
1-3.