Fig. 5.11 shows the layout of the proposed mixer. The size of the layout is 0.95mm by 0.6mm including pads. Considering the layout effect, we take the long layout line and run EM simulation by ADS Momentum so as to obtain the layout effect model.
The mixer is designed using TSMC 0.18μm CMOS technology. The simulations were done at 1.8 V supply voltage and the power consumption is 5 mW including the output buffer.
Fig. 5.11 Layout of the proposed mixer
-20 -15 -10 -5 0 5
-15 -10 -5 0 5 10 15 20
Conversion Gain (dB)
LO Power (dBm) LO power sweep
Fig. 5.12 Conversion Gain VS. LO power
Fig. 5.12 illustrates the conversion gain versus the LO power. Fig. 5.13 illustrates the conversion gain versus the RF frequency with both RF and LO ports swept in frequency from 4 to 7 GHz, a fixed IF frequency of 20 MHz, RF power of -30 dBm, and LO power of 0 dBm. Fig. 5.12 illustrates the conversion gain versus the IF frequency.
4.0 4.5 5.0 5.5 6.0 6.5 7.0
0 2 4 6 8 10 12 14 16
Conversion Gain (dB)
Frequency (GHz)
RF frequency sweep
Fig. 5.13 Conversion Gain VS. RF Frequency
0 20 40 60 80 100 120 140 160 180 200
0 2 4 6 8 10 12 14 16
Conversion Gain (dB)
IF (MHz)
IF sweep
Fig. 5.14 Conversion Gain VS. IF frequency
Fig. 5.15 shows the P1dB and IIP3 when RF frequency is 5.2GHz and fixed IF frequency is 20MHz. P1dB is about -11dBm and IIP3 is about -3.8dBm. Fig. 5.16 shows the P1dB and IIP3 when RF frequency is 5.8GHz and fixed IF frequency is 20MHz. P1dB is about -11dBm and IIP3 is about -3.7dBm.
-30 -25 -20 -15 -10 -5 0 5
IF output power
RF input power Main signal power 3rd order IM power
IIp3:-3.8 dBm P1dB:-11 dBm
Fig. 5.15 P1dB and IIP3 at 5.2GHz
-30 -25 -20 -15 -10 -5 0 5
IF input power
RF input power Main signal power 3rd order IM power
IIp3:-3.7 dBm P1dB:-11 dBm
Fig. 5.16 P1dB and IIP3 at 5.8GHz
The simulated RF return loss is better than 10 dB as shown in Fig. 5.17. The simulated IF return loss are also better than 10dB as shown in Fig. 5.18. Table 5.1 is the summary of mixer simulation results.
2 3 4 5 6 7 8 9
-30 -20 -10 0
Return loss(dB)
Frequency (GHz) RF Return loss
Fig. 5.17 RF Return Loss
0 1 2 3 4 5 6
-20 -15 -10 -5 0
IF Return loss (dB)
Frequency (GHz) IF Return loss
Fig. 5.18 IF Return Loss
Table 5.1 Summary of mixer simulation results
RF Return Loss S11(dB)11.7+ 0.6 Power conversion gain(dB)
1.8
TSMC 0.18um CMOS Process RF Return Loss S11(dB)
11.7+ 0.6 Power conversion gain(dB)
1.8
TSMC 0.18um CMOS Process
Simulation results Parameters
5.4 Comparison and Summary
The comparison of the proposed mixer against recently reported mixer with passive balun is shown in Table 5.2. It indicates that the proposed mixer provides smaller balun size, better linearity, more compact chip size.
Table 5.2 Summary of the comparison
Chip size (mm*mm)0.66*0.25 (at fc=9GHz) [30]
0.26*0.26 (at fc=5.5GHz) Balun size (mm*mm)
This work Chip size (mm*mm)
0.66*0.25 (at fc=9GHz) [30]
0.26*0.26 (at fc=5.5GHz) Balun size (mm*mm)
This work Ref.
Chapter 6 Conclusion
In this thesis, we present bi-directional amplifier, quadrature hybrid, and mixer with the miniaturized balun. These proposed circuits are fabricated using a standard TSMC 0.18μm CMOS process.
In chapter 3, a bi-directional amplifier without any switch or controlled voltage for 5.8GHz applications is presented. The bandwidth of this design is about 250MHz. The bi-directional amplifier contains two identical reflection-type amplifiers and a 3-dB quadrature hybrid. The chip area is 0.96 × 1.15 mm2. The simulation result shows the achieved gain is 11dB , return loss is under -10dB. For the poor experience in the beginning, the result is bad. Experience teaches it. The technology of layout is the key factor in the circuit design. The improved chip will be back in August. Since the lump element of quadrature hybrid cost more area in chapter 3, the miniaturized quadrature hybrid is proposed in chapter 4 to reduce chip size. By employing the active inductors, the area can be reduction and the quality factor can be improved. The size of the layout is 0.74mm by 0.81mm including pads. The measurement S11 is under -10dB and S21 is about -4dB. The measurement S41 is under -15dB and S31 is about -2dB.
The phase difference between S21 and S31 is 94。~100。. The tuning range of this design is from 5GHz to 6GHz.
In chapter 5, an active mixer with miniaturized balun is proposed. The balun structure is consisted of both distributed and lumped elements. By adding two capacitors, the coupled lines length can be reduced and two poles induce because of the coupled resonators. The die size of the proposed balun is about 0.26*0.26 mm2. The size of the total circuit layout is 0.95*0.6 mm2 including pads. The simulation results of proposed mixer achieves power conversion gain of 11.7 ± 0.6 dB, IIP3 of -3.7 dBm, and P-1dB of -11 dBm in the power consumption of 5mW from a 1.8V power supply including the output buffer.
[1] C. W. Pobanz and T. Itoh, “A conformal retrodirective array for radar applications using a heterodyne phased scattering element,” in IEEE MTT-S Int. Microwave
Symposium Digest, vol. 2, pp.905-908, 1995.
[2] E. L. Gruenberg and C. M. Johnson, “Satellite communications relay system using a retrodirective space antenna,” IEEE Trans. on Antennas and Propagation, vol.
12, pp.215-223, Mar. 1964.
[3] S.-J. Chung, T.-C. Chou, andY.-N. Chiu, “A novel card-type transponder designed using retrodirective antenna array,” in IEEE MTT-S Int. Microwave Symposium
Digest, vol. 2, pp.1123-1126, 2001.
[4] C. Cavello, B. Baertlein, and J. Young, “Radar retro-reflective patch for vehicle convoying applications,” in IEEE Intelligent Transportation System Conf. Dig., pp.667-671, 1997.
[5] S.-J. Chung and K. Chang, “A retrodirective microstrip antenna array,”IEEE
Trans. Antennas Propagat., vol. 46, pp. 1802–1809, Dec. 1998.
[6] D. Manstretta, R. Castello, F. Gatta, P. Rossi, and F. Svelto, “A 0.18 um CMOS direct-conversion receiver front-end for UMTS,” in IEEE Int. Solid-State Circuits
Conf. Dig. Tech. Papers, 2002, pp. 240–241.
[7] P. Zhang, T. Nguyen, C. Lan, D. Gambetta, C. Soorapanth, B. Cheng, S. Hart, I.
Sever, T. Bourdi, A. Tham, and B. Razavi, “A direct conversion CMOS transceiver for IEEE 802.11a WLANs,” in IEEE Int. Solid-State Circuits Conf.
Dig. Tech. Papers, 2003, pp. 354–355.
[8] Sining Zhou, and Mau-Chung Frank Chang, “A CMOS Passive Mixer With Low Flicker Noise for Low-Power Direct-Conversion Receiver,” IEEE J. Solid-State
Circuits, vol. 40, no. 5, pp. 1084–1093, MAY 2005.
[9] Sher Jiun Fang; See Taw Lee; Allstot, D.J.; Bellaouar,A.; “A 2 GHz CMOS even harmonic mixer for direct conversion receivers”, ISCAS 2002, vol. 4, 26-29 May 2002, pp. 807-810.
[10] Chung Shyh-Jong, Chen Shing-Ming, and Lee Yang-Chang, “A novel bi-directional amplifier with applications in active van atta retrodirective arrays,”
IEEE Transactions on Microwave Theory and Techniques, Vol. 51, pp.542-547,
Feb 2003.“Design and implementation of micromachined lumped quadrature hybrids,” in
IEEE MTT-S Int. Dig., pp.1285-1288, 2001.
[12] U. Karacaoglu and I.D. Robertson, “MMIC active bandpass filters using varactor-tuned negative resistance elements,” IEEE Transactions on Microwave
Theory and Techniques, Vol. 43, pp.2926-2932, Dec. 1995.
[13] Chun Young-Hoon, Lee Jae-Ryong, Yun Sang-Won, and Rhee Jin-Koo, “Design of an RF low-noise bandpass filter using active capacitance circuit,” IEEE Trans.
on Microwave Theory and Techniques, Vol. 53, pp.687-695, 2005.
[14] J.W. Archer, O. Sevimli, R.A. Batchelor, “Bi-directional amplifiers for half-duplex transceivers,” Gallium Arsenide Integrated Circuit (GaAs IC)
Symposium, 1999. 21st Annual, pp.251-254, 1999.
[15] T. Tsukii, S.G. Houng, and M.J. Schindler, “Wideband bidirectional MMIC amplifiers for new generation T/R module,” IEEE MTT-S Microwave Symposium
Digest, vol.2, pp.907-910, 1990.
[16] J.M. Yang et al. "High performance voltage controlled bidirectional amplifiers in support of component reuse for large aperture phase may," IEEE M77-S Digest, pp.65-6, 2002.
[17] M. Muraguchi, T. Yukitake, and Y. Naito, “Optimum design of 3-dB branch-line couplers using microstrip lines,” IEEE Trans. Microw. Theory Tech., vol. 31, no.
8, pp. 674–678, Aug. 1983.
[18] G. P. Riblet, “A directional coupler with very flat coupling,” IEEE
Trans.Microw. Theory Tech., vol. 26, no. 2, pp. 70–74, Feb. 1978.
[19] C. T. Lin, C. L. Liao, and C. H. Chen, “Finite-ground coplanar-waveguide branch-line couplers,” IEEE Trans. Microw. Wireless Compon. Lett., vol. 11, no.
3, pp. 127–129, Mar. 2001.
[20] S. Banba, T. Hasegawa, and H. Ogawa, “Multilayer MMIC branch-line hybrid using thin dielectric layers,” IEEE Microw. Guided Wave Lett., vol. 1, no. 11, pp.
346–347, Nov. 1991.
[21] Tsung-Nan Kuo, Yo-Shen Lin, Chi-Hsueh Wang, and Chun Hsiung Chen, “A compact LTCC branch-line coupler UsingModified-T equivalent-circuit modelfor transmission line,” IEEE Microw. Guided Wave Lett., vol 16, pp.90-92, FEB.
2006.
[22] J. Kulyk, J. Haslett, “A monolithic CMOS 2368/spl plusmn/30 MHz transformer
Solid-State Circuits, Vol. 41, pp. 362 - 374,2006
[23] K. Allidina and S. Mirabbasi, “A widely tunable active RF filter topology,”
IEEE International Symposium on Circuits and Systems (ISCAS), vol. 21-24, pp.879-882, May 2006.
[24] U. Yodprasit and J. Ngarmnil, “Q-enhancing technique for RF CMOS active inductor,” in Proc. IEEE Int. Symp. Circuits Systems, pp.589–592, 2000.
[25] A. Thanachayanont and A. Payne, “VHF CMOS integrated active inductor,”
Electron. Lett., vol. 32, no. 11, pp. 999–1000, May 1996.
[26] H. K. Chiou, H. H. Lin, and C. Y. Chang, “Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer,” IEEE Microwave
Guided Wave Lett., vol. 7, pp. 248–250, Aug. 1997.
[27] Kian Sen Ang, Yoke Choy Leong, Chee How Lee, “Analysis and Design of Miniaturized Lumped-Distributed Impedance-Transforming Baluns,” IEEE
Transactions on microwave theory and techniques, Vol. 51, No. 3, 2003.
[28] R. Kravchenko, K. Markov, D. Orlenko, G. Sevskiy, and P. Heide, ” Implementation of a miniaturized lumped-distributed balun in balanced filtering for wireless applications,” 2005 European Microwave Conference, Vol. 2, pp.4-6, Oct. 2005.
[29] K. W. Hamed, A. P. Freundorfer, and Y. M. M. Antar, “A monolithic double-balanced direct conversion mixer with an integrated wideband passive balun,” IEEE J. Solid-State Circuits, vol. 40, no. 3, pp.622–629, Mar. 2005.
[30] S.-C. Tseng, C. Meng, C.-H. Chang, C.-K. Wu, and G.-W. Huang, “Monolithic Broadband Gilbert Micromixer With an Integrated Marchand Balun Using Standard Silicon IC Process,” IEEE Trans. on MTT, vol. 54, pp.4362 - 4371, Dec.
2006.
[31] D. M. Pozar, Microwave Engineering, 3rd ed., New York: Wiley, 2005
[32] G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design, 2nd Ed, Prentice, 1996.
[33] B. Razavi, Design of Analog CMOS Integrated Circuits. New York:
McGraw-Hill, 2001.
[34] B. Razavi, RF Microelectronics, Prentice Hall PTR, 1998.
[36] 楊鎮澤,〈射頻 CMOS 主動電感器的研究與應用〉,交通大學電子工程研 究所博士論文,2006 年。
[37] 林竣義,〈主動式電感之設計與實現〉,交通大學電機學院 IC 設計產業研 發碩士論文,2007 年。
[38] 張唐源,〈寬頻混頻器暨 24GHz 鎖相迴路之互補式金氧半導體射頻積體電 路研製〉,交通大學電機學院 IC 設計產業研發碩士論文,2007 年。
[39] 梁清標,〈應用於無線通訊射頻接收機之電路研製〉,元智大學通訊工程研 究所碩士論文,2005 年。