CHAPTER 4 Conclusions
4.2 Suggestions for Future Works
Base on the above results. Several works are worthy to do in the future and are recommended here.
1. The goal of low leakage current and low EOT：
We must by to reduce the defects and suppress the leakage current in LaAlO3 thin film Moreover , we should try to achieve the goal of the low EOT with the low leakage current.
2. To low leakage current and VCC of TLAO MIM by higher work-function metals (Ni, Ir or Pt).
3. To modify the Vfb and Vt of LAO MOS capacitor by using high work-function gates.
4. To use varied interfacial layer (SiO2 or GeO2) to improve the thermal stability on Ge substrate.
5. LAO MOSFET fabrication and related reliability investigation.
45
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