In summary, we investigate that the local strain channel technique using deposition
of SiN layer and stack of a-Si gate structure used in the (111) substrate. The device
performance is improved as the SiN capping layer or a-Si layer is getting thicker.
However, the device with both a-Si layer of gate structure and SiN capping layer
shows only slightly strain effect by different thickness of SiN capping layer. The a-Si
layer as a cover might release the strain effect from the SiN capping layer upon it.
Stack of a-Si gate structure also influences the threshold voltage and sheet resistance
of gate because of its poly depletion width. SiN capping layer causes more interface
states in oxide / Si interface and serious short channel effect. Finally we compare the
strain effect on (100) and (111) substrate. The trends are almost the same except the
structure with both a-Si layer and SiN capping layer. Although there are still some
challenges, the local strain channel technique used in (111) substrate will be useful to
CMOS technology in the future.
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作者簡介
姓名：郭雅欣
性別：女
出生地：台灣省台北縣
生日：中華民國70年3月17日
住址：台北縣中和市員山路151巷2弄16-2號
學歷：台北市立中山女子高級中學
國立交通大學電子物理系
國立交通大學電子物理所碩士班
論文題目：
在(111)晶面基板上利用區域性應力通道提高電子遷移率之 n 型金氧 半場效電晶體
Mobility Enhancement in Local Strained Channel nMOSFETs on (111) Substrate