Summary and future works
A periodic AlGaInAs QW/barrier structure grown on a Fe-doped substrate was used to not only be a saturable absorber for the 1064nm and 1342nm passively Q-switched and mode-locked lasers but also to be a gain medium for the 1360nm and 1570nm optically-pumped semiconductor lasers.
In passively Q-switched lasers, we have demonstrated that the AlGaInAs QWs based SESA is promising candidate to develop high-performance Nd-doped passively Q-switched laser. Compared with InGaAsP, AlGaInAs have larger conduction band offset which can reduce carrier leakage and get higher temperature stability. And the barrier layers play a role not only to confine the carriers but also to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage.
Therefore, in 1.06µm PQS laser , stable Q-switched pulses of 0.9 ns duration with an average output power of 3.5 W and a repetition rate of 110 kHz were obtained at an incident pump power of 13.5 W. The remarkable performance confirms the prospect of using AlGaInAs QWs as saturable absorbers in solid-state lasers.
In passively mode-locked lasers, we have designed AlGaInAs QWs grown on the Fe-doped InP substrate to be a saturable absorber for self-starting continuous-mode-locked Nd:YVO4 laser at 1342 nm. Stable mode-locked pulses of 26.4 ps duration with a repetition rate of 152 MHz were generated within the range of incident pump power from 4.5 W to 12.3 W. The average output power for the cw mode-locked operation was 1.05 W at an incident pump power of 12.3 W.
In optically-pumped semiconductor lasers, we have demonstrated the periodic AlGaInAs QW/barrier structure grown on an Fe-doped InP transparent substrate was
developed to be a gain medium in a room-temperature high-peak-power nanosecond laser at 1.36µm and 1.57µm. The quantum wells are separated by half-wavelength thick AlGaInAs barriers and designed to be located at the antinodes of the intra-cavity standing wave field to enhance the interaction between a standing wave optical field and an active medium. The maximum peak power was achieved 1.2kW and 290 W at 1.36µm and 1.57µm, respectively. For power scaling up, we also have demonstrated an optically pumped high-peak-power AlGaInAs/InP eye-safe laser by in-well pumping scheme. The conversion efficiency is enhanced over three times compared with barrier pumping scheme. Double gain chips were used to increase the absorption efficiency of pump laser and maximum output power and peak power was up to 300mW and 0.52kW. For optically-pumped semiconductor lasers, the performance of AlGaInAs quantum wells grown on InP substrate without DBR has been studied through many ways. We tried to analysis the effect of temperature, pumping spot size, different actively Q-switched frequency (or different duty cycle), different cavity setup (cavity length, output coupler) and improved the performance of AlGaInAs quantum well laser in the room-temperature.
In the future, we will try to deal with the thermal problems of optically-pumped semiconductor laser such that the OPSLs can be operated in the cw-mode. The ways to deal with the heat of OPSLs are substrate removal and bonding a heat-spreader to the semiconductor gain chip. Furthermore, we will also try to develop the 1.2µm and 660 nm (red) optically-pumped semiconductor laser.
In addition to be the saturable absorber and gain medium, many physical phenomena can be observed in semiconductor. Some topics like Rabi oscillation, slow light, PL spectrum, and exciton-polariton in semiconductor microcavity are interesting and important to understand the dynamic of the carrier in the semiconductor.
Reference Reference (Chapter one)
[1]W. Koechner, “Solid-state laser engineering,” 6th ISBN 0-387-29094-x, Springer-Verlag (1996)
[2]J.T. Verdeyen, “Laser Electronics,” 3th ,ISBN:0-13-706666-X. ,Prentice Hall, (2000)
Reference (Chapter Two)
[1] M.Kuzetsov, F. Hakimi, R.Sprague, A. Mooradian,”Design and Characteristics of high-power(>0.5W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 Beams.” IEEE J.Sel. Top. Quanutm Electron, 5, 561, (1999)
[2] M.Kuzetsov, F. Hakimi, R.Sprague, A. Mooradian, “High power(>0.5W CW ) Diode pumped vertical external cavity surface emitting semiconductor laser with circular TEM00 Beam.” IEEE Photonics Tech Lett, 9,1064-1065 (1997)
[3] A.C. Tropper, H.D. Foreman, A.Granache, K.G. Wilcox and S. Hoogland,
“Vertical-external-cavity semiconductor lasers.” J Phys D, 37, 75-85, (2004) [4] U. Keller, A.C. Tropper, “Passively mode-locked surface-emitting semiconductor
lasers.” Phys. report 429 , 67-120 (2006)
[5] A.C. Tropper and Hoogland, “Extended cavity surface-emitting semiconductor lasers.” Prog. Quantum. Electron .30, 1-43, (2006)
[6] M.Y.A. Raja, S.R.J Brueck, M Osinski, CF Schaus et al, “Resonant periodic gain surface-emitting semiconductor lasers”., IEEE J. Quantum Electron. 25, 1500–1512 (1989)
[7] Li Fan, J Hader, M Schillgalies, M Fallahi, .R. Zakharian J.V. Moloney R. Bedford J.T. Murray S.W. Koch W. Stolz, “High-power optically pumped VECSEL using a double-well resonant periodic gain structure.” IEEE Photo.Tech.
Let.17, 1764-1766 , (2005)
[8] A.Bousseksou, S. Bouchoule, M. Kurdi .etc “Fabrication and characterization of 1.55µm single tranverse mode large diameter electrically pumped VECSEL” Opt Quantum Electronic , 38 ,1269-1278(2006)
[9] A. Garnache, A. A. Kachanov, F. Stoeckel, and R. Houdré, "Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy," J. Opt. Soc. Am. B 17, 1589-1598 (2000)
[10]G. B. Kim, J.Y. Kim, J. Lee, J. Yoo, K.S. Kim, S.M. Lee, S. Cho, S.J. Lim, T.
Kim, and Y. Park, “End-pumped green and blue vertical external cavity surface emitting laser devices.” Appl. Phys. Lett. 89, 181106 (2006)
[11] J.E. Hastie, L.G. Morton, A.J. Kemp, and M.D. Dawson, A.B. Krysa and J.S.
Roberts, “Tunable ultraviolet output from an intra-cavity frequency-doubled red vertical-external-cavity surface-emitting laser,” Appl. Phys. Lett. 89, 061114 (2006)
[12] J. Rautiainen, A. Härkönen, V.-M. Korpijärvi, P. Tuomisto, M. Guina, and O. G.
Okhotnikov, "2.7 W tunable orange-red GaInNAs semiconductor disk laser," Opt.
Express 15, 18345-18350 (2007)
[13] M. Fallahi, L. Fan, Y. Kaneda, C. J. Hader, H. Li, J. V. Moloney, B. Kunert, W.
Stolz, S. Koch, J. Murray, R. Bedford, “5 W yellow laser by intra-cavity frequency doubling of high-power vertical external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett. 20, pp. 1700-1702, (2008)
[14] Hans Lindberg, Anders Larsson, and Martin Strassner, "Single-frequency operation of a high-power, long-wavelength semiconductor disk laser," Opt. Lett.
30, 2260-2262 (2005)
[15] Peter Klopp, Florian Saas, Martin Zorn, Markus Weyers, and Uwe Griebner,
"290-fs pulses from a semiconductor disk laser," Opt. Express 16, 5770-5775 (2008)
[16] A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller,
"2.1-W picosecond passively mode-locked external-cavity semiconductor laser,"
Opt. Lett. 30, 272-274 (2005)
[17] O. Casel, D. Woll, M.A. Tremont, H. Fuchs, R.Wallenstein, E. Gerster, P. Unger, M. Zorn and M. Weyers, “Blue 489-nm picosecond pulses generated by
intra-cavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser” Appl. Phys. B 81, 443–446 (2005)
[18] J. Lee , J. Kim , S. Lee , J. Yoo , K. S. Kim , S. Cho , S. J. Lim , G. B. Kim , S.
Hwang , T. Kim and Y. Park, “9.1-W high-efficient continuous-wave end-pumped vertical-external-cavity surface-emitting semiconductor laser,”
IEEE Photon. Technol. Lett., 18, pp. 2117, (2006).
[19] K. S. Kim, J. R. Yoo, S. H. Cho, S. M. Lee, S. J. Lim, J. Y. Kim, J. H. Lee, T. Kim, Y. J. Park, "1060 nm vertical-external-cavity surface-emitting lasers with an optical-to-optical efficiency of 44% at room temperature," Appl. Phys.
Lett. 88, 091107 (2006)
[20]J. E. Hastie , J.-M. Hopkins , S. Calvez , C. W. Jeon , D. Burns , R. Abram , E.
Riis , A. I. Ferguson and M. D. Dawson, “0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser,” IEEE Photon.
Technol. Lett., 15, pp. 894, (2004)
[21]
S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl.
Phys. Lett. 82, 3620 (2003).
[22]H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,”
Electron. Lett., 40, 601-602, (2004)
[23] H. Lindberg, M. Strassner, M. Bengtsson,and A. Larsson ”High power optically pumped 1550nm VECSEL with a bonded silicon heat spreader”, IEEE Photonics Technol. Lett, May 200
[24] J.M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K.
Köhler, J. Wagner, and D. Burns, "High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 µm," Opt. Lett. 33, 201-203 (2008)
[25] J.-M. Hopkins, A. J. Maclean, D. Burns, E. Riis, N. Schulz, M. Rattunde, C.
Manz, K. Köhler, and J. Wagner, "Tunable, Single-frequency, Diode-pumped 2.3µm VECSEL," Opt. Express 15, 8212-8217 (2007)
[26] Nils Hempler, John-Mark Hopkins, Alan J. Kemp, Nico Schulz, Marcel Rattunde, Joachim Wagner, Martin D. Dawson, and David Burns, "Pulsed pumping of semiconductor disk lasers," Opt. Express 15, 3247-3256 (2007)
[27] B. Rudin, A. Rutz, M. Hoffmann, D. J. H. C. Maas, A.-R. Bellancourt, E. Gini, T.
Südmeyer, and U. Keller, "Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode," Opt. Lett. 33, 2719-2721 (2008)
[28] A.R. Zakharian, J. Hader, J.V. Moloney, S.W. Koch, and S. Lutgen,
“Experimental and theoretical analysis of optically pumped semiconductor disk lases,” Appl Phys Lett. 83, pp.1313-1315,(2003)
[29] A. J. Kemp, G. J. Valentine, J.M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M.
D. Dawson, and D. Burns, "Thermal managenemt in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heat-spreader approach,"
IEEE J. Quantum. Electron. 41, 148-155 (2005).
[30] R. G. Bedforda, M. Kolesikb, J. L. A. Chillac, M. K. Reedc, T. R. Nelsona, J. V.
Moloney, “Power-limiting mechanisms in VECSELs,” Proc. of SPIE. 5814
199-208, (2005)
[31] A. J. Kemp, A.J. Maclean, J. E. Hastie, S. A. Smith, J.M. Hopkins, S. Calvez, G.
J. Valentine, M. D. Dawson and D. Burns, “ Thermal lensing, thermal management and transverse mode control in microchip VECSELs.” Appl. Phys.
B 83, 189–194 (2006)
[32] H. Lindberg, M.Strassner, J. Bengtsson and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550nm,” IEEE Photon Technol. Lett, 16, pp.362-364, (2004).
[33] H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Topics Quantum Electron.,11, 1126-1134 (2005)
[34]J. P. Tourrenc, S. Bouchoule, A. Khadour, J. Decobert, A. Miard, J. C. Harmand, and J. L. Oudar, "High-Power RT CW Operation of an OP-VECSEL at 1.56 µm with Hybrid Metallic-Metamorphic Mirrors," in CLEO/Europe and IQEC 2007
Conference Digest, , paper CB1_3. (Optical Society of America, 2007)
[35] Jussi Rautiainen, Jari Lyytikäinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion," Opt. Express
16, 21881-21886 (2008)
[36] Jari Lyytikäinen, Jussi Rautiainen, Lauri Toikkanen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "1.3-µm optically-pumped semiconductor disk laser by wafer fusion," Opt. Express 17, 9047-9052 (2009)
Reference (2.2)
[1] A.S. Grabtchikov, A.N. Kuzmin, V.A. Lisinetskii, V.A. Orlovich, A.A.
Demidovich, K.V. Yumashev, N.V. Kuleshov, H.J. Eichler, and M.V. Danailov, ”
Passively Q-switched 1.35 µm diode pumped Nd:KGW laser with V:YAG saturable absorber” Opt.Mater. 16, 349 (2001).
[2]. R. Fluck, R. Häring, R. Paschotta, R. Gini, H. Melchior, and U. Keller,”Eyesafe pulsed microchip laser using semiconductor saturable absorber mirrors,” Appl.
Phys. Lett. 72, 3273 (1998).
[3]. R.D. Stultz, V. Leyva, and K. Spariosu, ”Short pulse, high-repetition rate, passively Q-switched Er:yttrium-aluminum-garnet laser at 1.6 microns,” Appl.
Phys. Lett. 87, 241118 (2005).
[4]. V. G. Savitski, N. N. Posnov, P. V. Prokoshin, A. M. Malyarevich, K. V. Yumashev, M. I. Demchuk, and A.A. Lipovski,” PbS-doped phosphate glasses saturable absorbers for 1.3-µm neodymium lasers,” Appl. Phys. B 75, 841 (2002).
[5]. D. L. Spies, ”Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser array,” Appl. Phys. Lett. 47, 74 (1985).
[6]. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, ”Design and characteristics of high-power(>0.5-W)diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE J. Sel.
Topics Quantum Electron. 5, 561 (1999).
[7]. A. C. Tropper, H. D. Foreman, A. Garnache, K. G. Wilcox, and S. H. Hoogland,
“Vertical-external-cavity semiconductor lasers,” J. Phys. D 39, R74 (2004).
[8]. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S.Watahiki, and Y. Yazawa,”
GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance” Jpn. J. Appl. Phys. Part 1 35,1273 (1996).
[9]. J. M. Hopkins, S. A. Smith, C. W. Jeon, H. D. Sun, D. Burns, S. Calvez, M. D.
Dawson, T. Jouhti, and M. Pessa, ”0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 µm,” Electron. Lett. 4, 30 (2004).
[10]. R. Fluck, R. Häring, R. Paschotta, R. Gini, H. Melchior, U. Keller, ”Eyesafe pulsed microchip laser using semiconductor saturable absorber mirrors,” Appl.
Phys. Lett. 72, 3273–3275 (1998)
[11]. R.D. Stultz, V. Leyva, K. Spariosu, “Short pulse, high-repetition rate, passively Q-switched Er:yttrium–aluminum–garnet laser at 1.6µm,” Appl. Phys. Lett. 87, 241118 (2005)
[12]. H.T. Huang, J.L. He, X.L. Dong, C.H. Zuo, B.T. Zhang, G. Qiu, Z.K. Liu,
“High-repetition-rate eye-safe intracavity KTA OPO driven by a diode-end-pumped Q-switched Nd:YVO4 laser,” Appl. Phys. B 90, 43–45 (2008)
[13]. S. Kück, K. Petermann, U. Pohlmann, U. Schönhoff, G. Huber, “Tunable room-temperature laser action of Cr4+-doped Y3ScxAl5−xO12,” Appl. Phys. B 58, 153–156 (1994)
[14]. N.V. Kuleshov, A.A. Lagatsky, A.V. Podlipensky, V.P. Mikhailov, A.A.
Kornienko, E.B. Dunina, S. Hartung, G. Huber, “Fluorescence dynamics, excited-state absorption and stimulated emission of Er3+ in KY(WO4
)
2,” J. Opt.Soc. Am. B 15, 1205–1212 (1998)
[15]. I. Sokólska, E. Heumann, S. Kück, T. Łukasiewicz, “Laser oscillation of Er3+:YVO4 and Er3+, Yb3+:YVO4 crystals in the spectral range around 1.6 µm.
Appl. Phys. B 71, 893–896 (2000)”
[16]. A. Sennaroglu, “Broadly tunable Cr4+-doped solid-state lasers in the near infrared and visible,” Prog. Quantum Electron. 26, 287– 352 (2002)
[17]. P. ˇ Cerný, H. Jelínkova, P. Zverev, T.T. Basiev, “Solid state lasers with Raman frequency conversion,” Prog. Quantum Electron. 28, 113–143 (2004)
[18].Y.F. Chen, “Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd:YVO4 crystal.” Opt. Lett. 29, 2172–2174 (2004)
[19].Y.F. Chen, “Efficient 1521-nm Nd :GdVO4 Raman laser.” Opt. Lett. 29, 2632–2634 (2004)
[20]. J.T. Murray, R.C. Powell, D. Smith, W. Austin, R.A. Stolzenberger, “Generation of 1.5 µm radiation through intracavity solidstate Raman shifting in Ba(NO3
)
2nonlinear crystals”. Opt. Lett. 20, 1017–1019 (1995)
[21]. A. Agnesi, S. Dell’Acqua, G. Reali, “Diode-pumped quasi-cw intracavity optical parametric oscillator at 1.57 µm with efficient pulse shortening.” Appl. Phys. B
70, 751–753 (2000)
[22]. Y.F. Chen, S.W. Chen, Y.C. Chen, Y.P. Lan, S.W. Tsai, “Compact efficient intracavity optical parametric oscillator with a passively Q-switched Nd:YVO4/Cr4+:YAG laser in a hemispherical cavity.” Appl. Phys. B 77, 493–495 (2003)
[23]. Y.F. Chen, L.Y. Tsai, “Comparison between shared and coupled resonators for passively Q-switched Nd:GdVO4 intracavity optical parametric oscillators.”
Appl. Phys. B 82, 403–406 (2006)
[24]. Y.F. Chen, “Design criteria for concentration optimization in scaling diode end-pumped lasers to high powers: influence of thermal fracture.” IEEE J.
Quantum Electron. 35, 234–239 (1999)
[25]. H.J. Zhang, X.L. Meng, L. Zhu, H.Z. Zhang, P. Wang, J. Dawes, C.Q. Wang, Y.T. Chow, “Investigation on the growth and laser properties of Nd:GdVO4
single crystal.” Cryst. Res. Technol. 33, 801–806 (1998)
[26]. T. Ogawa, Y. Urata, S. Wada, K. Onodera, H. Machida, H. Sagae, M. Higuchi, K. Kodaira, “Efficient laser performance of Nd:GdVO4 crystals grown by the floating zone method.” Opt. Lett.28, 2333–2335 (2003)
[27]. V. Lupei, N. Pavel, Y. Sato, T. Taira, “Highly efficient 1063-nm continuous-wave laser emission in Nd:GdVO4.” Opt. Lett. 28, 2366–2368 (2003)
[28]. J. Minch, S.H. Park, T. Keating, S.L. Chuang, “Theory and experiment of In1−x−yGaxAsyP1−y and In1−x−yGaxAlyAs long wavelength strained quantum-well lasers.” J. IEEE. Quantum Electron. 35, 771–782 (1999)
[29]. J.P. Donnelly, J.N.Walpole, S.H. Groves, R.J. Bailey, L.J.Missaggia, A.
Napoleone, R.E. Reeder, C.C. Cook, “1.5-µm tapered-gainregion lasers with high-CW output powers.” IEEE Photon. Technol. Lett. 10, 1377–1379 (1998) [30]. N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M.H. Hu, X.S. Liu, M.-J. Li, R.
Bhat, C.E. Zah, “Long-wavelength verticalcavity surface-emitting lasers on InP with lattice matched AlGaInAs–InP DBR grown by MOCVD.” IEEE J. Sel. Top.
Quantum Electron 11, 990–998 (2005)
[31]. S.R. Šelmi´c, G.A. Evans, T.M. Chou, J.B. Kirk, J.N. Walpole, J.P. Donnelly, C.T. Harris, L.J. Missaggia, “Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector.” IEEE Photon. Technol. Lett.
14, 890–892 (2002)
[32]. K.W. Su, S.C. Huang, A. Li, S.C. Liu, Y.F. Chen, K.F. Huang,
“High-peak-power AlGaInAs quantum-well 1.3-mm laser pumped by a diode-pumped actively Q-switched solid-state laser.” Opt. Lett. 31, 2009–2011 (2003)
[33] M. Schmid, Sarah Benchabane, et al., “Optical in-well pumping of a vertical-external-cavity surface-emitting laser.” Appl. Phys. Lett., 84, No. 24, 4860-4862 (2004).
[34] S.-S. Beyertt, M. Zorn, et al., “Optical In-well Pumping of a Semiconductor Disk Laser With High Optical Efficiency.” IEEE J. Quantum Electron. 41, No. 12, 1439-1449 (2005).
[35] N. Schulz, M. Rattunde, C. Ritzenthaler, et al., “ Resonant optical in-well pumping of an (AlGaIn)(AsSb)-based vertical-external-cavity surface-emitting
laser emitting at 2.35 µm.” Appl. Phys. Lett., 91-091113 (2007).
[36] J.Wagner, N. Schulz, M. Rattunde, et al., “Barrier-and in-well pumped GaSb-based 2.3 µm VECSELs.” Phys. Stat. Sol. (c) 4, No. 5, 1597–1600 (2007).
[37] W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson,
“Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser.” Appl. Opts. 45, No. 29, 7729-7735 (2006).
[38] N. Schu;z, M. Rattunde, C. Manz, K. Kohler, C. Wild, “GaSb-based VECSEL emitting around 2.35µm employing different optical pumping concepts.“ SPIE Vol.6184, (2006)
[39] T.Albrecht, W.Diehl, P. Brick, W. Reill, S. Lutgen, J. Luft, “Efficient quantum-well pumping of semiconductor disk lasers at 920nm.“ Conference on lasers& Electro-Optics(CLEO) 1, pp.577-578 (2005)
[40] M. Ross, “YAG laser operation by semiconductor laser pumping.” IEEE 56, p.
196-197. ,(1968)
[41]
A. Giesen, H. Hüge, A. Voss, K. Wittig, U. Brauch and H. Opower, “Scalable concept for diode-pumped high-power solid-state lasers.” Appl. Phys. B 58,
365–372, (1994)[42] D. Dudley, N. Hodgson, H. Hoffman, and F. Kopper, "Direct 880 nm diode-pumping of vanadate lasers," in Conference on Lasers and Electro-Optics (CLEO), Vol. 73 of OSA (2002)
[43] Henry Plaessmann, Sean A. Re, Joseph J. Alonis, David L. Vecht, and William M.
Grossman, "Multipass diode-pumped solid-state optical amplifier," Opt. Lett. 18, 1420- (1993)
[44] N. Pavel, V. Lupei, and T. Taira, "1.34-µm efficient laser emission in highly-doped Nd:YAG under 885-nm diode pumping," Opt. Express 13,
7948-7953 (2005)
[45] Zhiyun Huang, Yidong Huang, Yujin Chen, and Zundu Luo, "Theoretical study on the laser performances of Nd3+:YAG and Nd3+:YVO4 under indirect and direct pumping," J. Opt. Soc. Am. B 22, 2564-2569 (2005)
[46] V. Lupei, G. Aka, and D. Vivien, "Highly efficient, 0.84 slope efficiency, 901 nm, quasi-two-level laser emission of Nd in strontium lanthanum aluminate,"
Opt. Lett. 31, 1064-1066 (2006)
[47] N. Pavel, V. Lupei, J. Saikawa, T. Taira and H. Kan, “Neodymium concentration dependence of 0.94-, 1.06- and 1.34-µm laser emission and of heating effects under 809- and 885-nm diode laser pumping of Nd:YAG” Appl. Phys. B 82, p.
599, (2006)
[48] N. Pavel, K. Lünstedt, K. Petermann, and G. Huber, "Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 µm with intracavity frequency doubling," Appl. Opt. 46, 8256-8263 (2007)
[49] X. Li, X. Yu, J. Gao, F. Chen, J. Peng, J. Yu, and D. Chen, “Improvement in the
laser performances of an A-O Q-switched Nd:GdVO
4laser by direct-diode pumping into the emitting level.” Laser Physics. 18, No. 7, pp. 831–834. (2008)
[50] X. Ding, R. Wang, H. Zhang, X.Y. Yu, W.Q. Wen, P. Wang, J.Q. Yao“High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm”
Optics Communications 282 ,981–984,(2009)
Reference (2.3)
[1]. C. E. Zah, R. Bhat, B.N. Pathak, F. Favire, W. Lin, M.C. Wang, N. C.
Andreadakis, D.M. Hwang, M.A. Koza, T.P. Lee, Z. Wang, D. Darby, D.
Flanders,”High-performance uncooled 1.3-µm AlxGayIn1-x-yAs/InP strained-layer quantum-well lasers for subscriberloop applications.” IEEE J. Quantum Electron.
30, 511 (1994).
[2]. J. Minch, S. H. Park, T. Keating, and S. L. Chuang,” Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers.” IEEE J. Quantum Electron. 35, 771 (1999).
[3]. S.R. Selmic, T.M. Chou, J.P. Sih, J.B. Kirk, A. Mantie, J.K. Butler, D. Bour, and GA.Evans, ”Design and characterization of 1.3-µm AlGaInAs-InP multiple-quantum-well lasers”IEEE J. Sel. Top. Quantum Electron. 7, 340 (2001).
[4]. N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. H. Hu, X. S. Liu, M.-J. Li, R.
Bhat, and C. E. Zah,”Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD.” IEEE J.Sel.
Top. Quantum Electron. 11, 990 (2005).
[5]. O. Hanaizumi, K. T. Jeong, S. Y. Kashiwada, I. Syuaib, K. Kawase, and S.
Kawakami, “Observation of gain in an optically pumped surface-normal multiple-quantum-well optical amplifier.” Opt. Lett. 21, 269 (1996).
[6]. F. Sanchez, M. Brunel, and K. Aït-Ameur, ”Pump-saturation effects in end-pumped solid-state lasers.” J. Opt. Soc. Am. B 15, 2390 (1998)
Reference (2.4)
[1]. J.J. Zayhowski, A. Mooradian, “Single-frequency microchip Nd lasers. Opt. Lett.
14, 24–26 (1989)
[2]. G.J. Dixon, L.S. Lingvay, R.H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers.” Proc.SPIE 1104, 107 (1989)
Reference (2.5)
[1]. J.J. Zayhowski, A. Mooradian, “Single-frequency microchip Nd lasers. Opt. Lett.
14, 24–26 (1989)
[2]. G.J. Dixon, L.S. Lingvay, R.H. Jarman, “Properties of close coupled monolithic, lithium neodymium, tetraphosphate lasers.” Proc.SPIE 1104, 107 (1989)
[3] L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J.V. Moloney, J. T. Murray, R.
Bedford, W. Stolz, and S.W. Koch, "Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme," Opt. Lett. 31, 3612-3614 (2006)
[4] E.J. Saarinen, A. Härkönen, S. Suomalainen, and O.G. Okhotnikov, "Power scalable semiconductor disk laser using multiple gain cavity," Opt. Express 14, 12868-12871 (2006)
[5] N. Hempler, J.M. Hopkins, A.J. Kemp, N. Schulz, M. Rattunde, J. Wagner, M. D.
Dawson, and D. Burns, "Pulsed pumping of semiconductor disk lasers," Opt.
Express 15, 3247-3256 (2007)
[6] L. Fan, M. Fallahi, A. R. Zakharian, J. Hader, J. V. Moloney, R. Bedford, J.T.
Murray, W. Stolz, and S.W. Koch, “Extended Tunability in a Two-Chip
VECSEL” IEEE. Photo. Tech. Lett. 19, No. 8, 544-546 (2007)
[7] S. C. Huang, H. L. Chang, K. W. Su, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang,
“AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser,” Appl.
Phys. B 94, 483-487 (2009).
Reference (Chapter Three)
[1] Y. Kalisky, “Cr4+-doped crystals: their use as lasers and passive Q switches,” Prog.
Quantum Electron. 28, 249-303 (2004).
Reference (3.2)
[1] J. J. Zayhowski and C. Dill III, “Diode-pumped passively Q-switched picosecond microchip laser,” Opt. Lett. 19, 1427-1429 (1994).
[2] S. Forget, F. Druon, F. Balembois, P. Georges, N. Landru, J.-P. Fève, J. Lin, and Z.
Weng, “Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4
monolithic microchip laser,” Opt. Commun. 259, 816-819 (2006).
[3] Y. F. Chen and S. W. Tsai, “Simultaneous Q-switching and mode-locking in a diode-pumped Nd:YVO4/Cr4+:YAG laser,” IEEE J. Quantum Electron.37, 580-586 (2001).
[4] Y. Kalisky, “Cr4+-doped crystals: their use as lasers and passive Q switches,” Prog.
Quantum Electron. 28, 249-303 (2004).
[5] A. Sennaroglu, U. Demirbas, S. Ozharar, and F. Yaman, “Accurate determination of saturation parameters for Cr4+-dpoed solid-state saturable absorbers,” J. Opt.
Soc. Am. B 23, 241-249 (2006).
[6] G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, “Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers,” J. Opt. Soc. Am. B 16, 376-388 (1999).
[7] R. Häring, R. Paschotta, R. Fluck, E. Gini, H. Melchior, and U. Keller, “Passively Q-switched microchip laser at 1.5 μm,” J. Opt. Soc. Am. B 18, 1805-1812 (2001).
[8] J. J. Degnan, “Optimization of passively Q-switched lasers,” IEEE J. Quantum Electron. 31, 1890-1901 (1995).
[9] G. Xiao and M. Bass, “A generalized model Q-switched lasers including excited state absorption in the saturable absorber,” IEEE J. Quantum Electron. 33, 41-44 (1997).
[10] X. Zhang, S. Zhao, Q. Wang, Q. Zhang, L. Sun, and S. Zhang, “Optimization of Cr4+-doped saturable-absorber Q-switched lasers,” IEEE J. Quantum Electron. 33, 2286-2294 (1997).
[11] R. E. Nahory, M. A. Pollack, W. D. Johnston, Jr., and R. L. Barns, “Band gap versus composition and demonstration of Vegard’s law for In1-xGaxAsyP1-y
lattice matched to InP,” Appl. Phys. Lett. 33, 659-661 (1978).
[12] W. T. Tsang, F. K. Reinhart, and J. A. Ditzenberger, “1.3 µm wavelength GaInAsP/InP double-heterostructure lasers grown by molecular beam epitaxy,”
Appl. Phys. Lett. 41, 1094-1096 (1982).
[13] H. Temkin, D. Coblentz, R. A. Logan, J. P. van der Ziel, T. Tanbun-Ek, R. D.
Yadvish, and A. M. Sergent, “High temperature characteristics of InGaAsP/InP laser structures,” Appl. Phys. Lett. 62, 2402-2404 (1993).
[14] A. Li, S. C. Liu, K. W. Su, Y. L. Liao, S. C. Huang, Y. F. Chen, and K. F. Huang,
“InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-µm lasers,” Appl. Phys. B 84, 429-431 (2006).
[15] K. Alavi, H. Temkin, W. R. Wagner, and A. Y. Cho, “Optically pumped 1.55-µm double heterostructure GaxAlyIn1-x-yAs/AluIn1-uAs lasers grown by molecular beam epitaxy,” Appl. Phys. Lett. 42, 254-256 (1983).
[16] W. T. Tsang and N. A. Olsson, “New current injection 1.5-µm wavelength GaxAlyIn1-x-yAs/InP double-heterostructure laser grown by molecular beam epitaxy,” Appl. Phys. Lett. 42, 922-924 (1983).
[17] C. E. Zah, R. Bhat, B. N. Pathak, F. Favire, W. Lin, M. C. Wang, N. C.
Andreadakis, D. M. Hwang, M. A. Koza, T. P. Lee, Z. Wang, D. Darby, D.
Flanders, and J. J. Hsieh, “High-performance uncooled 1.3-µm AlxGayIn1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications,” IEEE J. Quantum Electron.,30, 511–521 (1994).
[18] N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. H. Hu, X. S. Liu, M.-J. Li, R. Bhat, and C. E. Zah, “Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs–InP DBR grown by MOCVD,” IEEE J. Sel.
Topics Quantum Electron, vol. 11, 990–998 (2005).
[19].Peng Li, Yufei Li, Yuming Sun, Xueyuan Hou, Huaijin Zhang, and Jiyang Wang.
“Passively Q-switched 1.34 µm Nd:YxGd1-xVO4 laser with Co2+:LaMgAl11O19
saturable absorber” Optics Express, 14, pp. 7730-7736 (2004)
[20].V.G. Savitski , A.M. Malyarevich, K.V. Yumashev, V.L. Kalashnikov, B.D.
Sinclair, H. Raaben and A.A. Zhilin, “Experiment and modeling of a
Sinclair, H. Raaben and A.A. Zhilin, “Experiment and modeling of a