p +
Poly-Gate SiO
2SiNx
SiO2
p +
V
G>0
V
D<0
△V
Program
(a) Programming operation
p +
Poly-Gate SiO
2SiNx
SiO2
p +
V
G<0
V
D>0
△V
Erase
(b) Erasing operation
Fig. 3-17 Charge injection region in the P-channel memory as programming and erasing operation
3.4 Summary
The impacts of tilt implantaion on programming and erasing performance are beneficial for the SONOS device. We can make injection efficiency higher by higher electrical field during programming and erasing operation to get better programming and erasing speed. Due to the narrower electric field distribution and the closely charge stored region because of the similar operation methods of programming and erasing, we improve the endurance characteristic. The Zener device shows a little degradation in the data retention and drain disturbance than the conventional device. We can choice the lightly tilt implantation dose to avoid these disadvantages.
3-5 Reference
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CHAPTER 4 Conclusion
The thesis of “ The Characteristic of SONOS Flash Memory with Zener Junction ” was proposed. The results of each chapter are summarized as below.
In chapter 2, the impact of Zener junction on programming and erasing
performance is beneficial for the SONOS device. The injection efficiency increased by higher electric firld during programming and erasing gets faster programming and erasing speed. The double sides Zener device just shows a little degradation in the data retention compared with the conventional device.
In chapter 3, the impact of Zener junction on programming and erasing
performance is beneficial for the SONOS device. We can make injection efficiency higher during programming and erasing to get better programming and erasing speed.
Due to the narrower electric field distribution and the closely charge injection region during programming and erasing operation, we improve the endurance characteristics.
But the Zener device shows much degradation in the data retention and drain disturbance, it is still a difficult in our study.
In the thesis, we improve the carrier injection efficiency of both n-channel memory and p-channel memory with the Zener junction structure. And the drain side FN erasing method in p-channel SONOS memory shows higher hole injection efficiency in
p-channel memory.Endurance characteristics are also improved by the Zener junction structure because of the less stress time during programming and erasing. This memory cell with Zener junction can be implemented in advance charge trapping memory application.
簡歷
姓 名: 梁文彥
性 別: 男
出生日期: 中華民國七十年十一月十七日
籍 貫: 高雄市
地 址: 高雄市小港區店鎮里明芳街 52 號
學 歷: 國立中山大學 電子工程學系
(民國 95 年 6 月)
國立交通大學 電子研究所固態組 碩士班
(民國 96 年 7 月)
論文題目: 利用齊納接面改善氧化矽/氮化矽/氧化矽 堆疊式快閃記憶體之特性
Study on SONOS Flash Memory with Zener Junction at Source/Drain Side
電子郵件: [email protected]