O c c. P ro b a b il ity
46
Chapter 5 Conclusion
In this report, a 3D atomistic simulation is used in exploring random telegraph noise in two parts, including statistic devices property and single cell characteristic.
Geometry, doping concentration and electron density dependence of is discussed in first part. Then we investigate the relationship between number fluctuation and percolation effect in second part. Pocket implant and VB effect on RTN amplitude is applied to enhance the points we supply in chapter 1.
Later we discuss bias temperature instability induced current degradation and find out it follows same behavior like RTN such as percolation effect and power-law dependence of standard deviation.
At last retention loss induced threshold voltage variation is investigated in SONOS flash memory. We find out that percolation still exists here in the measurement. Prediction of threshold voltage distribution is implemented in this chapter, too.
Finally, it turns out to be all single charge induced Vt and Id variation would follows same behavior, namely, percolation effect.
47
Reference
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