9-1 Conclusion
a-C:F films of high fluorine content were obtained by ECR-CVD method using tetrafluoromethane (CF4) and acetylane (C2H2) as precursor gases. Dielectric constant of the as-deposited films can be as low as 1.5 for those prepared at a high CF4 flow ratio, and dielectric strength of the annealed films is beyond 30 MV/cm, far superior to that of SiO2 films with the same thickness. The huge transient current spike or a breakdown occurring during the I-V test was attributed to the nano-voids found in the as-deposited films which work to trigger the discharge. The averaged conductivity of the films was related with the measured sp2/sp3 bonding fraction which indicated a threshold fraction at around 40%.
The sp3 bond ratio can be increased by the fluorine concentration through an increase in the fluorocarbon flow ratio. The FTIR and ESCA results reveal that the structure of the a-C:F films prepared at various CF4 flow ratios are different. Furthermore, the result of HREELS reveals that annealing of the films increases the carbon double bond structures in the a-C:F films. The higher CF4 flow ratios, not only produce more sp3 linear structures, but also smooth and soften the a-C:F films. There is a lot of structural variation after annealing; therefore, the electrical and optical properties of the a-C:F films are different from these of the as-deposited films. The higher fluorine concentration promotes a greater number of
fluorine carbon bonds in the films and therefore produces a higher optical band gap. Furthermore, annealing induces the sp2 structure in the a-C:F film, which will extend the photoluminescence lifetime. The short carriers lifetime in the a-C:F film makes PL peak blue-shift.
9-2 Suggestions for Future Study
There are a number of studies needed to be done in the future. There are physical and chemical properties to be investigated. The following topics are suggested for the future studies:
(1) Improving the hardness of a-C:F films.
(2) Delineating the dependence of charge carrier concentration and mobility on the sp2/sp3 bonding fraction.
(3) Increasing the thermal stability of a-C:F films.
(4) Investigating the field emission properties.
(5) Developing a novel characterization metrology to measure the porosity of low k films.
簡歷 姓名: 黃昆平
性別: 男
年齡: 33 歲 (民國 60 年 7 月 30 日生) 籍貫: 台灣省苗栗縣
地址: 苗栗縣南庄鄉員林村 5 鄰小南埔 41 號
學歷: 國立台北工業專科學校礦冶工程科材料組畢業 (76 年 9 月- 81 年 6 月)
國立中興大學材料工程科畢業 (84 年 9 月- 86 年 6 月)
國立交通大學材料科學與工程學系畢業 (86 年 9 月- 93 年 6 月)
博士論文題目:
氟化非晶質碳膜之性質
The Properties of Fluorinated Amorphous Carbon Films
經歷：1. 中華民國斐陶斐(Phi Tau Phi)榮譽學會會員(86 年 6 月)。
2. 91 年 9 月至 92 年 8 月至德國 Max-Planck Institute (MPI) Stuttgart 固態物理研究所當交換學生一年。期間參與 MPI 及 Infineon 公司共同合作 “單壁及多壁奈米碳管在不同電極上
的電子傳輸” 之研究。
Publications
Journal Papers:
1. K. P. Huang, and H. C. Shih, “ Preparation of high hard DLC Films by ECR-CVD. Master Thesis.
2. S. L. Sung, X. J. Guo, K. P. Huang, F. R. Chen and H. C. Shih, “The strengthening mechanism of DLC film on silicon by MPECVD”, Thin Solid Film, 340 (1998) 169.
3. S. L. Sung, T. G. Tsai, K. P. Huang, J. H. Huang and H. C. Shih, “The Effect of D. C. Bias on the Synthesis of Crystalline Carbon Nitrides on Silicon by Microwave Plasma Enchanced Chemical Vapor Deposition (CVD)”, Jpn. J. Appl. Phys., 37 (1998) L148.
4. K. P. Huang, P. Lin, and H. C. Shih, “Structure and Electrical Studies of Fluorinated amorphous Carbon Films Prepared by Electron Cyclotron Resorance/Chemical-Vapor Deposition”, Jpn. J. Appl. Phys. 42 (2003) 3598.
5. S. H. Lai, K. P. Huang, Y. M. Pan, Y. L. Chen, L. H. Chan, and H. C.
Shih, “Electron Field Emission from Fluorinated amorphous Nanoparticles on Porous Alumina” Chem. Phys. Lett. 382 (2003) 567.
6. K. P. Huang, P. Lin, and H. C. Shih, “Structures and Properties of
Fluorinated amorphous Carbon Films”, J. Appl. Phys. 96, 354 (2004).
Conference:
1. H. C. Shih, S. L. Sung, T. G. Tsai and K. P. Huang, 1997, "Synthesis and Characterization of Carbon Nitride Film on Silicon by Microwave Plasma Enhanced CVD", International Symposium on Surfaces and Thin Films, Academia Sinica and SRRC, Taipei, Taiwan, March 25-28.
2. H. C. Shih, S. L. Sung, F. R. Chen, X. J. Guo and K. P. Huang, 1997,
"The Strengthening Effect of DLC Coating on Silicon prepared by MPECVD", International Conference on Metallurgical Coatings and Thin Films, Abstract DP17, San Diego, CA., April 21-25.
3. X. J. Guo, S. L. Sung, K. P. Huang and H. C. Shih, 1997, "Effects of D.C. Bias Voltage on the Formation of Interfacial Layer of Diamond on Silicon by MPECVD Synthesis", 8th European Conference on Diamond, Diamond-like and Related Materials jointly with Applied Diamond Conference 1997 and 4th International Conference on the Applications of Diamond Films and Related Materials, Abstract 15.004, Heriot-Watt University, Edinburgh, Scotland, 3-8 August
4. X. W. Liu, K. P. Huang, J. H. Lin, L. T. Chao, P. Lin, and H. C. Shih,
“Deposition of Thermal Stable Amorphous Carbon Nitride Thin Films with Low Dielectric Constants by ECR-CVD”, American Vacuum Society 47th International Symposium, Boston USA, October 2-6 (2000).
5. H. C. Shih, S. L. Sung, T. G. Tsai and K. P. Huang, 1997, "Synthesis and Characterization of Carbon Nitride Film on Silicon by Microwave Plasma Enhanced CVD", International Syposium on Surfaces and Thin Films, Academia Sinica and SRRC, Taipei, Taiwan, March 25-28.
6. Y. L. Chen, K. P. Huang, Shih-Hsiang Lai , Yi-Min Pan, P. Lin, H. C.
Shih, "Synthesized The Low Dielectric Constant Material of Fluorinated Amorphous Carbon Films by ECR-CVD ", Proceeding of The 2002 Annual Conference of The Chinese Society of Materials Science , November 22-23 (2002) 72, Taipei.
7. Yi-Min Pan, Shih-Hsiang Lai , Y. L. Chen, K. P. Huang, P. Lin, H. C.
Shih, "Preparing and Analyzing Doped Nitrogen Fluorinated Amorphous Carbon by ECR-CVD, and Characterized, November 22-23(2002) 74, Taipei.
8. K. P. Huang, Pang Lin, S. Roth, The Electronic Properties of Fluorinated Amorphous Carbon, Proceeding of Science and Technology of Organic
Semiconductors, 09-11 December 2002 at Physikzentrum Bad Honnef (Germany).