Chapter 6 Conclusions And Future Works
6.1 Conclusions
With the dimension(s) of materials shrinking to 1 to 100 nm, especially close to their Bohr radii, they can exhibit special identities. We can employ them in our thin films or devices to accomplish specific purposes. In this dissertation, we utilize three kinds of ultrathin oxide layers to realize three green devices: an OBD with an interfacial Al-O compound layer, an OBD with a MoOx nanoclusterlike layer, and a high Voc MIS solar cell using a stacking structure.
In the beginning, an OBD with an n-Si/Alq3/Al structure is fabricated and its characteristics are also analyzed. We find that the bistability of the OBD results from the charge trapping in the Al-O compound layer, which is formed at the Alq3/Al interface. We can also tune the electrical features of the OBD, which are affected by the surface roughness of the Alq3 thin film, by controlling the deposition rate of the Alq3 thin film.
After that, we pay attention to another OBD, p+-Si/Alq3/nanostructured MoOx/Alq3/Al.
The MoOx nanoclusterlike layer (the nanostructured MoOx layer) behaves as trap sites in the OBD, and the resistance switching of the OBD can be observed in the I-V curves as charges occupy or leave the trap sites. After the OBD is switched into the high conductance state, the current keeps increasing with voltage, and no NDR exhibits in the I-V curves. This is because the effective polarized field generated by the MoOx nanoclusterlike layer is not large enough to repel the injected carriers.
In addition, a high Voc MIS solar cell using a stacking structure is reported. We stack an n-type MIS solar cell and a p-type one to form a stacking MIS solar cell. The stacking cell
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provides 0.71 V Voc, greater than those of other reported MIS solar cells. It is worthy to mention that the stacking structure has great potential to carry out converting solar energy for hydrogen generation.
Finally, we deeply believe that the reported green devices will make a great influence on the future green technology.
6.2 Future Works
In the near future, we will/can focus on further promoting the performance of the three green devices.
In the case of the OBDs, the retention time of the OBDs is a key identity of memory.
However, the retention time of both OBDs has not fitted the requirements of the next generation nonvolatile memory yet. We can introduce deeper trap states in the OBDs (e.g., changing the shape of the MoOx layer) or barriers adjacent to the original tap sites to prevent trapped charges from escaping, and thus their retention time is raised.
In addition, we find that the failure of the OBDs occurs after several write-read-erase-read cycle tests. The failure probably attributes to many factors, such as device degradation due to the measurement environment, and leakage paths which result from particles introduced during fabrication. However, the failures of organic memory have not caused much attention. If we can recognize the failure mechanisms, we can figure out how to tackle the causes of the failure and then can uplift the stability and endurance of the OBDs, and even perhaps can understand the mechanisms responsible for the resistance switching.
With regard to the stacking MIS solar cell, it is evident that the stacking MIS solar cell offers higher Voc than other published MIS solar cells. But the stacking MIS solar cell can donate more superior performance as long as we can cut down its power losses. For example, we can modify (or change) our fabrication processes and then can optimize the processes for
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the requirement of current matching and for obtaining the excellent bonding interface and high quality MIS junctions. After that, we can use a surface passivation layer (such as AlOx) instead of the semitransparent metal layer to raise the amount of photons incident into the cell, and to induce an inversion layer for arguing the diffusion length and collection efficiency of carriers. Furthermore, from the point of view of energy collection, the performance of the stacking solar cell (such as conversion efficiency) can be further upgraded using two MIS solar cells with different bandgaps (such as Si/Ge, and Si/III-V).
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