Future Work

An in-situ pacivation layer for protecting the P3HT film

From our experimental results, P3HT OTFTs are sensitive to ambient conditions. Protection from the environment by encapsulation is critical to the stability of P3HT OTFTs. Therefore, using a suitable material as pacivation to protect P3HT film from environmental effect is another

important topic.

A new method to deposit P3HT thin film

There are three methods to deposit P3HT thin films: (1) spin-coating (2) dip-coating (3) drop-casting. In our experiment, we made use of spin-coating method to deposit P3HT thin films and attain an optimized deposition parameter for producing P3HT thin films. However, among the three methods to deposit P3HT thin films, the best method is drop-casting. Therefore, in the future we will make use of drop-casting to deposit P3HT thin films, and study the deposition parameters of drop-casting.

Thermal stability of P3HT OTFTs

In addition to studies of device lifetime and the stability of P3HT in different ambient, thermal stability is another topics .This is an important topic for various reasons. First, poly (3-hexylthiophenes) devices will be likely exposed to elevated temperatures during the fabrication process, due to the annealing requirements of other layers. Second, thermal cycling studies provide crucial insights into device lifetime and stability. [30]

New gate insulator materials for P3HT OTFTs

From the performance point of view, the most important parameters are charge carrier mobility, ON-OFF current ratio and the operational voltage range. However, the operating voltages of P3HT OTFT required to produce such performance were impractically high, around 50~60V. Although decreasing the thickness of SiO2 could reduce the operating voltages of P3HT OTFT, the gate leakage current would increase with decreasing the thickness of SiO₂ and affect the performance of P3HT OTFT. Therefore, the use of high dielectric gate insulator materials is possible for reducing operating voltages of P3HT and gate leakage current. [31], [32], [33]

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簡歷

姓名: 林榮祥 性別: 男

出生地: 台灣省台南縣

出生日期: 民國 68 年 01 月 11 日

住址: 台南縣歸仁鄉辜厝村中正路 193 巷 102 弄 30 號 學歷: 國立高雄師範大學物理系

(86 年 6 月至 90 年 6 月)

國立交通大學電子工程研究所碩士班 (91 年 6 月至 93 年 6 月)

Publications

[1] Shuo-Cheng WANG, Jen-Chung Lou, Bo-Lin Liou, Ron-Xion Lin, and Ching-Fa Yeh “ Process Improvement and Reliability Characteristics of Spin-on Poly-3-hexylthiophene Thin-Film Transistor＂Electron Devices and Materials Symposia, 2003