Chapter 5 The Growth Behavior of InAs QDs on InAlAs/GaAs
5.4 The Growth Behavior of the InAs QDs with Different
The optimized metamorphic hetero-structure is that there is no residual strain in the top layer above the graded metamorphic buffer. The residual strain in the top layer is affected by the amount of excessive indium content of metamorphic buffer over the indium content of the InAlAs inverse layer. The residual strain can be relax completely in the inverse layer when the amount of decreased indium content in the inverse layer is optimized. For most of cases, the final indium composition in the buffer layer was fixed and usually around 20% to 60%.
The indium content in the inverse layer can be decreased by the method mentioned earlier for the purpose of lowering strain. The amount of decreased indium content in the inverse layers was typically 10%~15% relative to the indium content of the buffer layer and depending on the indium composition in the buffer layer. For example, the indium content of the top layers is 35% when the final indium composition of the buffer layer is 45% to 50%. Here, we compared the effect of the residual strain in the growth behavior of QDs between two samples (i.e., sample A versus sample B). Sample A and sample B had the same indium content (i.e., 25%) in the top layer but different indium content in the buffer layer. The final indium compositions of the buffer layer in samples A and B are 35% and 30%, respectively. Because the indium composition in the top layer is 25%, the amounts of decreased indium content in the inverse layer with respect to the graded buffer layer for sample A and B are 10% and 5%, respectively. Different indium composition in the buffer layer also means that the relaxation rates of the buffer layer in sample A and sample B are different.
Fig. 5.2 shows AFM images of sample with 5x5 μm2 scanned area (Fig. 5.2(a)) and an
enlarge image (Fig 2(b), 2x2 μm2 scanned area) of area “a” in Fig. 5.2 (a). Fig. 5.3 shows AFM images of sample B. Fig. 5.3(a) shows AFM images with 5x5 μm2 scanned area. Fig.
5.3(b) is the AFM images of 2x2 μm2 taken on the positions ‘a’, as indicated in Fig. 5.3(a).
Fig. 5.3(c) shows surface height profile in Fig. 5.3(b).
The surface morphology of both samples reveals the modulation in the dot distribution.
The density of the dots modulates along the [110] direction. QDs were selectively grown on the surface. We observed that the selective growth was more obvious for sample B than sample A. One possible reason is that the non-uniform strain of the top layer caused the surface modulation. The origin of the non-uniform strain is not clear, but it is related to the formation of underlying non-uniform indium composition. When the inverse layer cannot relax the residual strain of the graded buffer layer, it results in the formation of the non-uniform indium composition in the inverse layer. This phenomenon could enhance the formation of non-uniform strain in the top layer. For sample B, the amount of decreased indium content in the inverse layer with respect to the buffer layer was insufficient. The inverse layer did not effectively relax residual strain in the metamorphic buffer and suffered from stronger compressive strain. Therefore, the modulation was more severe. Thus the distribution of selective growth of InAs QDs was sensitive to the modulation. That the amount of modulation depended on the amount of decreased indium composition had been reported by many research groups [70, 71]. Fig 5.3(b) shows QD size is inhomogeneous in the modulated period surface. Fig. 5.3 also shows InAs QDs are not easy to grow on the valley of the modulated surface.
(a)
(b)
FIG. 5.2. (a)AFM images with 5x5 μm2 scanned area. (b) the AFM images of 2x2 μm2 taken on the positions ‘a’, as indicated in Fig. (a).
a
(a)
(b)
a
(c)
Fig. 5.3. (a) AFM images with 5x5 μm2 scanned area. (b)The AFM images of 2x2 μm2 taken on the positions ‘a’, as indicated in (a). (c) surface height profile in (b).
Fig. 5.4(a) shows the AFM result of sample C with 5x5 μm2 scanned area. Fig. 5.4(b) is the enlarged AFM images of 2x2 μm2 scanned area taken from area ”a” in Fig. 5.4(a). The metamorphic structure of sample B is the same as sample A, but the growth rate in the In0.25Al0.75As inverse layer and In0.25Ga0.75As layer is different; 0.15 μm/hr in sample B versus 0.1 μm/hr in sample A. From Fig.5.4 (a) and (b), the period modulated along the [110]
direction are also observed, but the selective growth do not occur in this sample. The distribution of the QDs are uniformly grown on the surface.
(a)
(b)
Fig. 5.4. (a) AFM images with 5x5 μm2 VOF. (b)The AFM images of 2x2 μm2 taken on the positions ‘a’, as indicated in (a).
a
We took TEM images (1-10) with bright field cross-section in order to identify that the embedded QDs have selective growth. Figs. 5.5 (a)-(c) show the TEM images of sample B.
Fig. 5.5(b) and (c) were performed using higher magnification. Apparently, the TEM images reveal the selectively growth of QDs. In Fig. 5.5 (b), QDs do not appear in the embedded layer and surface. In Fig. 5.5 (c), QDs are found in both the embedded layer and the surface and they have shown the same distribution. It indicates that the modulated surface had existed in the inverse layer. The rest of the top layer remains the modulation behavior. However, the selective growth behavior of QDs identical in either embedded layers or on the surface.
Fig. 5.6 (a) and (b) show the TEM images of sample C. The TEM images indicate that there is no selective growth of QDs in sample C. Fig. 5.6 (b) shows the image with higher magnification. Clearly, the QDs distribution in the embedded layer is the same as the distribution on the surface. AFM and TEM images show the consistent results.
A high density of dislocations was found in the lower part of the graded buffer layer. The density of dislocations rapidly fell down in the upper part of the graded buffer layer. No dislocation is detected in the inverse step. TEM photographs reveal the perfect crystal in the inverse layer. It indicates that the buffer layer efficiently filtered the threading dislocation.
(a)
(b)
(c)
FIG. 5.5. (a) The TEM images for sample B. The image reveals the selective growth of InAs QDs. The embedded QDs layer still exist QDs. The QD distribution for embedded layer is the same as the surface. (b) the region without QDs under higher magnitude. The embedded QDs layer don’t exist QDs. (c) the region with QDs using higher magnification.
(a)
(b)
FIG. 5.6. (a) The TEM images for sample C. The image reveals QDs wiyhout selectively growth. The QDs distribution for embedded layer is same as the surface. (b) TEM image with higher magnification.
Fig. 5.7 shows photoluminescence (PL) results taken at the low temperature. The emission peak shift slightly between samples that the emission peak energy of sample B is higher than that of samples A and C. It indicates that the emission peak depended on the relaxation rate in the inverse layer. The high-energy emission peak is due to an incomplete relaxation in the inverse layer, and InAs QDs suffered from high strain in the underlying layer. PL results indicate that the relaxation rate in the metamorphic structure only affected the selective growth behavior of QDs.
Fig. 5.7. The low temperature photoluminescence measurement off sample A, B and C.
5.5 The Growth behavior of the InAs QDs with Different Growth Temperatures of the Buffer Layer
If metamorphic samples have the same structure and composition profile, the behavior of the period modulation should be inconsistent due to the various amount of residual strain in the buffer layer. The growth conditions of the buffer layer can affect its amount of residual
strain. One of the growth conditions is the growth temperature. In this subsection, we present how the growth temperature of the buffer layer affects the amount of the residual strain in the metamorphic structure.
Both samples B and D have the same structure and growth condition except the growth temperature of the buffer layer. For samples B and D, the growth temperature of the buffer layer is 380 and 450oC, respectively. The AFM results of sample D were shown in Fig.5.8 including an AFM image with 5x5 μm2 scanned area (Fig. 5.8(a)) and the profile of the surface height (Fig. 5.8(b)). The AFM images also show the selective growth when the growth temperature of the metamorphic graded buffer increased to 450oC. The profile of the surface height indicated that the QDs did not grow on the valley of the modulated surface. It also indicated that high growth temperature of the buffer layer could not improve the strain relaxation rate of the buffer layer when samples B and D have the same graded indium profile in the buffer layer.
Both samples A and E have the same structure and growth condition except their growth temperature of the buffer layer. For both samples A and E, the growth temperature of the buffer layer is 380oC and 330oC, respectively. Fig. 5.9 shows the AFM image of sample E with 5x5 μm2 scanned area. The result shows the selective growth of QDs appearing in sample E (growth temperature was 330oC). It means that lower growth temperature of the buffer layer can lower the relaxation rate of the strain. Although the indium composition profile of the metamorphic buffer is the same in both samples A and E, the relaxation rate of the strain in the buffer layer is low when the buffer was grown at 330oC. It means that higher residual strain in the buffer layer and need to increase the amount of decreased indium content in the inverse layer. From the PL measurement of sample E the optical single is very weak. It means that epilayers cannot crystallize at the growth temperature.
(a)
(b)
FIG. 5.8. (a) AFM images with 5x5 μm2 scanned area. (b) surface height profile.
FIG. 5.9. AFM images of sample with 5x5 μm2 scanned area. Result shows poor crystal quality.
5.6 Conclusion
The growth behavior of InAs QDs on the metamorphic buffer layer had been studied in this chapter. The AFM and TEM images show the selective growth of QDs on the InGaAs layer. The growth behavior was controlled by the amplitude of the modulation of the growth surface. In this study, we found that two factors affected the amplitude of the surface modulation in the inverse layer. One factor is the amount of decreased indium content in the inverse layer. Another is the growth temperature of the metamorphic buffer. An insufficient amount of decreased indium content in the inverse layer could not relax the residual strain in the buffer layer and resulted in the increase of the residual strain in the inverse layer. The
amounts of the residual strain in the inverse layer controlled the amplitude of the surface modulation of the inverse layer. Even when two samples have the same decreased amount of indium content in the inverse layer and the same indium graded profile of the buffer, the growth temperature of the metamorphic buffer can still affect the strain relaxation rate of the buffer. The relaxation rate controlled the amplitude of the surface modulation. The growth behavior of InAs QDs was strongly affected by this modulation change on the surface.
Chapter 6 Summary
In this dissertation, we have shown that the strain state of buried InAs quantum dots (QDs) could be probed using ion channeling technique. By using heavy ion as incoming particles, the angular scan curves revealed the lattice atomic displacement of InAs QDs. The strain state of InAs QDs was obtained from the lattice atomic displacement. As-grown samples showed the lattice of InAs QD along in-plan direction is the same as that of GaAs QD. Therefore, the strain state in this direction is compressive. The lattice of InAs QDs along growth direction is lager than that of GaAs QD from the channeling result. However we did not know whether the strain state of QDs along growth direction is tensile or compressive. To further explore the strain state, we determined the strain state by the emission peak of InAs QD and band gap theory. However, it is essential to quantity the relationship between the stain magnitude of buried InAs QDs and angular curves. Up to date, no measurements can quantify the magnitude of the strain. To quantity the relationship between the stain magnitude of buried InAs QDs and angular curves may be determined by methods of our experiment (i.e., ion channeling technique) and combining with computer simulation. Moreover, quantitative analysis of the strain is next step of further studies.
We also demonstrated the phenomenon of lasing switching of an InAs quantum dot laser using a two-section quantum dot laser. The status of lasing switching switched between the ground state transition at ~1.3 μm and the excited state transition at ~1.2 μm. It is known that 1.55 μm and 1.3 μm are two important transmission windows in telecommunication semiconductor lasers. It will be a powerful feature in laser industry if two wavelengths within 1.3 to 1.55 μm can be switched using a two-state switching laser. To achieve this goal, one possible approach is to grow InAs QDs on the metamorphic buffer with GaAs substrate. Our
study found that the growth condition and the indium composition of the metamorphic buffer affected the growth behavior of InAs QDs. To demonstrate that lasing switching can occur at a wavelength range of 1.3 μm to 1.55 μm, further studies are necessary, particularly in studying the structure and optical property of QDs.
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簡介(Vita)
姓名：王興燁 （Hsing-Yeh, Wang）
性別：男
出生年月日：民國五十九年八月三日 籍貫：台中市
學歷：
逢甲大學材料科學系學士（81.9~85.6）
逢甲大學材料科學研究所碩士（85.9~87.6）
國立交通大學電子研究所博士班（89.9~97,6）
經歷：
廣鎵光電，研發部工程師 (87.7~89.8)
博士論文題目：
砷化銦量子點之材料特性及雷射行為
InAs Quantum Dot：Material Characterization and Lasing Behavior
Publication List
[1] H. Y. Wang, H. Niu, C. H. Chen, and S. C. Wu, and C. P. Lee, “The Strain study of Buried Self-assembled InAs QDs using MeV Ion Channeling,” 2006 Materials Research Society Spring Meeting, San Francisco, USA.
[2] H. Y. Wang, C. P. Lee, H. Niu, C. H. Chen, and S. C. Wu, “Strain study of
self-assembled InAs quantum dots by ion channeling technique,” J. Appl. Phys. 100, 103502 (2006).
[3] H. Y. Wang,H. C. Cheng, S. D. Lin, and C. P. Lee, “Wavelength switching transition in quantum dot lasers,” Appl. Phys. Lett. 90, 081112 (2007).
[4] C. Y. Cheng, H. Niu, C. H. Chen, T. N. Yang, H. Y. Wang and C.P. Lee, “ Effect of proton irradiation on photoluminescence emission from self-assembled InAs/GaAs quantum dots,” Nucl. Instrum. Meth. B, in press (2007).
[5] H. Niu H, C. H. Chen, H. Y. Wang, S. C. Wu, C. P. Lee, “Ion-channeling studies of InAs/GaAs quantum dots” Nucl. Instrum. Meth. B 241, 470 (2005).