CHAPTER 9 CONCLUSION AND FUTURE WORK
9.2 F UTURE W ORK
9.2.1 a-IGZO TFTs
a-IGZO TFTs in this dissertation were fabricated at University of Michigan, Ann s at NCTU by using Self-aligned N+ region contact of a-IGZO TFTs as a platform to improve a-IGZO TFT performance. As widely known, higher oxygen vacancy makes a-IGZO film more conducting. We control the oxygen partial pressure during the sputtering of a-IGZO films. High oxygen partial pressure is processed first then low oxygen partial pressure is used to make an oxygen-vacancy-rich thin a-IGZO films.
Following, source/drain metal is deposited then using wet dipping to etch non-use oxygen-vacancy-rich a-IGZO film. This oxygen-vacancy-rich region supposes to act ctron rich area to form a good ohmic contact region. Finally, all TFTs will be made onto glass substrate to be transparent devices. The cross-sectional view and process flow are shown in Fig. 9-2.
Arbor during my extended internship. We are building up the processe
as N+ ele
Fig. 9-2 Proposed self-aligned N+ region at contact area
Recently, gate driver on array technology is a hot topic for the cost reduction in TFT-LCDs. However, traditional a-Si:H TFTs still have some issues such as
instability and lower mobility. Based on our previous results, we will further study temperature coefficient and width/length effects by modelling the a-IGZO TFTs. The models will then be generated for a-IGZO based devices for gate driver circuits.
In addition, CMOS-like inverter circuits have been demonstrated by using air-stable channel materials pentacene and a-IGZO. Operating voltage, output frequencies, and gain values will be further studied and optimized. These ambipolar TFTs open a potential way to fabricate high performance logic devices with mechanical flexibility and good reliability in air condition.
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Jou
ublication List
rnal Papers
1. Chiao-Shun Chuang, Jung-An Cheng, Yu-Jen Huang, Hsiao-Feng Chang, ional gate insulators” Appl. Phys. Lett., 93, 053305 (2008)
2. Chiao-Shun Chuang
Fang-Chung Chen and Han-Ping D. Shieh, “Organic thin-film transistors with color filtering funct
(I.F.: 3.596)
, Fang-Chung Chen and Han-Ping D. Shieh, “Organic thin-film transistors with reduced – photosensitivity”, Org. Electronics 8, 767 (2007). (I.F.: 3.879)
3. Chiao-Shun Chuang, Shu-Ting Tsai, Yung-Sheng Lin, Fang-Chung Chen and Han-Ping D. Shieh, “Photocurrent suppression of transparent organic thin film transistors”, Jpn. J. Appl. Phys., 46 L1197 (2007) (I.F.: 1.247)
4. Fang-Chung Chen, Chiao-Shun Chuang, Yung-Sheng Lin, Li-Jen Kung, Dong-Sian Chen, and Han-Ping D. Shieh, “Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics”, Org. Electronics 7, 435 (2006) (I.F.: 3.879)
International Conference Papers
a-IGZO TFTs1. Chiao-Shun Chuang, Tze-Ching Fung, Barry G. Mullins, Kenji Nomura, Toshio Kamiya, Han-Ping D. Shieh, Hideo Hosono and Jerzy Kanicki,
“Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays”, Society for Information Display 2008 (SID’08)
2. Tze-Ching Fung, Chiao-Shun Chuang, Charlene Chen, K Abe, H. Kumomi and Jerzy Kanicki, “2-D Numerical Simulation of High Performance Amorphous In-Ga-Zn-O TFTs”, AM-FPD 2008.
3. Tze-Ching Fung, Chiao-Shun Chuang, Barry G. Mullins, Kenji Nomura, Toshio Kamiya, Han-Ping D. Shieh, Hideo Hosono and Jerzy Kanicki,
“Photofield-Effect in Amorphous InGaZnO TFTs”, IMID/IDMC 2008.
(Distinguished paper award)
Pentacene TFTs
4. Chiao-Shun Chuang, Han-Ping D.
“Numerical Prediction of Effective
Shieh, Yang Yang, and Fang-Chung Chen Dielectric Constant in Organic Thin-film ith Nanocomposite Gate Insulator” International Display
Conference & Exhibition, (IDMC) (2005).
Transistors w Manufacturing
5. Chiao-Shun Chuang, Yung-Sheng Lin, Li-Jen Kung, Dong-Sian Chen, Fang-Chung Chen, and Han-Ping D. Shieh “Organic Thin-Film Transistors based on Nanocomposite Gate Insulators for High-current Driving Applications” International Display Workshops (IDW) (2005).
6. Chiao-Shun Chuang, Shu-Ting Tsai, Fang-Chung Chen, and Han-Ping D.
Shieh “Organic Thin-Film Transistors with reduced-photosensitivity”
International Display Workshops (IDW) (2006).
7. Chiao-Shun Chuang, Shu-Ting Tsai, Yung-Sheng Lin, Fang-Chung Chen, and Han-Ping D. Shieh “Transparent OTFTs with Color-Filtering Functional Gate Insulators” Society for Information Display 2007 (SID’07)
8. Yu-Jen Huang, Hsiao-Fen Chang, Shu-Ting Tsai, Chiao-Shun Chuang, Jung-An Cheng, Fang-Chung Chen and Han-Ping D. Shieh “Color Filtering Functional Organic Thim-Film Transistors” International Display Manufacturing Conference & Exhibition, (IDMC) (2007)
Yan-Chu Tsai, Shu-Ting Tsai, Chiao-Shun Chuang
9. , Jung-An Cheng,
hieh “Organic Thin-Film Transistors with cess Polymeric Gate Insulators” International Display Fang-Chung Chen and Han-Ping D. S
Novel Solution-Pro
Manufacturing Conference & Exhibition, (IDMC) (2007)
Domestic Conference Paper
1. Hsiao-Fen Chang, Chiao-Shun Chuang, and Fang-Chung Chen “Organic non-volatile memory devices with a polymer modification layer” 2008物理年 會 (壁報論文獎優勝)
Patents
1. 薄膜電晶體、畫素結構及液晶顯示面板， 莊喬舜、陳方中、謝漢萍 (友達 案號：AU0703009) (ROC Taiwan, USA Patent pending)
2. 有機半導體元件之接面結構及有機電晶體及其製造方法，陳方中、莊喬舜，
中華民國專利第I260785 號。
Vita
Name: Chiao-Shun (Patrick) Chuang 莊喬舜
Day of birth: September 8, 1974
Address: 高雄市苓雅區林南街 10 巷 11 號 6F E-mail: [email protected]
z Education
2003/09 – 2009/01 Ph.D., Institute of Electro-optical Engineering National Chiao Tung University, Hsinchu, Taiwan
1997/09 – 1999/06 Master, Department of Chemistry
ational Taiwan University, Taipei, Taiwan
2007/07 – 2008/01 Visiting scholar, Dept. of EECS
University of Michigan, Ann Arbor, USA.
N
1992/09 – 1997/06 Bachelor, Department of Chemistry
National Taiwan University, Taipei, Taiwan