Optimal Condition for Wafer Temperature Uniformity

The results presented above distinctly suggest that the wafer temperature uniformity can be improved by increasing the lamp-to-wafer separation distance and wafer translating speed for the wafer rotated at certain rate. Besides, the wafer heated by a single lamp is at a more uniform temperature. An attempt is made here to search for the optimal condition for the wafer temperature uniformity subjected to the constraints of the present experimental system. In this seach ω is tested at an interval of 10 rpm and Vd at an interval of 1 mm/s. The results indicate that at ω=

170 rpm and Vd = 17 mm/s for H= 90.0 mm the wafer temperature uniformity can be reduced by 85.7 % for the wafer heated by a single lamp. The data are shown in Fig.

4.67. Note that at this optimal condition △Tmax is as low as 0.5℃.

0.00 100.00 200.00 300.00 400.00 500.00 0.00

20.00 40.00 60.00 80.00 100.00 120.00 140.00 160.00

T(

^o

C)

t (s)

Fig. 4.1 Time variation of the wafer temperature measured at the geometric center of the wafer during the ramp-up period for the wafer heated by a single lamp for H= 90 mm, ω= 150 rpm, and Vd = 15 mm/s.

0.00 20.00 40.00 60.00 80.00 100.00 0.00

50.00 100.00 150.00 200.00 250.00

T(

^o

C)

t (s)

Fig. 4.2 Time variation of the wafer temperature measured at the geometric center of the wafer during the ramp-up period for the wafer heated by three lamps arranged as Fig. 2.2(b) for H= 60 mm, ω= 150 rpm, and Vd = 15 mm/s.

-10 -5 0 5 10 50

60

X(cm) T(^oC)

(a) t =20s，Tmean =55.6 & ∆T℃ max =3.6℃

-10 -5 0 5 10

70 80 90 100

X(cm) T(^oC)

(b) t =40s，Tmean = 85.1 & ∆T℃ max =7.1℃

-10 -5 0 5 10

100 110 120

X(cm) T(^oC)

(c) t = 60s，Tmean =122.2 & ∆T℃ max =7.2℃

-10 -5 0 5 10

120 130 140 150

X(cm) T(^oC)

(d) t =81s，Tmean = 133.3 & ∆T℃ max =8.6℃

Fig. 4.3 The measured wafer temperature at selected locations for H=30 mm,Vd= 0 mm/s and ω=0 rpm for the wafer heated by one lamp during the ramp-up period.

-10 -5 0 5 10

Fig. 4.4 The measured wafer temperature at selected locations for H=30 mm,Vd= 0 mm/s and ω=0 rpm for the wafer heated by three lamps during the ramp-up period.

-10 -5 0 5 10

Fig. 4.5 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 30 mm and Vd=0 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.6 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 60 mm and Vd=0 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.7 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 30 mm and Vd=5 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.8 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 60 mm and Vd=5 mm/s for the wafer heated by one lamp.

(

Fig. 4.9 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 30 mm and V =10 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.10 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 60 mm and V =10 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.11 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 30 mm and V =15 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.12 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 60 mm and V =15 mm/s for the wafer heated by one lamp.

-10 -5 0 5 10

Fig. 4.13 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 30 mm and V =0 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.14 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 60 mm and Vd=0 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.15 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm at H= 30 mm and Vd=5 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.16 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e) ω= 200 rpm at H= 60 mm and V =5 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.17 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e) ω= 200 rpm at H= 30 mm and V =10 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.18 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e) ω= 200 rpm at H= 60 mm and V =10 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.19 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e) ω= 200 rpm at H= 30 mm and V =15 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10

Fig. 4.20 The measured wafer temperature at selected locations for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e) ω= 200 rpm at H= 60 mm and V =15 mm/s for the wafer heated by three lamps.

-10 -5 0 5 10 120

130 140

X(cm) T(^oC)

(a) t =126s，Tmean = 135.5 & ∆T℃ max =6.5℃(Φ=0.0%)

-10 -5 0 5 10

120 130 140

X(cm) T(^oC)

(b) t =163s，Tmean = 134.1 & ∆T℃ max =5.8℃(Φ=10.8%)

-10 -5 0 5 10

120 130 140

X(cm) T(^oC)

(c) t =157s，Tmean = 134.5 & ∆T℃ max =5.6℃(Φ=13.8%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(d) t =161s，Tmean = 135.4 & ∆T℃ max =4.9℃(Φ=24.6%)

Fig. 4.21 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=0 rpm and H= 60 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10 130

140 150

X(cm) T(^oC)

(a) t =154s，Tmean = 136.4 & ∆T℃ max =5.4℃(Φ=16.9%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(b) t =184s，Tmean =136.2 & ∆T℃ max =4.1℃(Φ=36.9%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(c) t =184s，Tmean = 138.1 & ∆T℃ max =3.2℃(Φ=50.8%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(d) t =172s，Tmean = 137.3 & ∆T℃ max =2.7℃(Φ=58.5%)

Fig. 4.22 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=100 rpm and H= 60 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10

Fig. 4.23 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=200 rpm and H= 60 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10

Fig. 4.24 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=0 rpm and H= 30 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10

Fig. 4.25 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=100 rpm and H= 30 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10

Fig. 4.26 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=200 rpm and H= 30 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10 130

140

X(cm) T(^oC)

(a) t =324s，Tmean = 136.5 & ∆T℃ max =3.5℃(Φ=0.0%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(b) t =376s，Tmean = 137.2 & ∆T℃ max =3.2℃(Φ=8.6%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =416s，Tmean = 137.3 & ∆T℃ max =2.6℃(Φ=25.7%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(d) t =438s，Tmean = 137.7 & ∆T℃ max =2.2℃(Φ=37.1%)

Fig. 4.27 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=0 rpm and H= 90 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10 130

140 150

X(cm) T(^oC)

(a) t =406s，Tmean = 138.8 & ∆T℃ max =2.3℃(Φ=24.3%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(b) t =455s，Tmean = 138.3 & ∆T℃ max =2.0℃(Φ=42.9%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =450s，Tmean = 138.1 & ∆T℃ max =1.9℃(Φ=45.7%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(d) t =475s，Tmean = 139 & ∆T℃ max =1.1℃(Φ=68.6%)

Fig. 4.28 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=100 rpm and H= 90 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10 130

140

X(cm) T(^oC)

(a) t =1421s，Tmean = 136 & ∆T℃ max =4℃(Φ=-14.3%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(b) t =2000s，Tmean =136.6 & ∆T℃ max =3.6℃(Φ=-2.9%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =1900s，Tmean = 137.2 & ∆T℃ max =3.2℃(Φ=8.6%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(d) t =1962s，Tmean = 137.5 & ∆T℃ max =2.3℃(Φ=34.3%)

Fig. 4.29 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with the wafer heated by a single lamp at ω=200 rpm and H= 90 mm for the final wafer temperature set at 140℃.

-10 -5 0 5 10

Fig. 4.30 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=0 rpm and H= 60 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.31 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=100 rpm and H= 60 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.32 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=200 rpm and H= 60 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.33 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=0 rpm and H= 30 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.34 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=100 rpm and H= 30 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.35 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=200 rpm and H= 30 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.36 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=0 rpm and H= 90 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.37 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=100 rpm and H= 90 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.38 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=0 mm/s, (b) Vd=5 mm/s, (c) Vd=10 mm/s and (d) Vd=15 mm/s with three heating lamps at ω=200 rpm and H= 90 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =81s，Tmean = 133.3℃ & ΔTmax =8.6℃(Φ=0.0%)

-10 -5 0 5 10

120 130 140

X(cm) T(^oC)

(b) t =126s，Tmean = 135.5℃ & ΔTmax =6.5℃(Φ=24.4%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =324s，Tmean = 136.5℃ & ΔTmax =3.5℃(Φ=59.3%)

Fig. 4.39 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=0 rpm and Vd=0 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =82s，Tmean = 135 & ∆T℃ max =7℃(Φ=18.6%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(b) t =154s，Tmean = 136.4 & ∆T℃ max =5.4℃(Φ=33.2%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(c) t =406s，Tmean = 138.8 & ∆T℃ max =2.3℃(Φ=73.3%)

Fig. 4.40 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=100 rpm and Vd=0 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140

X(cm) T(^oC)

(a) t =94s，Tmean = 132.2 & ∆T℃ max =7.7℃(Φ=10.5%)

-10 -5 0 5 10

120 130 140 150

X(cm) T(^oC)

(b) t =181s，Tmean = 135.5 & ∆T℃ max =6.5℃(Φ=24.4%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =1421s，Tmean = 136 & ∆T℃ max =4℃(Φ=53.5%)

Fig. 4.41 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=200 rpm and Vd=0 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =81s，Tmean = 132.5 & ∆T℃ max =7.8℃(Φ=9.3%)

-10 -5 0 5 10

120 130 140

X(cm) T(^oC)

(b) t =163s，Tmean = 134.1 & ∆T℃ max =5.8℃(Φ=32.6%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =376s，Tmean = 137.2 & ∆T℃ max =3.2℃(Φ=62.8%)

Fig. 4.42 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=0 rpm and Vd=5 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =83s，Tmean = 134.4 & ∆T℃ max =6.4℃(Φ=25.6%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(b) t =184s，Tmean =136.2 & ∆T℃ max =4.1℃(Φ=52.3%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(c) t =455s，Tmean = 138.3 & ∆T℃ max =2.0℃(Φ=76.7%)

Fig. 4.43 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=100 rpm and Vd=5 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140

X(cm) T(^oC)

(a) t =99s，Tmean = 131.6 & ∆T℃ max =8.3℃(Φ=3.5%)

-10 -5 0 5 10

120 130 140

X(cm) T(^oC)

(b) t =238s，Tmean = 134.2 & ∆T℃ max =6.1℃(Φ=29.1%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =2000s，Tmean =136.6 & ∆T℃ max =3.6℃(Φ=58.1%)

Fig. 4.44 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=200 rpm and Vd=5 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =91s，Tmean = 133.2 & ∆T℃ max =7.4℃(Φ=14.0%)

-10 -5 0 5 10

120 130 140

X(cm) T(^oC)

(b) t =157s，Tmean = 134.5 & ∆T℃ max =5.6℃(Φ=34.9%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =416s，Tmean = 137.3 & ∆T℃ max =2.6℃(Φ=69.8%)

Fig. 4.45 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=0 rpm and Vd=10 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =91s，Tmean = 133.9 & ∆T℃ max =6.2℃(Φ=27.9%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(b) t =184s，Tmean = 138.1 & ∆T℃ max =3.2℃(Φ=62.8%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =450s，Tmean = 138.1 & ∆T℃ max =1.9℃(Φ=77.9%)

Fig. 4.46 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=100 rpm and Vd=10 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =104s，Tmean = 131 & ∆T℃ max =9.4℃(Φ=-9.3%)

-10 -5 0 5 10

120 130 140 150

X(cm) T(^oC)

(b) t =234s，Tmean = 134.6 & ∆T℃ max =5.7℃(Φ=33.7%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =1900s，Tmean = 137.2 & ∆T℃ max =3.2℃(Φ=62.8%)

Fig. 4.47 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=200 rpm and Vd=10 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140 150

X(cm) T(^oC)

(a) t =84s，Tmean = 133.5 & ∆T℃ max =6.9℃(Φ=19.8%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(b) t =161s，Tmean = 135.4 & ∆T℃ max =4.9℃(Φ=43.0%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =438s，Tmean = 137.7 & ∆T℃ max =2.2℃(Φ=74.4%)

Fig. 4.48 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=0 rpm and Vd=15 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 130

140

X(cm) T(^oC)

(a) t =84s，Tmean = 134.8 & ∆T℃ max =5℃(Φ=41.9%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(b) t =172s，Tmean = 137.3 & ∆T℃ max =2.7℃(Φ=68.6%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =475s，Tmean = 139 & ∆T℃ max =1.1℃(Φ=87.2%)

Fig. 4.49 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=100 rpm and Vd=15 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 120

130 140

X(cm) T(^oC)

(a) t =91s，Tmean = 132.4 & ∆T℃ max =7.4℃(Φ=14.0%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(b) t =328s，Tmean = 135.2 & ∆T℃ max =4.8℃(Φ=44.2%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(c) t =1352s，Tmean = 137.5 & ∆T℃ max =2.3℃(Φ=73.3%)

Fig. 4.50 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a single lamp at ω=200 rpm and Vd=15 mm/s for the final wafer temperature set at 140℃.

-10 -5 0 5 10 150160

170180 190200 210

X(cm) T(^oC)

(a) t = 40s，Tmean = 174.4 & ∆T℃ max =26℃(Φ=0.0%)

-10 -5 0 5 10

170 180 190 200

X(cm) T(^oC)

(b) t = 58s，Tmean = 186 & ∆T℃ max =13.8℃(Φ=46.9%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =97s，Tmean = 193.2 & ∆T℃ max =7.4℃(Φ=71.5%)

Fig. 4.51 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with the wafer heated by a three lamps at ω=0 rpm and Vd=0 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200 210

X(cm) T(^oC)

(a) t = 40s，Tmean = 180.4 & ∆T℃ max =19.7℃(Φ=24.2%)

-10 -5 0 5 10

180 190 200

X(cm) T(^oC)

(b) t = 58s，Tmean = 188.8 & ∆T℃ max =10.7℃(Φ=58.8%)

-10 -5 0 5 10

180 190 200

X(cm) T(^oC)

(c) t =97s，Tmean = 193.2 & ∆T℃ max =6.2℃(Φ=76.2%)

Fig. 4.52 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=100 rpm and Vd=0 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200

X(cm) T(^oC)

(a) t = 62s，Tmean = 177.9 & ∆T℃ max =21.9℃(Φ=15.8%)

-10 -5 0 5 10

170 180 190 200

X(cm) T(^oC)

(b) t = 60s，Tmean = 187.8 & ∆T℃ max =11.6℃(Φ=55.4%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =103s，Tmean = 192.8 & ∆T℃ max =7.8℃(Φ=70%)

Fig. 4.53 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=200 rpm and Vd=0 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200

X(cm) T(^oC)

(a) t = 44s，Tmean = 176.2 & ∆T℃ max =23.7℃(Φ=8.8%)

-10 -5 0 5 10

180 190 200

X(cm) T(^oC)

(b) t = 63s，Tmean = 188.8 & ∆T℃ max =11.2℃(Φ=56.9%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =88s，Tmean = 193.1 & ∆T℃ max =7.2℃(Φ=72.3%)

Fig. 4.54 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=0 rpm and Vd=5 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200 210

X(cm) T(^oC)

(a) t = 42s，Tmean = 181.9 & ∆T℃ max =18.7℃(Φ=28.1%)

-10 -5 0 5 10

180 190 200

X(cm) T(^oC)

(b) t = 62s，Tmean = 189.9 & ∆T℃ max =9.2℃(Φ=64.6%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =89s，Tmean = 194.9 & ∆T℃ max =5.9℃(Φ=77.3%)

Fig. 4.55 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=100 rpm and Vd=5 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200

X(cm) T(^oC)

(a) t = 41s，Tmean = 177.8 & ∆T℃ max =21.1℃(Φ=18.8%)

-10 -5 0 5 10

180 190 200

X(cm) T(^oC)

(b) t =67s，Tmean = 188.3 & ∆T℃ max =11.1℃(Φ=57.3%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =102s，Tmean = 194.1 & ∆T℃ max =7.1℃(Φ=72.7%)

Fig. 4.56 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=200 rpm and Vd=5 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200 210

X(cm) T(^oC)

(a) t = 44s，Tmean = 181.1 & ∆T℃ max =20℃(Φ=23.1%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(b) t = 66s，Tmean = 191.7 & ∆T℃ max =10.6℃(Φ=59.2%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =94s，Tmean = 193.8 & ∆T℃ max =6.8℃(Φ=73.8%)

Fig. 4.57 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=0 rpm and Vd=10 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200

X(cm) T(^oC)

(a) t = 45s，Tmean = 182.2 & ∆T℃ max =17.8℃(Φ=31.5%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(b) t = 66s，Tmean = 192.6 & ∆T℃ max =8.9℃(Φ=65.8%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =94s，Tmean = 194.7 & ∆T℃ max =5.4℃(Φ=79.2%)

Fig. 4.58 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=100 rpm and Vd=10 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200 210

X(cm) T(^oC)

(a) t = 44s，Tmean = 180.1 & ∆T℃ max =20.1℃(Φ=22.7%)

-10 -5 0 5 10

170 180 190 200

X(cm) T(^oC)

(b) t = 68s，Tmean = 187.3 & ∆T℃ max =10.9℃(Φ=58.1%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =104s，Tmean = 193.5 & ∆T℃ max =6.7℃(Φ=74.2%)

Fig. 4.59 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=6 mm, and (c) H=9 mm with three heating lamps at ω=200 rpm and Vd=10 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 160

170 180 190 200 210

X(cm) T(^oC)

(a) t = 41s，Tmean = 181.6 & ∆T℃ max =17.9℃(Φ=31.2%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(b) t = 62s，Tmean = 190.9 & ∆T℃ max =9.3℃(Φ=64.2%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =90s，Tmean = 194.9 & ∆T℃ max =6.1℃(Φ=76.5%)

Fig. 4.60 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=0 rpm and Vd=15 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 170

180 190 200

X(cm) T(^oC)

(a) t = 43s，Tmean = 182.2 & ∆T℃ max =15.9℃(Φ=38.8%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(b) t =62s，Tmean = 192.2 & ∆T℃ max =8.3℃(Φ=68.1%)

-10 -5 0 5 10

190 200

X(cm) T(^oC)

(c) t =89s，Tmean = 195 & ∆T℃ max =4.6℃(Φ=82.3%)

Fig. 4.61 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=100 rpm and Vd=15 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 170

180 190 200 210

X(cm) T(^oC)

(a) t = 44s，Tmean = 182.1 & ∆T℃ max =19℃(Φ=26.9%)

-10 -5 0 5 10

180 190 200

X(cm) T(^oC)

(b) t = 65s，Tmean = 189.2 & ∆T℃ max =10.3℃(Φ=60.4%)

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(c) t =101s，Tmean = 193.9 & ∆T℃ max =6.6℃(Φ=74.6%)

Fig. 4.62 The measured wafer temperature at selected locations during the ramp-up period for (a) H=30 mm, (b) H=60 mm, and (c) H=90 mm with three heating lamps at ω=200 rpm and Vd=15 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 50

60 70

X(cm) T(^oC)

(a) t = 15s，Tmean = 62 & ∆T℃ max =3.7℃

-10 -5 0 5 10

100 110 120

X(cm) T(^oC)

(b) t = 30s，Tmean = 106 & ∆T℃ max =6.3℃

-10 -5 0 5 10

130 140 150 160

X(cm) T(^oC)

(c) t = 45s，Tmean =144.6 & ∆T℃ max =8.4℃

-10 -5 0 5 10

180 190 200 210

X(cm) T(^oC)

(d) t = 66s，Tmean = 189.6 & ∆℃ Tmax =11℃

Fig. 4.63 The measured wafer temperature at selected locations for the wafer heated by three lamps arranged as Fig. 2.2(c) at ω= 0 rpm, Vd= 0 mm/s and H=

60 mm for the final wafer temperature set at 200℃.

-10 -5 0 5 10 60

70

X(cm) T(^oC)

(a) t = 15s，Tmean = 64.8 & ∆T℃ max =4.7℃

-10 -5 0 5 10

100 110 120 130

X(cm) T(^oC)

(b) t = 30s，Tmean = 112.7 & ∆T℃ max =8.52℃

-10 -5 0 5 10

140 150 160 170

X(cm) T(^oC)

(c) t = 45s，Tmean =154.5 & ∆T℃ max =11.6℃

-10 -5 0 5 10

170 180 190 200

X(cm) T(^oC)

(d) t = 58s，Tmean = 186 & ∆T℃ max =13.8℃

Fig. 4.64 The measured wafer temperature at selected locations for the wafer heated by three lamps arranged as Fig. 2.2(b) at ω= 0 rpm, Vd= 0 mm/s and H=

60 mm for the final wafer temperature set at 200℃.

(

Fig. 4.65 The measured wafer temperature at selected locations during the ramp-up period for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm with the wafer heated by three lamps arranged as Fig.

2.2(c) at H= 60 mm and Vd=0 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10

Fig. 4.66 The measured wafer temperature at selected locations during the ramp-up period for (a) ω= 0 rpm, (b) ω= 50 rpm, (c) ω= 100 rpm, (d) ω= 150 rpm and (e)ω= 200 rpm with the wafer heated by three lamps arranged as Fig.

2.2(b) at H= 60 mm and Vd=15 mm/s for the final wafer temperature set at 200℃.

-10 -5 0 5 10 130

140

X(cm) T(^oC)

(a) t =1348s，Tmean = 139.2℃ & ΔTmax =0.6℃(Φ=82.9%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(b) t =1362s，Tmean = 139.3℃ & ΔTmax =0.7℃(Φ=80.0%)

-10 -5 0 5 10

130 140 150

X(cm) T(^oC)

(c) t =1350s，Tmean = 139.4℃ & ΔTmax =0.5℃(Φ=85.7%)

-10 -5 0 5 10

130 140

X(cm) T(^oC)

(d) t =1320s，Tmean = 138.9℃ & ΔTmax =0.7℃(Φ=80.0%)

Fig.4.67 The measured wafer temperature at selected locations during the ramp-up period for (a) Vd=15 mm/s, (b) Vd=16 mm/s, (c) Vd=17 mm/s and (d) Vd=18 mm/s with a heating lamp at ω=170 rpm and H= 90mm for the final wafer temperature set at 140℃.

CHAPTER 5

在文檔中 利用晶圓旋轉和/或位移改善燈源加熱晶圓之等溫性研究 (頁 46-114)