Chapter 3: Enhancement of Uniformity by Utilizing a Triode Structure for
3.2 Simulations and Fabrication
3.2.5 The Optimum Structure in Simulations
Instead of the diode structures of field emission were shown in Fig. 3-12(a) and Fig.
3-12(b) without gate voltage bias, the triode structures of our field emission backlight units were Fig. 3-12(c) and Fig. 3-13(d). We could obviously observe the enhancement of uniformity by triode gated structure.
(a) (b)
(c) (d)
Figure 3-12 Simulations of electron dispersion of 100μm pattern spacing (a) with (c) without gate, and 200μm (b) with (d) without gate.
(a) (b)
Figure 3-13 The schematic profile of triode gated structure in our research.
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The schematic profile of triode grated was shown in Fig. 3-13(a), and the micro-viewpoint with contour lines of voltage was shown in Fig. 3-13(b). Following that, the electric field of our simulations was relatively high, so the turn-on field of this device by simulation only needed below 80V in our research.
After that, the schematic of electron dispersion without gate structure was shown in Fig.
3-14(a) and the central gated structure was shown in Fig. 3-14(b). These two kinds of field emission devices both owned poor uniformity comparatively, so we simulated the surrounding gate structure for improvement of uniformity.
Secondary, the issues of surrounding gate structures were structural fixed, except the gate to emitter length. That was because this was the major issue of all and the electron trajectory was sensitive to the gate to emitter length. And the gate to emitter length was controllable and variable easily by simple fabrication controlling.
(a)
(b)
Figure 3-14 The schematic of electron trajactory (a) without gate structure and (b) with central gate structure
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(a)
(b)
(c)
(d)
Figure 3-15 The simulations of different lengths between gate and emitter were (a) 1μm, (b) 1.5μm, (c) 2μm, and (d) 2.5μm
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As this result, Fig. 3-15(a)-(b) showed the pattern of 200μm pillar spacing with different length between gate and emitter. Because we could easily control this issue by fabrication step of gate lateral etching, we could simulate any value we wanted. We controlled the gate to emitter length from 1μm to 2.5μm, and then observed the conditions of the electron dispersion.
Finally, the optimal gate to emitter length was 2μm, not enough electron dispersion if length more than 2μm, over dispersion if length less than 2μm.
On the other hand, considering the emitting electron density by F-N theory as the Eq. can be approximated as [1.10]. And the Eq. (3-2) eliminated the other parameters except electric field.
(3-2) Therefore, we could simulate more correctly on current density, table 3-1 and Fig. 3-16 were the calculated current density of one emitter patter in our research.
Table 3-1
The calculated current density of one emitter patter
Parameters
Position E E2 exp(-1/E) ratio of J
Edge 25 625 0.96 6.67
Middle 15 225 0.94 2.35
Center 10 100 0.90 1.00
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Figure 3-16 The calculated current density of one emitter patter.
(a) (b)
Figure 3-17 The schematic figure with (a) 200μm pattern spacing and 80V gate voltage by our simulation with F-N theory, (b) 100μm pattern spacing.
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Figure 3-18 the F-N theory dominated this experiment, the 100μm would show the superior uniform dispersion than 200μm.
Fig. 3-17(a) was the schematic figure with 200μm pattern spacing and 80V gate voltage by our simulation with F-N theory, and Fig. 3-17(b) was the schematic figure with 100μm pattern spacing.
As a result, if the F-N theory was not the dominative issue in this experiment, the 200μm gate to emitter length was the optimum pattern spacing. And if the F-N theory dominated this experiment, the 100μm would show the superior uniform dispersion as Fig. 3-18.
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3.3 Experimental Procedures
Following the simulation of parameters we adjusted, the optimal device was shown as Fig. 3-19. The emitter area was a circle with 10μm diameter, the height of oxide and CNTs were both fixed as 1μm, and gate to emitter length was 2μm.
This triode structure was comparatively simple than other novel triode field emission devices, and only one mask step for patterning. Fig. 3-20 was the processing flow of our experiment, Fig. 3-20(a) showed first of all we prepared a Si (100) substrate after RCA clean.
In Fig. 3-20(b), 100nm Cr cathode electrode was coated by dual E-gun. In Fig. 3-20(c), 1000nm oxide was deposited by plasma enhance chemical vapor deposition (PE-CVD), Fig.
3-20(d) showed 100nm Cr gate electrode was coated by dual E-gun. In Fig. 3-20(e)-(g) showed the patterning of emitter circle and etch Cr gate and oxide insulator layer by wet etch.
Finally, the CNTs growing was showed in Fig. 3-20(h).
Figure 3-19 The schematic profile and scales of each parameter.
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(a) (b)
(c) (d)
(e) (f)
(g) (h)
Figure 3-20 The process of fabrication of triode field emission structure (a) preparing Si (100) substrate, (b) 100nm Cr electrode, (c) 1000nm SiO2, (d) Cr gate 100nm, (e) photo-resistance (PR) coating, (f) developing, (g) clear out the PR, and (h) CNTs growth.
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3.4 Results and Discussion
The top views of these devices in our research were showed in Fig. 3-21(a)-(b) by optical microscope, separately 100μm spacing array and 200μm spacing array. Firstly, we analyzed the profiles of one device by scanning electric microscope (SEM). In Fig. 3-22(a), the emitter was CNTs which have been grown 10min by recipes of Co-Ti/Al catalyst at 550℃ in chapter 2. And in Fig. 3-22(b), it was CNTs which have been grown 30min by recipes of Co-Ti/Al catalyst at 550℃.
We could observe the CNTs grown on Co-Ti/Al catalyst in our triode structure were high density and well aligned on the interface of the substrate no matter the growing time was 10min or 30min. Let focus on Fig. 3-22(b) after 30min growth, the height of CNTs was about 2.5μm and the gate to emission length was 2μm, the risk of short circuit arose obviously, as this result, even through how well the electric properties it was, we should give a priority to avoid short circuit, so following experiments were all growth CNTs only 10 min for controlling the length of the CNTs.
(a) (b)
Figure 3-21 The mask and top view of optical microscope (a) 200μm, (b)100μm.
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(a) (b)
Figure 3-22 The cross section images of our triode structure by SEM which CNTs growing time was (a) 10min and (b) 30min.
Figure 3-23 Comparing of diode pillar and this simple triode structure.
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Secondly, the luminescent image was shown as Fig. 3-23, which compared with the diode field emission backlight unit in our research in chapter 2. We could detect the luminescent image by triode field emission structure was more uniform than diode one by naked eyes, and need less current density without sacrificing the brightness. So we could obtain a conclusion which the triode field emission structure would improve the uniformity by large angle of electron dispersion.
Lastly, we made an experiment on electric field emission testing to accurately get the turn-on voltage and current density as Fig. 3-24(a), and the turn-on voltage defined by logarithm I-V plot as Fig. 3-24(b). In Fig. 3-24(a)-(b) shown, the current densities of 100μm and 200μm spacing were owned the same value about 800μA/cm2 and the turn-on voltages were 43V to 44V [ table 3-2 ], this result showed the screening-effect was totally avoided.
Table 3-2
The turn-on voltage and of the triode gate structure
Pattern spacing
Parameters 100μm Spacing 200μm Spacing
Turn-on voltage 43V 44V
Current density 803μA/cm2 791μA/cm2
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(a)
(b)
Figure 3-24 (a) The I-V plots of our triode structure with F-N plot inside (b) the logarithm I-V plot for detecting the turn-on voltage.
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3.4 Summary
We successfully manufactured an ultra simple triode gate structure with CNT emitters, which showed a superior uniformity in luminescent image compared with those with conventional diode structure. The results of simulations and luminescent images clearly indicated that this gate structure employed surrounding gate electrodes close to the emitters could cause larger angle of electron dispersion, and the emitted electrons traveling through the spacing between cathode and anode plates would give rise to a lighting region on the anode plate.
Because of the dispersion of electron beams, the luminescent images could be more uniform as compared with conventional diode or pillar-like CNT emitter structure which has a serious issue of beam dispersion, and the experimental luminescent images also showed to insure this issue.
In conclusion, the current density was about 800μA/cm2 and the turn-on gate voltage was 43V to 44V without screening-effect. The simple triode structure which only one step mask patterning could be applied to all kind of emitter materials, such as ZnO nano-rods or nano-particles instead of CNT emitters, therefore, the triode gate structure with a simple manufacturing process is potential for the application to enhance the uniformity on field emission backlight units.
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Chapter 4
Summary and Conclusions
4.1 Summary and Conclusions
The pillar-like CNTs grown with Co-Ti/Al (2nm-3nm/10nm) catalyst at 550℃ in thermal CVD exhibited superior characteristics of electric properties and macroscopic luminescent uniformity, as compared with other kinds of catalysts. This novel catalyst component provided better adhesion between CNTs and substrates, higher pillar height, and sharper pillar edge. And, we optimized the growth time and the pillar spacing at 550℃ in order to enhance uniformity and reliability. The optimum growth time improved the morphologies of CNT pillars with lower ID/IG ratio, and the optimum pillar spacing could avoid screening-effect with the best stability. Consequently, the optimal pillar-like CNT backlight unit of pillar spacing of 9 μm grown 90 minutes showed a good field emission characteristics and photo-luminescent images. The current density of this proposed pillar-like CNTs was as high as 1688 μA/cm2 at the electric field of 6 V/μm and the turn-on field was 3.5 V/μm; meanwhile, and the reliability was ultra stable since the degradation of initial current density was lower than 1%.
We successfully manufactured a simple triode gate structure with CNT emitters, which showed a superior uniformity in luminescent image compared with conventional diode structure and decreased the driving voltage. The results of the simulations and luminescent images clearly indicated that this gate structure with surrounding gate electrodes close to the emitters could cause larger divergence angle of electrons and the emitted electrons traveling
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through the spacing between cathode and anode plates would give rise to a more uniform lighting region on the anode plate. As compared of conventional diode or pillar-like CNT emitter structure, it is attributed to the spreading of electron beams. Finally, the optimum parameters of the triode field emission device were obtained according to the simulations, the gate-to-emitter length was 2 μm, and the vertical distance between gate and CNTs was 1 μm, and the current density was about 800 μA/cm2 and the turn-on gate voltage was 43 V to 44 V.
Additionally, the simple triode structure which employed only one step of mask patterning could be applied to all kinds of emitter materials, such as ZnO nano-rods or nano-particles;
therefore, the triode gate structure with a simple manufacturing process is potential in the applications of field emission backlight units with high uniformity.
In conclusions, the main concern in our research was uniformity and reliability of CNT emitters synthesized by thermal CVD at low temperatures. The reliability of CNT BLUs were improved by pillar-like CNTs, and the uniformity of CNT BLUs were improved by triode-typed structure. As a result, the CNT field emission arrays had an potential in backlight industry.
Even though the uniformity and reliability were quite improved in our researches, there were still some issues and parameters to be controlled or optimized by experiments.
Following are some further research we proposed for pillar-like CNT field emitter arrays with low temperature processes. One is designing a new pixel pattern with pillar-like CNT arrays in the diode configuration. Another is Growing the optimum pillar-like CNTs on the glass substrate actually at 550℃ and comparing with that on the silicon substrate. The other is trying to further improve the uniformity of height between each pillar-like CNT emitters. And Finally, we will try to package the field emission device with CNT emitters in vacuum environment, and testing the sealed devices.
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