Organic Vertical Transistors - Overviews of Organic Transistors

1.4. Overviews of Organic Transistors

1.4.2. Organic Vertical Transistors

An explosion of interests in flexible electronics made from organic semiconductors gave rise to extensive research on organic light-emitting diodes (OLED), organic field-effect transistors (OFET), organic chemical sensors, and organic solar cells. One of the key components of the flexible electronics is the organic FET, a horizontal device with source and drain electrodes on the same plane.

Its operating voltage usually over 25 V due to low carrier mobility and long channel length. The characteristics of organic FETs can be strengthened by increasing the mobility [83], utilizing a self-assemble monolayer as gate dielectrics [85] and reducing the channel lengths to the submicron [86]. Horizontal organic FETs with submicron channel lengths made by electron-beam lithography [87], nanoimprint lithography [88] and soft contact lamination [89] have been demonstrated. Vertical organic FETs, whose channel length was determined by the thickness of an insulating layer between source and drain, have been made by solid-state embossing [90], excimer laser [91] and photolithography [92]. However, the inherently low mobility as well as the incompatibility between conventional submicron lithography and

organic materials create great limitation on the device performance and the fabrication process for organic FET. The unique advantages of organic materials such as low-cost and large-area solution process are so far not fully explored for high-performance FET. Vertical non-field-effect transistors with multilayer structures give another route to circumvent the limits of both horizontal and vertical field-effect transistors. In vertical non-field-effect transistors, the channel length can be easily defined by the total thickness of the organic layers, and the current is modulated by a conductive layer embedded in the organic materials. Various device operating principles were proposed with different types of conductive layers such as a thin metal film[93], a strip-type metal film[94], a mesh gate electrode[95], and a porous conducting polymer network[96]. The remaining problems are the low current density, low on/off ratio as well as the complex fabrication process. One promising direction is to turn a vacuum tube triode into a solid-state device with current limited by the space-charge-limited current. Here, the vertical transistor is called “space-charge-limited transistor.” The operation mechanism of the SCLT can be understood as the quadratic space charge limited current between the emitter and the opening modulated by the grid potential.

As in vacuum tube, the potential at the center of the opening is a linear combination of grid and collector potential kVG + VC, the factor k depends on the device geometry and increases with the ratio between the opening diameter and the grid-collector distance. The SCLC between the emitter and the opening is therefore approximately





V_G V_C



²/ L³, where ɛ is the polymer dielectric constant and L is the emitter-grid distance. If the potential across the opening were uniform, the factor C would be the standard SCLC value of 9/8. The overall effect of non-uniform potential in our case can be absorbed into a numerical factor C. Because of the higher electric field the space between the grid and the collector does not limit the collector current,

therefore the emitter-opening current given above is actually the output current.

Table 1.4 shows the different types of vertical transistors and classified three types: (1) vertical organic field-effect transistor, VOFET (Y Yang et al.)[97], (2) hot carrier transistor, HCT (H. F. Meng et al.) [98] and metal-base transistor, MBT (I. A.

Hümmelge) [99] (3) space-charge limited transistor, SCLT (H. F. Meng et al.) [100]

and static induced transistor, SIT (Kudo et al.) [101]. Most of the devices are operated at low voltage (<5 V) with high output current density ( >10 mA/cm²). For the first type transistor (VOFET), the transistor can obtain high on/off current ratio due to the transistor is operated at normally-off mode. However, it is difficult to develop for large area because it needs to deposit thin charge injection layer (2.5 nm) between source electrode and organic layer for improving the gate controllability. Also, the uniformity of the thin charge injection layer is difficult to control. The operation mechanism of second type transistor (HCT or MBT) is similar to BJT, the output current have saturation region. However, the carriers have to tunnel from base metal to collector, therefore, the film thickness of base metal have to be well controlled. For the third type transistor (SCLT or SIT), it does not need to deposit ultra-thin base metal due to the porous base structure. However, the low on/off current ratio and high leakage current are needed to solve. In the chapter 6, we proposed a new structure of vertical transistor and successfully solved these two issues.

Table 1.4 Comparison of different types vertical transistors.

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Chapter 2. Effective Mobility Enhancement by Using

在文檔中低溫氧化物半導體及有機半導體之電晶體及感測器研究 (頁 38-53)