Table II Intrusion energy and adhesion energy between the pentacene film on
the AlN surface in various experimental conditions.
Table III Extracted parameters of conventional and patterned OTFTs.
Table VI Extracted parameters of OTFTs under various AlN aging
conditions.
Chapter 4 Conclusion
Pentacene patterning on the AlN dielectric surface and the aging effect on AlN surface in pentacene based OTFTs were developed in this thesis. A simple pentacene patterning process has been demonstrated using water dipping. The pentacene was completely lifted-off by water dipping on the area of AlN treated with O2 plasma. The AlN surface treated with O2 plasma becomes more polar after the O2 plasma treatment based on surface energy measurements. The polar surface energy enhanced the intrusion energy of water and helped lift-off the pentacene film on the O2 plasma treated AlN surface. The high intrusion energy associated with high polar surface energy of the O2 plasma treated AlN surface explained the water-removable pentacene patterning mechanism. The simple pentacene patterning process is compatible with conventional lithography and is applicable to future OTFT array processes.
The aging effect on the AlN gate dielectric in pentacene based OTFTs were investigated. The relationship between the carbon absorption and the electrical characteristics in pentacene based OTFTs was established. The OTFTs fabricated on the aged 14 days AlN surface with larger carbon absorption have large field effect mobility. The mobility was enhanced from 0.05 cm2/Vs to 0.67 cm2/Vs with the
limited aging time (14 days). The improved mobility was due to the carbon accumulation on the AlN surface, lowered the surface energy and increased the pentacene coverage in the first few layers. The electrical performance in pentacene based OTFTs is closely related to the carbon accumulation on the dielectric surface.
The carbon accumulation issues must be considered when developing process for preparing pentacene based OTFTs and other interface sensitive devices.
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