Chapter 4 Conclusions and Recommendations for Future Works
4.2 Recommendations for Future Works
1. More HRTEM images to evidence thickness variation and interfacial layer reaction.
2. More physical analyses are found with the Fluorine passivation effect in other high-K materials in Future.
3. The Fluorine passivation effect Dosage of Al2O3 IPD and HFO2 IPD can use in Flash menories or other devices.
4. The fluorine passivation of stacked-gate flash memories with IPD to study the device characteristics, including program/erase speed, retention time and charge.
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個人簡歷
姓名: 陸冠文 性別: 男
生日: 民國 65 年 2 月 28 日 出生地: 台灣省台北市
學歷:
國立海洋大學電機工程學系學士 (90.7—95,7) 國立交通大學電子工程研究所碩士 (95.7—98,7)
碩士論文題目:
氟鈍化效應在高介電常數複晶矽層間介電層特性及可靠度研究
Characteristics and Reliabilities Research of Fluorine Passivation Effect on Inter-Poly High-k Dielectrics