Recommendations for Future Works

In this thesis, we used PDA process and plasma technology to improve electric Characteristics on MIM (Ta/HfO2/Ta). We got better results than TiN/Al2O3//TiN structure. However, VCC values still is very high according to ITRS roadmap.

Besides, the mechanism of the variation of α and β values is unclear and more work needs to be done. After plasma treatment was processed, PDA 400°C in N2 was carried out for MIMmay be improved to electrics characteristics.

In the future, Pt can be chosen as buffer layer in MIM structure (Ta/HfO2/Ta) due to its inactive property. If all of the improvement on Ta could not become better results, maybe we should replace Ta with other metal material, such as Pt, Ir.

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個人簡歷

姓名 : 許修豪 性別 : 男

出生年月日 : 民國 68 年 3 月 14 日 籍貫 : 台灣省台南市

住址 : 台南市前鋒路 56 巷 16 號

學歷 :

國立彰化師範大學工業教育學系學士 (87.9–92.6) 國立交通大學電子工程研究所碩士 (93.9–95.6)

碩士論文題目 :

高介電常數材料二氧化鉿於金屬-絕緣體-金屬電容之研究

Investigation of High-K Material HfO2 On Metal-Insulator-Metal Capacitor