Band to Band tunneling Drain
4.2 Suggestion for the Future Work
to the valence band after UV illumination. The preliminary result shows the effect of traps states in the a-Si:H layer and the movement of Fermi level from the conduction band after UV illumination. Both the trap-assisted tunneling and band-to-band tunneling effects are considered and calibrated to study the influence of UV illumination on leakage current.
This study provides an insight into the effect of UV illumination and the mechanism to improve the switching characteristics of amorphous silicon thin-film transistors.
4.2 Suggestion for the Future Work
Listed below, some topics are suggested for further investigation. The source/drain schottky contact induced leakage current can also be further studied in the future. Moreover, the UV illumination with different wavelength on amorphous silicon thin-film transistors can be further studied.
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VITA
Name: Chung-Le Chen, 陳忠樂
Permanent address: No.96, Mingfong 16th St., Cianjhen City, Kaohsiung County 806, Taiwan
Degree and date to be conferred: Master of Institute of Electrics, Feb., 2008 Date of birth: January 8st, 1980
Place of birth: Kaohsiung, Taiwan
Collegiate institutions attended Degree Date of graduate Department of Electrical Engineering, National
Chung Cheng University, Chiayi, Taiwan BS June, 2004 Electrical Institute, National Chaio Tung
University, Hsinchu, Taiwan MS February, 2008
Master thesis title: Effect of UV Illumination on Physical Characteristics of a-Si:H Thin Film Transistors
Publication List:
1. Yiming Li, Jen-Chung Lou, Chung-Le Chen, Chih-Hong Hwang, and Shuoting Yan, “Effect of UV Illumination on Inverted-Staggered a-Si:H Thin Film Transistors,” Proceedings of the IEEE Conference on Electron Devices and Solid-State Circuits (IEEE-EDSSC 2007), Tainan, Dec. 20-22, 2007, vol. Ⅰ, pp. 225-229.
Appendix A : Vita