Retention Time (Second)
7.2 Suggestions for Future Works
Although the WOX RRAM shows the acceptable performance for memory application, the switching mechanism of WOX RRAM is still unclear. Therefore, study and finding the switching mechanism is more important thing in order to further improve the RRAM technology. The switching mechanism should be divided three parts. According to the WOX
RRAM could be controlled by both bipolar operation and unipolar operation, thus it may not only one face of the switching mechanism for WOX RRAM. What is the switching mechanism for bipolar operation, and what is the switching mechanism for unipolar operation should be considered. In last part, keep studying the top electrode effect for WOX RRAM is useful to further clear of the conduction and switching behaviors of the WOX RRAM. The end of the target of WOX RRAM is finding the very good performance that could be utilized as universal memory. At the present, the performance of the WOX RRAM is required to further improved.
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