The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)

(1)

ECS Solid State Letters, 1 (2) X1-X1 (2012)

X1

2162-8742/2012/1(2)/X1/1/$28.00©The Electrochemical Society

Publisher’s Note: The Effect of Silicon Oxide Based RRAM with

Tin Doping [Electrochem. Solid-State Lett., 15, H65 (2012)]

Kuan-Chang Chang,

a

_{Tsung-Ming Tsai,}

a

_{Ting-Chang Chang,}

b,c

_{Yong-En Syu,}

c

Kuo-Hsiao Liao,

a

_{Siang-Lan Chuang,}

a

_{Cheng-Hua Li,}

a

_{Der-Shin Gan,}

a

_{and Simon M. Sze}

c,d,e a_{Department of Materials and Optoelectronic Science,}b_{Center for Nanoscience & Nanotechnology, and}c_Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

d_{Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan} e_{Department of Electrical Engineering, Stanford University, Stanford, California 94305-4085, USA}

This article was published on December 28, 2011, with an

incom-plete list of authors on page H65. The article was corrected online on

June 15, 2012.

) unless CC License in place (see abstract).

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