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表面微結構對氮化鎵發光二極體光電特性之影響

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Figure 1.1  (a) Illustration of the nightly illumination of a gaslight with a thorium  oxide–soaked mantle
Figure 1.2    Bandgap energy of various materials for visible emission devices as a  function of their lattice constant.[5]
Figure 2.2  Intrinsic radiative transitions in semiconductors. (a) Band-to-band  transitions; (b) free-exciton annihilation; (c) recombination of exciton localized at  band-potential fluctuations.[1]
Figure 2.5    Behavior of light when traveling between two different mediums. Both  reflection and refraction occur
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