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應用於高可靠度奈米元件之內連線材料其成長與特性之研究

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Fig. 2  Formation of single crystal PtSi nanowire and PtSi/Si/PtSi  nano-heterostructures with varying length of the Si region
Fig. 3  In situ TEM images showing different heterostructures of PtSi/Si based on  different growth mechanisms due to oxide effect
Fig. 5 Simulation of oxide effect in kinetics of nano-silicide formation. (a)    Supercell  consisting of Si crystal covered with amorphous SiO 2

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