Accession number:20095112549575
Title: Dependence of breakdown voltage on drift length and linear doping gradients in SOI RESURF LDMOS devices
Authors: Yang, Shaoming (1); Tseng, Wenchin (1); Sheu, Gene (1) Author affiliation:(1) Department of Computer Science and
Information Engineering, Asia University, Taichung, Taiwan Corresponding author:Yang, S.
(rickyyang121@gmail.com)
Source title: ICEMI 2009 - Proceedings of 9th International Conference on Electronic Measurement and Instruments
Abbreviated source title:ICEMI - Proc. Int. Conf. Electron. Meas.
Instrum.
Monograph title:ICEMI 2009 - Proceedings of 9th International Conference on Electronic Measurement and Instruments
Issue date:2009
Publication year:2009 Pages:4594-4597
Article number:5274655 Language:English
ISBN-13:9781424438624
Document type:Conference article (CA)
Conference name:9th International Conference on Electronic Measurement and Instruments, ICEMI 2009
Conference date:August 16, 2009 - August 19, 2009 Conference location:Beijing, China
Conference code:78459
Publisher:IEEE Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States
Abstract:An optimal variation in lateral doping profiles is proposed for the drift region of lateral power devices in partial SOI technology in order to achieve breakdown voltage above 200V for both off-state and on-state operations. LDMOS structure incorporating the
proposed optimal doping profile are analyzed for their electrical characteristics and compared with conventional uniformly doped partial SOI and thin layer SOI by extensive 2D numerical simulations using MEDICI. The results indicate that the proposed optimal doping profile is in good agreement with the optimal doping gradient for JI
technology. The optimal doping profile can significantly improve the trade-off between breakdown voltage and specific on-resistance in comparison to uniformly doped P-SOI. ©2009 IEEE.
Number of references:9
Main heading:Doping (additives)
Controlled terms: Computer simulation - Electric breakdown - MOS devices - Optimization - Silicon on insulator technology
Uncontrolled terms:2-D numerical simulation - Breakdown voltage - Doping gradients - Doping profiles - Drift regions - Electrical
characteristic - Optimal doping - Optimal doping profile - Partial SOI - Power devices - RESURF LDMOS - Specific-on-resistance - Thin layers Classification code:701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 723.5 Computer Applications - 801 Chemistry - 921.5 Optimization Techniques
DOI:10.1109/ICEMI.2009.5274655 Database:Compendex
Compilation and indexing terms, Copyright 2009 Elsevier Inc.
