• 沒有找到結果。

PDF Journal of Materials Science & Technology - NJU

N/A
N/A
Protected

Academic year: 2023

Share "PDF Journal of Materials Science & Technology - NJU"

Copied!
6
0
0

加載中.... (立即查看全文)

全文

(1)

ContentslistsavailableatScienceDirect

Journal of Materials Science & Technology

jou rn a l h o m e p a g e :w w w . j m s t . o r g

Research Article

A flexible and high temperature tolerant strain sensor of La 0.7 Sr 0.3 MnO 3 /Mica

Min Guo

a

, Cheng Yang

a

, Dong Gao

a

, Qiang Li

a

, Aihua Zhang

a

, Jiajun Feng

c

, Hui Yang

a

, Ruiqiang Tao

a

, Zhen Fan

a

, Min Zeng

a

, Guofu Zhou

b,c

, Xubing Lu

a,∗

, J.- M. Liu

a,d

aInstituteforAdvancedMaterialsandGuangdongProvincialKeyLaboratoryofOpticalInformationMaterialsandTechnology,SouthChinaAcademyof AdvancedOptoelectronics,SouthChinaNormalUniversity,Guangzhou510006,China

bGuangdongProvincialKeyLaboratoryofOpticalInformationMaterialsandInstituteofElectronicPaperDisplays,SouthChinaAcademyofAdvanced Optoelectronics,SouthChinaNormalUniversity,Guangzhou510006,China

cNationalCenterforInternationalResearchonGreenOptoelectronics,SouthChinaNormalUniversity,Guangzhou510006,China

dLaboratoryofSolidStateMicrostructuresandInnovationCenterofAdvancedMicrostructures,NanjingUniversity,Nanjing210093,China

a r t i c l e i n f o

Articlehistory:

Received14August2019 Receivedinrevisedform 13September2019 Accepted8October2019 Availableonline8January2020

Keywords:

Flexiblesensor Mica La0.7Sr0.3MnO3

Hightemperature Multimodalsensing

a b s t r a c t

Flexiblesensorshavebeenwidelyinvestigatedduetotheirbroadapplicationprospectsinvariousflexible electronics.However,mostofthepresentlystudiedflexiblesensorsareonlysuitableforworkingat roomtemperature,andtheirapplicationsathighorlowtemperaturesarestillabigchallenge.Inthis work,wepresentamultimodalflexiblesensorbasedonfunctionaloxideLa0.7Sr0.3MnO3(LSMO)thin filmdepositedonmicasubstrate.Asastrainsensor,itshowsexcellentsensitivitytomechanicalbending andhighbendingdurability(upto3600cycles).Moreover,theLSMO/Micasensoralsoshowsasensitive responsetothemagneticfield,implyingitsmultimodalsensingability.Mostimportantly,itcanworkin awidetemperaturerangefromextremelowtemperaturedownto20Ktohightemperatureupto773K.

TheflexiblesensorbasedontheflexibleLSMO/micahetero-structureshowsgreatpotentialapplications forflexibleelectronicsusingatextremetemperatureenvironmentinthefuture.

©2020PublishedbyElsevierLtdonbehalfofTheeditorialofficeofJournalofMaterialsScience&

Technology.

1. Introduction

Flexibleandwearableelectronicproductshaveattractedenor- mousattentions due to theirpotential applicationsin artificial intelligencerobot,wearablehealthcaretechnologiesandportable personal electronics compared with conventional rigid silicon based electrons. The core components of building flexible and wearableelectronicdevicesarevariouskindsofflexiblesensors, suchasstresssensors[1–3],photoelectricsensors[4,5],magnetic fieldsensors[6,7]andtemperaturesensors[8,9].Flexiblestrain sensorhasbeenthemostwidelystudiedflexiblesensor, which canconvertvarious mechanicalsignals intoelectricalsignals in thesurroundingenvironment,indicatingpotentialapplicationin motiondetection[10,11],lifeactivitymonitoring[12,13],andarti- ficialintelligence[14,15].Zhongetal.reportedamultifunctional electronicskinspreparedbyalignedcarbonnanotubesinflexible polymercomposites[16].Thisstrainsensorexhibitshighaccuracy

Correspondingauthor.

E-mailaddress:[email protected](X.Lu).

inthemeasurementofbendingscale,lowenergyconsumption(<10

␮W)andexcellentbendingstability, demonstratingacapability forportablemotiondetectors.Parketal.developedhighlyflexi- ble,scalableandsensitivestrainsensorsbasedonsilvernanowire networkcompositesandpolydimethylsiloxane(PDMS)elastomer sandwichstructures[17].Theydemonstratedapracticalapplica- tionofthestrainsensorsbymakingglovesfixedwithfivestrain sensorsforfingermovementdetectionandvirtualcharactercontrol invirtualenvironments.Wangetal.presentedaflexiblevessel-like sensorconsistingofbraidedcottonhosesubstrate,carbonnano- tubes(SWCNTs)/ZnO@polyvinylidenefluoride(PVDF)arraysand flexiblePVDFfibrousmembrane[18]. Itcandetectphysicalsig- nalssuchastemperature,strainandfrequency,implyingpotential applicationsinwearableorportablephysicalsensing.

Theabovementionedflexiblestrainsensorsaremainlycom- posed of two parts. One is the active layer and the other is theflexiblesubstrate.Theactivelayermainlyconsistsofcarbon nanotubes [19,20], conductive polymers [21,22], nanomaterials [23,24],etc.TheflexiblesubstratemainlyconsistsofPDMS[25,26], polyethyleneterephthalate[13,27],PVDF[2,28]andotherpolymer materials[20,24].Amongthem,flexiblesubstratesaremainlypoly- https://doi.org/10.1016/j.jmst.2019.10.019

1005-0302/©2020PublishedbyElsevierLtdonbehalfofTheeditorialofficeofJournalofMaterialsScience&Technology.

(2)

M.Guoetal./JournalofMaterialsScience&Technology44(2020)42–47 43

merswithlowmeltingpoint(generallylessthan300C)whichcan notwithstandhightemperatureandbecomebrittleatlowtemper- ature.Theflexibleelectronicsreportedatpresentarenotsuitable forhightemperatureenvironment,whichlimitsitsapplicationin aerospace,metallurgicalindustry,undergroundenergyexploration andotherextremehightemperatureenvironments.

Inorder tofabricateflexible strainsensor forhightempera- tureapplications,our ideais to finda flexible substrate which canwithstandhightemperature.Mica(KAl2(Si3Al)O10(OH)2)isan inorganicmaterialwithlayeredstructure.Athinmicasheet(about 100␮m)exhibitsexcellentflexibilityandhightransmittanceinthe ultraviolet-visible-infraredlightrange[29].Itshighmeltingpoint (1150−1300K)enablesittowithstand700C hightemperature environment.Therefore itisbelieved tobeanexcellentflexible substratematerialforhightemperatureenvironment.

Inthiswork,weadoptfunctionaloxideLSMOthinfilmandhigh temperatureresistantflexiblesubstratemicatoconstructaflexible strainsensorwhichcanworkathightemperature.Althoughseveral functionoxideshavebeendepositedonMicasubstratewithhigh quality,suchasCoFe2O4[30],La0.67Sr0.33MnO3[31],VO2[32]and MoO2 [33].Noworkhasbeendoneforstrainsensorapplication especially workingathightemperature. In ourwork,wefabri- catedLSMO/Micahetero-structurebypulsedlaserdepositionfor flexiblestrainsensorapplication.Thisstrainsensorexhibitsgood flexibleperformancewithexcellentbendingproperties,outstand- ingresistanceenduranceatroomtemperature.Moreover,itcan workwellinawidetemperaturerangebetween20Kand773K.

Theresponse ofthesensor tothemagnetic fieldhasalsobeen studied,witharelativelylargemagnetoresistancechangeof32%

at20Kunder2Tmagneticfield,implyingitsmultimodalsensing ability.

2. Experimental 2.1. Preparation

Fig. 1(a) shows the detailed preparation processes of La0.7Sr0.3MnO3/Micahetero-structure. The polycrystallineLSMO filmsweredepositedonmica(001)substratethroughpulsedlaser depositionusingacommercialLa0.7Sr0.3MnO3 ceramictarget.A KrFexcimerlaser(=248nm),operatedat2Hzrepetitionrateand afluenceof∼2.91J/cm2wasusedtoablatethetarget.Agrowth temperatureof650Candanoxygenpartialpressureof10Pawere adoptedduringthegrowthoftheLSMOthinfilm.Afterdeposition, thefabricated sampleswere subsequently cooleddownwith a temperature decreasing rate of 1C/min in 1mbar of pure O2 ambient.Ptelectrodeswith100nmthicknessweregrownat10−4 Pa oxygenpressure on4corner oftheLSMOfilm bya shadow maskforelectricalmeasurement.

2.2. Characterization

CrystalstructuresoftheLSMOthinfilmswerecharacterizedby X-raydiffraction(XRD)usingaPANalyticalX’PertProdiffractome- terwithCu Kradiation. Surfacemorphologieswere measured byatomicforcemicroscope(AFM)(CypherAsylumResearchLtd.).

Cross-sectionalimageofMicawerecharacterizedbyfieldemis- sionscanningelectronmicroscopy(FE-SEM,ZEISS-Ultra55).The electricaltransportandmagnetoresistancepropertywereinves- tigatedbyVanderPauwmethodatatemperaturerangefrom20K to300Kusingaphysicalpropertymeasurementsystem(PPMS9, QuantumDesign).TheresistancevaluemeasuredbyVanderPauw methodwasdefinedbythesensedvoltagedividedbythesensing current.

Themechanicalbendingpropertieswerecharacterizedbyusing aself-madetest systemcomposedof aKeysightB2902A source meter,astepping-motorandcontrolsoftware.Thesampleresis- tance was measured by monitoring its voltage by applying a constantsensingcurrentwhen bendingthesensorbystepping- motor.

3. Resultanddiscussion

It is wellknown that mica hasa layeredstructure and the adjacentlayersareattractedbyVanderWaalsforcesinsteadof chemical bonds,soitis convenienttogain athin andflatmica sheet.Fig.1(b)showsatypicalSEMimageforacleavedmicasheet, indicatingalayeredstructureanda4.47␮mthickness.Thesurface morphologyofLSMOthinfilmonmicawascharacterizedbyAFM.

AsshowninFig.1(c),theLSMOthinfilmshowsasmoothsurface, andtherootofmeansquareisaround1.62nmovera5␮m×5␮m scanningarea.Fig.1(d)showstheXRD-2scanningpatternsof theLSMO/Mica hetero-structure,whichrevealsapolycrystalline structureoftheLSMOthinfilm.

Theresistancechangesunderdifferentbendingstateareinves- tigatedbyVanderPauwfour-pointmethod.Duringthetest,one endofthedeviceisfixedandtheotherendisdriventomovebya steppingmotor.Consequently,differentbendingstateswerereal- ized.Resistancesofthedeviceinbendingandunbendingstatesare definedasRbandR0,respectively.Thereal-timeresistancechange isdefinedasR=Rb-R0,thenthereal-timeresistancechangerate canbedefinedasR/R0=(Rb-R0)/R0.Fig.2(a)showstheresistance changerateofthedeviceasafunctionofbendingradius.Theinsetof Fig.2(a)showsaschematicdiagramoftheresistancemeasurement setupduringbendingstate,thesensingcurrentdirectionissameto thebendingdirection.TheR/R0showsanincreasemonotonically withthedecreaseofthebendingradius.Atthebendingradiusof 3mm,aR/R0of5.0%canbeobserved.Fig.2(b)showstheinstanta- neousresistancechangeratewithcontinuousbending/unbending cycles. Theinsetof Fig.2(b)shows a singlebending/unbending cycle,inwhichthebendingradiuschangeswiththesequenceof flat→10mm→8mm→5mm→8mm→10mm→flat.After6bend- ing/unbendingcycles, theresistancestateat eachflatstateand differentbendingstatesnearlyremainconstant,indicatinggood repeatabilityandstabilityofthedeviceduringthevariousbend- ingstates.Fig.2(c)depictsalongtimeresistancefatiguetestof thedeviceundervariousbending/unbendingcycles.Thetimefrom bendingtounbendingfor onecycleis 8s.It wasclearlyshown thattherewasnoperformancedeteriorationafter3600bending- unbendingcycles.After8hoflong-termbending/unbending,the changeinR/R0ofthedeviceonlyshowsareductionbylessthan 0.5%.TheR/R0valuesinthebeginning,intermediate,andending stagesareveryconsistentandrepeatable,asshownintheinsetof Fig.2(c),implyinggoodstabilityandreliabilityofthepresentstrain sensor.

Fig.3(a)showsthetemperaturedependenceofresistancefor the LSMO thin filmsat differentbending radius. As the bend- ingradiusdecreased,theresistanceofLSMOthinfilmincreased.

Moreover,thestrainsenseofthedevicecanbeobservedwithin awidetemperaturerangefrom100Kto300K.Fig.3(b)depicts thetime dependentresistanceoftheLSMO thinfilmat 20Kat differentbending states. For theresistances observed atdiffer- entbendingradius,allofthemnearlyremainconstantafter10h measurementat 20K,suggestinga goodstabilityoftheflexible strainsensorevenatextremelowtemperature.Thehightemper- aturetoleranceoftheflexiblestrainsensorhasalsobeenstudied.

Fig.3(c)showsthebendingradiusdependentresistancemeasured atdifferentelevatedtemperatures.Forthedeviceunderthesame bendingstate,theresistancedecreaseswiththeincreaseof the

(3)

Fig.1. (a)SchematicdiagramofpreparationprocessesofLa0.7Sr0.3MnO3/Micahetero-structure;(b)cross-sectionalSEMimageofthemicasheet;(c)AFMsurfacemorphology oftheLa0.7Sr0.3MnO3filmonmica;(d)XRDpatternofLa0.7Sr0.3MnO3/micahetero-structure.

Fig.2. (a)Resistancechanges(R/R0(%))upondifferentbendingradius(theinsetshowsaschematicdiagramoftheresistancemeasurementsetupduringbendingstate);(b) theinstantaneouschangeoftheresistanceunderthreedifferentbendingradius;(c)repetitivemeasurementoftheresistancechangesover8hbendingtimeunderbending radiusof8mm.thethreetopfiguresshowsometypicalcyclesattheinitial,intermediate,andendingstagesofthetestingprocess,respectively.

(4)

M.Guoetal./JournalofMaterialsScience&Technology44(2020)42–47 45

Fig.3.(a)Temperaturedependentresistancesunderdifferentbendingradiusofcurvature;(b)time-dependentresistancesunderdifferentbendingstatesat20K;(c) resistanceasafunctionofbendingradiusofcurvatureatdifferenthightemperatures;(d)temperature-dependentresistancechangesunderdifferentbendingstates.

ambienttemperature,showingtypicalsemiconductorconducting characteristic.Nevertheless,forthestrainsensoratthesameele- vatedtemperature,theresistanceincreaseswiththedecreaseof curvatureradius,showingthesamechangetendencyasthatat roomtemperature.ThepresentresultsprovethattheLSMO/Mica strainsensorcanworknotonlyatroomtemperaturebutalsoat hightemperaturesuptoatleast773K.Fig.3(d)showsthequan- titativevaluesofresistancechangingrate(R/R0)asafunction ofambienttemperaturesatdifferentcurvatureradius.Compared withroom temperature,the magnitudeof resistancechange is moreobviousathightemperature,whichindicatesthatthedevice is more sensitive to bending action at high temperature. The present LSMO/Mica strain sensors show working temperatures of 773K and 100K, which are much higher/lowerthan that of previouslyreportedflexiblestrainsensors[9,34],indicatingtheir greatapplicationpotentialsinthefieldofharshelectronicsinthe future.

Multimodalsensingwithasinglesensorwashighlydemanded infutureflexibleelectronics.ConsideringthatLSMOisawellknown materialwithmagnetoresistance(MR)effect,wealsocarriedout thestudyonthemagneticresistanceandmagneticsensingability ofLSMOthinfilmsinourwork.Fig.4(a)showsthetemperature dependentresistanceforthefilmin0Tand1Tmagneticfields.

NoticeableMReffectcanbeclearlyobserved.Theresistancemea- suredwith1Tmagneticfieldisclearlysmallerthanthatmeasured withoutmagneticfield, especially atlow temperature.Fig. 4(b) showsthemagneticfielddependentMR%forthefilmatdiffer- enttemperatures.TheMRchangesaregenerallydefinedasMR%= {[R(H,T)−R(0,T)]}/R(0,T)×100%,whereR(H,T)andR(0,T)arethe temperaturedependentresistancevaluesunderappliedfieldand zerofield,respectively.TheMReffectincreasedobviouslyasthe temperaturereducesfromroomtemperaturetolowtemperature,

whichisconsistentwithwhathasbeenreportedresults[35,36].

ThemaximumvalueofMRisabout32%undertheappliedfieldof2T measuredat20K.Fig.4(c)showsthemagneticresistanceofLSMO thinfilmwithdifferentbendingradiusat20K,whichindicatesthat clearMReffectcanbeobservedevenatbendingstates.Further- more,whenthetemperatureincreasesto300K,theMReffectstill remainsforbothflatandbendingstates.Thepresentresultsshown inFig.4implythattheLSMO/Micahetero-structurecanworkfor amultimodalsensortomeasurestrainandmagneticsignalwitha singledevice.

Basedontheaboveshownresults,wecarriedoutexperiments tomeasurethestrainandmagneticsignalbyusingthesamedevice structureofLSMO/Mica.TheLSMO/Micastrainsensorswerefirst pastedonglovestomonitorthemovementoffingerjoint.Fig.5(a) showsthetimedependentresistancechange(R/R0)ofthestrain sensor.Ineachbendingmotion,thefingersarebenttothesame positionandreleasedafterholdingfor2s.Itcanbeseenthatthe sensorisverysensitivetothebendingactionofthefinger,andthe resistancecanbequicklyrestoredtoitsoriginalvalueafterreleas- ingduringtherepeatedbending/releasingcycles.Forthemagnetic signalmeasurement,weadoptedacommercialNd2Fe14Bperma- nent magnet asmagnetic field source.The measurement setup wasschematicallyshownintheinsetofFig.5(b).Thesensorwas arrangedtomovetowardthemagnetforsomedistance,andthen movebacktotheoriginalposition.Duringthemovement,theresis- tancewasin-situmonitored.Thesameprocesswasrepeatedfor severaltimes,and thedistancemoving forwarddecreaseswith theincreaseofthecyclenumber.Thetimedependentresistance changeduringthemovingforward/movingbackwardcycleswas shown inFig.5(b). Itcanbeseen thatthesmallerthedistance betweenthesensorandthemagnet,thehigherthemagneticfield intensity,andthemoreobvioustheresistancechanges.Whenthe

(5)

Fig.4.(a)Temperaturedependenceoftheresistanceat0Tand1Tmagneticfield;(b)magneticfielddependentMR%atdifferenttemperaturesfortheLSMOthinfilm;

resistance-magneticfieldcharacteristicsofLSMOthinfilmsunderdifferentbendingradiusofcurvatureat20K(c)and300K(d).

Fig.5.(a)Resistancechangeofthesensorduringthefingerbending/unbendingcycles(theinsetshowstheactualphotographoftheLSMO/Micasensorfixedonfingers duringthebendingandunbendingstates);(b)timedependentMRchangeupondifferentmagneticfieldintensityordistancebetweenmagnetandsensor(theinsetisa schematicdiagramofthemeasurementsetupforthemagneticsignal).

distancebetweenthesensorandthemagnetis1mm,theresistance changeratecan reach2.5%,indicating a clearmagneticsensing ability.

4. Conclusion

Insummary,wehavefabricatedaflexiblesensorcomposedof functionaloxideLSMOdepositedonflexiblemicasubstrate.Asin- gleLSMO/Micasensorshowsmultimodalsensingabilitytodetect strainaswellasmagneticsignals.Asastrainsensor,atthebend- ingradiusof3mm,aR/R0of5.0%canbeobserved,indicatinga goodsensitivity.After3600bending/unbendingcycles,thechange inR/R0ofthedeviceonlyshowsareductionbylessthan0.5%,

indicatingexcellent endurability.Asamagnetic sensor,amaxi- mumMRchangeof32%canbeobservedundertheappliedfield of2Tmeasuredat20K.Mostimportantly,theLSMO/Micaflexi- blesensorcanworkinawidetemperaturerangebetween20K and773K,demonstratingitsgreatapplicationpotentialinextreme harshenvironments.

Acknowledgements

This work was supported financially by the National Natu- ralScienceFoundation ofChina(No.51872099),theProjectfor GuangdongProvinceUniversitiesandCollegesPearlRiverScholar Funded Scheme (2016), the Guangdong Innovative Research

(6)

M.Guoetal./JournalofMaterialsScience&Technology44(2020)42–47 47

Team Program (No. 2013C102), the Guangdong Provincial Key Laboratory of Optical Information Materials and Technology (No.2017B030301007)andScienceand TechnologyProgramof Guangzhou(No.2019050001).

References

[1]F.A.Khan,C.M.Ajmal,S.Bae,S.Seo,H.Moon,S.Baik,Small14(2018),1800549.

[2]Y.Lee,J.Park,S.Cho,Y.E.Shin,H.Lee,J.Kim,J.Myoung,S.Cho,S.Kang,C.

Baig,H.Ko,ACSNano12(2018)4045–4054.

[3]H.Liu,Z.Zhang,J.Ge,X.Lin,X.Ni,H.Yang,L.Yang,J.Mater.Sci.Technol.35 (2019)176–180.

[4]F.Zhang,C.A.Di,N.Berdunov,Y.Hu,Y.Hu,X.Gao,Q.Meng,H.Sirringhaus,D.

Zhu,Adv.Mater.25(2013)1401–1407.

[5]B.Zhu,H.Wang,Y.Liu,D.Qi,Z.Liu,H.Wang,J.Yu,M.Sherburne,Z.Wang,X.

Chen,Adv.Mater.28(2016)1559–1566.

[6]G.S.Ca ˜nónBermúdez,H.Fuchs,L.Bischoff,J.Fassbender,D.Makarov,Nat.

Electron.1(2018)589–595.

[7]Z.Wang,X.Wang,M.Li,Y.Gao,Z.Hu,T.Nan,X.Liang,H.Chen,J.Yang,S.

Cash,N.X.Sun,Adv.Mater.28(2016)9370–9377.

[8]B.W.An,S.Heo,S.Ji,F.Bien,J.U.Park,Nat.Commun.9(2018)2458.

[9]J.H.Oh,S.Y.Hong,H.Park,S.W.Jin,Y.R.Jeong,S.Y.Oh,J.Yun,H.Lee,J.W.Kim, J.S.Ha,ACSAppl.Mater.Interfaces10(2018)7263–7270.

[10]G.Ge,Y.Zhang,J.Shao,W.Wang,W.Si,W.Huang,X.Dong,Adv.Funct.Mater.

28(2018),1802576.

[11]S.Park,S.Ahn,J.Sun,D.Bhatia,D.Choi,K.S.Yang,J.Bae,J.J.Park,Adv.Funct.

Mater.29(2019),1808369.

[12]T.Q.Trung,N.E.Lee,Adv.Mater.28(2016)4338–4372.

[13]C.Pang,J.H.Koo,A.Nguyen,J.M.Caves,M.-G.Kim,A.Chortos,K.Kim,P.J.

Wang,J.B.H.Tok,Z.Bao,Adv.Mater.27(2015)634–640.

[14]C.Yan,J.Wang,W.Kang,M.Cui,X.Wang,C.Y.Foo,K.J.Chee,P.S.Lee,Adv.

Mater.26(2014)2022–2027.

[15]M.Amjadi,A.Pichitpajongkit,S.Lee,S.Ryu,I.Park,ACSNano8(2014) 5154–5163.

[16]H.Zhu,X.Wang,J.Liang,H.Lv,H.Tong,L.Ma,Y.Hu,G.Zhu,T.Zhang,Z.Tie,Z.

Liu,Q.Li,L.Chen,J.Liu,Z.Jin,Adv.Funct.Mater.27(2017),1606604.

[17]X.Xiao,L.Yuan,J.Zhong,T.Ding,Y.Liu,Z.Cai,Y.Rong,H.Han,J.Zhou,Z.L.

Wang,Adv.Mater.23(2011)5440–5444.

[18]W.Zhang,C.Z.Hou,Y.G.Li,Q.H.Zhang,H.Z.Wang,Nanascale9(2017) 17821–17828.

[19]G.Cai,J.Wang,K.Qian,J.Chen,S.Li,P.S.Lee,Adv.Sci.4(2017),1600190.

[20]S.Pyo,J.Choi,J.Kim,Adv.Electron.Mater.5(2019),1800737.

[21]H.Wu,Q.Liu,W.Du,C.Li,G.Shi,ACSAppl.Mater.Interfaces10(2018) 3895–3901.

[22]X.Wu,Y.Han,X.Zhang,C.Lu,ACSAppl.Mater.Interfaces8(2016) 9936–9945.

[23]Y.Lee,S.Y.Min,T.S.Kim,S.H.Jeong,J.Y.Won,H.Kim,W.Xu,J.K.Jeong,T.W.

Lee,Adv.Mater.28(2016)9109–9116.

[24]Y.Y.Yu,C.H.Chen,C.C.Chueh,C.Y.Chiang,J.H.Hsieh,C.P.Chen,W.C.Chen, ACSAppl.Mater.Interfaces9(2017)27853–27862.

[25]B.Wang,T.Shi,Y.Zhang,C.Chen,Q.Li,Y.Fan,J.Mater.Chem.C6(2018) 6423–6428.

[26]X.Gao,M.Zheng,X.Yan,J.Fu,M.Zhu,Y.Hou,J.Mater.Chem.C7(2019) 961–967.

[27]X.Ren,K.Pei,B.Peng,Z.Zhang,Z.Wang,X.Wang,P.K.Chan,Adv.Mater.28 (2016)4832–4838.

[28]W.Zhang,C.Y.Hou,Y.H.Zhang,H.Z.Wang,Nanascale9(2017)17821–17828.

[29]Y.H.Chu,NPJQuantumMater.2(2017)67.

[30]H.J.Liu,C.K.Wang,D.Su,T.Amrillah,Y.H.Hsieh,K.H.Wu,Y.C.Chen,J.Y.Juang, L.M.Eng,S.U.Jen,Y.H.Chu,ACSAppl.Mater.Interfaces9(2017)7297–7304.

[31]J.Huang,H.Wang,X.Sun,X.Zhang,H.Wang,ACSAppl.Mater.Interfaces10 (2018)42698–42705.

[32]C.I.Li,J.C.Lin,H.J.Liu,M.W.Chu,H.W.Chen,C.H.Ma,C.Y.Tsai,H.W.Huang, H.J.Lin,H.L.Liu,P.W.Chiu,Y.H.Chu,Chem.Mater.28(2016)3914–3919.

[33]C.H.Ma,J.C.Lin,H.J.Liu,T.H.Do,Y.M.Zhu,T.D.Ha,Q.Zhan,J.Y.Juang,Q.He,E.

Arenholz,P.W.Chiu,Y.H.Chu,Appl.Phys.Lett.108(2016),253104.

[34]N.T.Tien,S.Jeon,D.I.Kim,T.Q.Trung,M.Jang,B.U.Hwang,K.E.Byun,J.Bae,E.

Lee,J.B.Tok,Z.Bao,N.E.Lee,J.J.Park,Adv.Mater.26(2014)796–804.

[35]G.Ren,S.Yuan,Z.Tian,ThinSolidFilms517(2009)3748–3751.

[36]S.Issei,K.Takeshi,Jpn.J.Appl.Phys.40(2001)586–591.

參考文獻

相關文件

避孕貼片變成植物人 一名才30出頭的年輕女子李小姐沒有任何高血壓、高血脂病史, 甚至在去年任職公司的健檢報告中,血壓114/72,膽固醇138,三 酸甘油脂102,血糖飯前90,都是正常值,怎麼會突然腦血栓,就 不醒人事而變成植物人。家屬強烈懷疑正跟她在使用的避孕貼片「以 芙」EVRA有關,因為這款避孕貼片在國外已經有數十人用了之後引

Substitution of A- and/or B-sites by other elements in BFO has been extensively adopted with Journal of Physics D: Applied Physics Room temperature multiferroic and