2008.08~2008.11
在此計畫的第一階段，我們已經建立了一套可用在極紫外光區段的光阻與薄膜 nkt 量測的技術平台，其中包括了一台自製的反射計，其解析度可與其他國際性的實 驗室相比，如美國的 ALS(advance light source)或是日本的 New SUBARU。因為目前 沒有可用在處理極紫外光反射率資訊的商業軟體，我們也發展一套作為曲線近似 nkt 量測結果之模擬軟體。在圖三中顯示一片基準膜的量測結果，可看出此結果相當接 近於另外二家國際性的實驗室所量測得的結果，此結果已經被一家國際性的光阻製 造公司所肯定。
In the first stage of this project, we have established a technology platform for nkt measurement of the resist and thin film in the EUV region. This achievements include a home-made reflectometer with a resolution comparable with the international laboratories such as ALS (advance light source) at USA or New SUBARU at Japan. Since there is no commercially available software for processing EUV reflectivity data, we also develop a
The measurement results of a benchmark film (Fig.3) indicate that the results are quite close to that measured by other two international laboratories. This result has been recognized by an international resist company.
2008.12~2009.05
在第一年計畫中，我們已根據計畫目標設計並建造一配備四極質譜儀與雙離子
腔之超高真空實驗系統光阻釋氣評估系統。藉由該全新的檢測方法，不但證明 F+釋
氣對光阻性質的重要性，同時也是世界上第一次發現的絕對測量光吸收與總離子釋 氣率的線性關係，以及第一次直接測量曝光動力速率 Dill’s C 參數。此光化學的動態 量測結果對於 EUV 新光阻的研發極具價值。
此外，本計畫也成功建立一技術平台以量測光阻與薄膜材料在 EUV 波段的折射 係數(n)，消散係數(k)與厚度(t)。該量測平台的解析度(0.0005o)不但符合原計畫目標，
也有非常不錯的再現性(1.080.11)。特別是相同試片的分析結果與美國先進光源 (ALS)的量測結果有極高的一致性，顯示本計畫所建立的 EUV 波段薄膜光學性質量 測平台已具國際水準。
而在矽基窄頻寬之 EUV 光感測器研發中，本計畫嘗試藉由選擇適當的金屬作為閘 極同時提供濾波功能，成功地以金屬-氧化層-半導體(MOS)結構來偵測特定頻段的波 長。此元件不但結構簡單，且可和現今的積體電路製程整合。
In the first year of the project, we have designed and constructed an evaluation station equipped with QMS (quadruple mass spectrometer) and double-ion chamber for both neutral/ionic outgassing measurements. With the novel measurement scheme, we found the first time that the F+ outgassing is proportional to the F photoabsorption of the resist under EUV irradiating. The exposure kinetic rate constants, Dill’s C parameters, of the total ion, F+, and CH3+ outgassing were also determined directly. To our knowledge, this is also the first direct measurement to determine the Dill’s C parameters. The kinetic measurement results are very precious for new resist development.
A complete and integrated nkt measurement environment @EUV has been established in this project. The system not only revealed adequate angle resolution and measurement reproductivity, its measurement results is also well coherent with those taken at ALS (Berkeley, USA). These results indicate that the established technical platform could be adapted as an international benchmark for domestic industry.
In the research of EUV detector, this work attempt using appropriate gate metal as a filter, and successively modulate the MOS (metal-oxide- semiconductor) tunneling diode for detecting specific range of light. This MOS device is easily to be fabricated, and can be easily integrated with current integrated circuit compared with conventional devices.
2009.08~2009.11
在矽基窄頻寬之 EUV 光感測器研發中，本計畫嘗試藉由選擇適當的金屬作為閘極 同時提供濾波功能，成功地以金屬-氧化層-半導體(MOS)結構來偵測特定頻段的波 長。此元件不但結構簡單，且可和現今的積體電路製程整合。
至於在非揮發性記憶體 EUV 輻射損傷的研究結果發現，高能量的 EUV 光源可能對 電子元件產生破壞，但藉由適當的元件結構與材料設計，(例如奈米晶粒(NC)非揮發 性記憶體) 則可提供良好的 EUV 輻射抵抗能力，此研究成果對於未來在極紫外光微 影製程下的元件設計提供極有價值應用基礎。
Due to the broad-band absorption of Si with the cut-off wavelength of ~1.1m, the narrow band detection is difficult for Si-based photodetectors. This work use appropriate gate metal as a filter, and successively modulate the MOS (metal-oxide-semiconductor) tunneling diode for detecting specific range of light. The MOS structure has a much simple process without dopant diffusion or implantation as compared with p-n junction.
The MOS EUV photodetector also can be easily fabricated with current semiconductor technology.
The experimental results also indicate that the high-energy EUV photons will damage the electronic devices. However, the device performance can be successively preserved via adequate design of the device structure and material. The results provide a precious basis for the device design for EUVL fabrication.
2009.12~2010.05
在過去的兩年中，本團隊致力於離子物質的釋氣研究，也提出 EUV 光化學的曝 光動力學機制，並發展出 EUV 反射儀法用來評估薄膜樣品的穩定及完整性。在台積 電的 JDP 中，確認某些光阻會有高質量的釋氣碎片，這是 TSMC 與 IMEC 合作成果 中未被鑑定出來的。當在研究 TSMC 及 NCI 的創新含矽材料時，我們觀測到材質表 面會因照光而改變其疏水性質。這個分項的基礎研究成果進而轉換成工業應用實例。
在極紫外光輻射對先進非揮發性記憶體及高介電常數介電質的影響方面，本次 研究針對先進的 TFT-SONOS、多閘極氮化鈦(TiN)奈米晶粒非揮發性記憶體進行輻 射傷害及特性變化的研究。SONOS NVM 元件結構為 SiO2/Si3N4/SiO2，NC NVM 元 件結構為 SiO2/ TiN+Al2O3/Al2O3，結果顯示 NC 結構相較於 SONOS 結構擁有良好的 EUV 輻射抵抗能力。在高介電常數介電質的部份，研究中則發現 SiO2的抗 EUV 輻 射能力不錯。這些研究的新發現，將有助於提供下世代電子元件設計的一個好的方 向。
This work has focused on studying ionic outgassing in the past two years. We proposed the exposure kinetics of EUV photochemistry, and developed the EUV reflectometer method to determine the integrity of thin-films samples, as publications listed in item (2). In the TSMC JDP, we identified ionic outgassing at massive molecular weight, which had not been reported by IMEC; while checking innovative silicon-containing compounds provided by TSMC and NCI, we found a change in surface
hydrophilic properties by EUV irradiation. The fundamental study of this sub-project on ionic outgassing turns into industrial applications.
In the study of effect of EUV radiation on advanced non-volatile memories and high dielectric constant dielectrics. Two advanced NVM structures, thin film transistor (TFT)-silicon-oxide-nitride-oxide-silicon (SONOS) and multi-gate TiN nano-crystal (NC) are used to study the variation of memory characteristics after EUV exposure. According to the experimental results, NC NVM exhibits much better EUV radiation tolerance than SONOS NVM. On the other hand, the oxide treated as high dielectric constant dielectrics was found to exhibit the best EUV resistance. These findings could be a good guide for the design of next generation devices.
2010.06~2010.11
在第二年計畫中，我們已根據計畫目標建立一配備四極質譜儀之光阻釋氣評估 系統與分析技術。該全新的檢測方法第一次發現絕對測量光吸收與總離子釋氣率的 線性關係，以及第一次直接測量曝光動力速率 Dill’s C 參數。此光化學的動態量測結 果對於 EUV 新光阻的研發極具價值。
本計畫也成功建立極紫外光干涉式曝光平台，以產生奈米級 1D 與 2D 干涉圖形。
雖然歐美日等國均已有相近設備技術(韓國尚無)，但我國半導體業卻具有主導商業量 產技術方向的實力，因此本技術平台的建立極有助於台灣新微影技術與材料的研 發。此外，目前尚無有關奈米元件的 EUV 輻射損傷的研究報告。本計畫針對極紫外 光輻射損傷的研究結果，對於未來 EUVL 實際應用於量產先進非揮發性記憶體或邏 輯元件，極具有參考價值。
In this project, we have designed and constructed an evaluation station equipped with QMS (quadruple mass spectrometer) for both neutral/ionic outgassing measurements.
With the novel measurement scheme, we found the first time that the F+ outgassing is proportional to the F photoabsorption of the resist under EUV irradiating. The exposure kinetic rate constants and Dill’s C parameters were also determined directly. To our knowledge, this is also the first direct measurement to determine the Dill’s C parameters.
The kinetic measurement results are very precious for new resist development.
This project also successively establishes a platform of EUV interference lithography (IL) to generate 1D and 2 D nano-pattern through the home-made transmission grating mask. Although Europe, Japan and US (not Korea) have similar technology already, But Taiwan’s semiconductor industry have the power to dominate the developing direction of mass-production technology. The established EUV IL platform will benefit the development of new resist materials and new pattern technology in Taiwan. Beside, there are very rare reports about EUV radiation damage so far. The results obtained in this project indicate that high-energy EUV photon will damage most semiconductor materials.
However, the radiation-damage resistance of the nano devices can be effectively improved by optimizing materials and structure design. The results are very valuable for the EUVL mass-production of nano devices.
2010.12~2011.07
本計畫已根據計畫目標建立一配備四極質譜儀之光阻釋氣評估系統與分析技 術，該全新的檢測方法第一次發現絕對測量光吸收與總離子釋氣率的線性關係，以 及第一次直接測量曝光動力速率 Dill’s C 參數。此光化學的動態量測結果對於 EUV 新光阻的研發極具價值。
本計畫也成功建立極紫外光干涉式曝光平台，以產生奈米級 1D 與 2D 干涉圖形。
雖然歐美日等國均已有相近設備技術(韓國尚無)，但我國半導體業卻具有主導商業量 產技術方向的實力，因此本技術平台的建立極有助於台灣新微影技術與材料的研 發。此外，目前尚無有關奈米元件的 EUV 輻射損傷的研究報告。本計畫針對極紫外 光輻射損傷的研究結果，對於未來 EUVL 實際應用於量產先進非揮發性記憶體或邏 輯元件，極具有參考價值。
In this project, we have designed and constructed an evaluation station equipped with QMS (quadruple mass spectrometer) for both neutral/ionic outgassing measurements.
With the novel measurement scheme, we found the first time that the F+ outgassing is proportional to the F photoabsorption of the resist under EUV irradiating. The exposure kinetic rate constants and Dill’s C parameters were also determined directly. To our knowledge, this is also the first direct measurement to determine the Dill’s C parameters.
The kinetic measurement results are very precious for new resist development.
This project also successively establishes a platform of EUV interference lithography (IL) to generate 1D and 2 D nano-pattern through the home-made transmission grating mask. Although Europe, Japan and US (not Korea) have similar technology already, But Taiwan’s semiconductor industry have the power to dominate the developing direction of mass-production technology. The established EUV IL platform will benefit the development of new resist materials and new pattern technology in Taiwan. Beside, there are very rare reports about EUV radiation damage so far. The results obtained in this project indicate that high-energy EUV photon will damage most semiconductor materials.
However, the radiation-damage resistance of the nano devices can be effectively improved by optimizing materials and structure design. The results are very valuable for the EUVL mass-production of nano devices.