2008.08~2009.05
半導體是目前台灣主要的產業之一，2006 年的產值已超過 1 兆 5 千億。根據 ITRS
2006 之報告，極紫外光微影技術仍是 32 奈米以下次世代主流的微影技術之一。然 而，目前台灣學術界與工業界幾乎仍無從事次世代 EUVL 微影技術的研發。在 EUVL 技術中，光阻與薄膜的光學性質(nkt)量測對於微影技術與光罩研發均是必須具備的 技術。根據實際的討論溝通，此技術也是台灣半導體產業在 EUVL 技術初期研發中 所最需要的技術。而本計畫已成功建立一個技術平台，包括 EUV 反射儀、光學模擬 能力與量測技術，以量測光阻與薄膜材料的 nkt 值。
本計畫成功踏出台灣極紫外光微影技術研究發展的第一步，不但建構初步的 EUV 研究環境與設施，訓練學生人力，也陸續促發產學研相關的研究議題與計畫。
計畫。特別是本計畫中所建構光阻釋氣評估系統，透過全新的分析方法，可即時分 析光化學反應行為。而計畫中所建立之 EUV 波段薄膜光學性質量測平台，其分析精 準度已媲美國外先進水準。以上兩項分析技術平台均可立即提供國內廠商使用，提 供在地、即時而精確的分析量測，對於台灣 EUVL 微影技術的發展極具積極而正面 的價值。
The semiconductor industry is the major business in Taiwan; the output value has exceeded 1500 billions in 2006. According the ITRS 2006 report, EUV (@13.5 nm) Lithography will be one of the main streams for the next generation lithography (NGL) technology with a resolution down to 32nm and beyond. However, almost no effort has been done on EUVL in Taiwan for the NGL technology so far. The nkt measurement of the resist and optical thin film is the essential capability for EUVL research. It is also the most-required technology for Taiwan’s semiconductor industry if EUVL is applied. In this project, we have successively established a technology platform, including reflectometer, simulation tool and measurement technique, to measure the nkt properties of the resist and optical thin film. The experimental results show that the measurement results of a
benchmark film indicate that the results is quite close to that measured by other two international laboratories. Especially, the technology platform is designed and constructed 100 % by ourselves. This work has made a first and successful step of EUVL technology in Taiwan. All the EUVL-related researchers, both from academics and industries, might benefit from this achievement.
The conducting of this project is the first step of the EUVL research in Taiwan. This project not only establishes the fundamental EUVL facilities, trains the talents, but also initiates the following and extending EUVL-related research program. Especially, a novel evaluation chamber has been constructed in this project for analyzing kinetic outgassing behavior of the resist. A complete nkt measurement platform @EUV for thin films was also established, and its performance is comparable with other leading-edge system in the world. These technical platforms could provide real-time and accurate analytical
capabilities for domestic industry, which will benefit the R& D of EUVL technology in Taiwan.
2009.06~2010.05
本計畫已成功踏出台灣極紫外光微影技術研究發展的第一步，不但建構初步的 EUV 研究環境與設施，訓練學生人力，也陸續促發產學研相關的研究議題與計畫。
特別是本計畫中所建構光阻釋氣評估系統，透過全新的分析方法，可即時分析光化 學反應行為。而計畫中所建立之 EUV 波段薄膜光學性質量測平台，其分析精準度已 媲美國外先進水準。由於本計畫的成果進展，台灣積體電路製造股份有限公司(Taiwan Semiconductor Manufacturing Company, TSMC)及日本日產化學工業株式會社(Nissan Chemical Industries Ltd., Japan, NCI)對於在台灣進行光阻釋氣研究開始感興趣。本團 隊已與台積電簽立了共同研發計畫（Joint development project, JDP），計畫名稱為”極 紫外光光阻釋氣的定性與定量評估”，與日產化學工業株式會社簽立的計畫為”極紫 外光底層材料釋氣評估”。而計畫中所建立之 EUV 干涉式微影曝光平台，目前正在 積極測試中，可以曝光一維及二維的週期性圖案，將可以成為研究極紫外光微影術 的曝光能力及檢測光阻曝光極限的工具。期望能夠進一步成為 EUV 曝光測試平台。
以上兩項設備在發展完成之後，可以做為分析及曝光平台，提供國內廠商使用，對 於台灣 EUVL 微影技術的發展極具積極而正面的價值。
This project is the first step of the EUVL research in Taiwan. This project not only establishes the fundamental EUVL facilities, trains the talents, but also initiates the following and extending EUVL-related research program. Especially, due to the progress of this project, Taiwan Semiconductor Manufacturing Company (TSMC) and Nissan Chemical Industies Ltd. in Japan (NCI) are interested in conducting the resist outgassing study in Taiwan. A complete nkt measurement platform @EUV for thin films was also established, and its performance is comparable with other leading-edge system in the world We signed two joint development projects (JDP) with both. The TSMC project is
“ Quantitative and Qualitative Evaluation of Outgassing From EUV Photoresists“, and the NCI project is “ Outgassing Evaluation for Nissan EUV Underlayer Materials“. On the other hand, an EUV interferometric exposure platform is constructing in this project for exposing one-dimensional or two-dimensional gratings, simulating line/space, holes patterns. It can be an important tool to investigate the EUV exposure capability and explore the limits of EUV resist performance. These equipment could be analytical and exposure platforms for domestic industry, which will benefit the R& D of EUVL technology in Taiwan.
2010.06~2010.07
本計畫由零開始，啟動台灣的 EUVL 研究。目前主要的成果效益包括:
(1) 成功建構包括高精度 EUV 反射儀，配備四極質譜儀的光阻釋氣分析系統以及干 涉微影系統等重要設備，並建立相關實驗分析技術。
(2) 台灣半導體廠於 2009 年正式跨入 EUVL 研發，並投入大量資金建構相關技 術設備。本計畫所建立的分析技術與設備，目前均有國內半導體廠實際委託、合
作或參與研究，在同步輻射中心進行研究分析。
(3) 本計劃已投入超過 30 位師生從事 EUVL 相關研究，並已有超過 12 篇的碩士論 文產生。本計畫已成功培育先進 EUVL 技術的人力。
This project has successively initiateed EUVL researches in Taiwan. The major impacts of the project are:
(1) Based on synchrotron-EUV light source, this project has established several important endstations and analytical technologies for EUVL-related researches. They include a high-resolution EUV reflectometer, a resist evaluation system coupled with QMS, and a EUV interference lithography system.
(2) Based on the above achievements, domestic semiconductor companies have coupled with this project via commission projects or join researches.
(3)More than 30 professors and graduate students have joined EUVL-related researches in this project. More than 12 master theses hase been produced. We believe that this project has successively bred the talents about novel EUVL technology.
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以及項 4 之本團隊重要著作。