本實驗將矽原子分別蒸鍍於銀/矽(111)-(√3x√3) 和銀/鍺(111)-(√3x
√3) 兩表面，嘗試於兩表面上成長矽烯。而在兩系統當中，皆可觀察到銀 原子層上浮，且矽原子鋪平於基底的實驗證據，此為 Surfactant effect 的典 型現象之一。縱使如此，於矽/銀/鍺的系列實驗當中，仍於表面上觀察到了
矽在銀/鍺(111)-(√3x√3) 系統
在此系統之實驗中，觀察到了 √3x√3 島以及較低矮的局部有序結構。
有序結構為矽原子排列組成的鬆散結構，其在正負偏壓下的樣貌略有不同。
本文提出了有序結構模型，區分為 2x2 六角結構以及矩形結構，並說明正 負偏壓下亮點排列的規則。在室溫至 520K 的溫度區間內，皆可於表面觀 察到有序結構。√3x√3 島乃由矽原子團與下方銀原子層互換，且於鍺基 底上形成平坦矽原子層而來，是矽在該表面排列較為緊密的結構。表面上 出現 Surfactant effect 與否，除了與表面溫度有關之外，亦與表面矽原子的 數量有關。推測當鍍量達到一定的程度時，表面上之矽原子皆會以√3x√
3 島的形式出現。而當溫度介於 520K 至 620K 時，√3x√3 島之矽原子層 以及有序結構之矽原子皆會擴散入基底。
參考文獻
[1] “Electric Field Effect in Atomically Thin Carbon Films”
K. S. Novoselov, A. K. Geim et al., Science 306, 666 (2004) [2] “The electronic properties of graphene”
A. H. Castro Neto, F. Guinea et al., Rev. Mod. Phys. 81, 109 (2009)
[3] “Theoretical possibility of stage corrugation in Si and Ge analogs of graphite”
K. Takeda and K. Shiraishi, Phys. Rev. B 50, 14916 (1994).
[4] “Epitaxial growth of a silicene sheet”
Boubekeur Lalmi, Hamid Oughaddou et al., Appl. Phys. Lett. 97, 223109 (2010);
[5] “Evidence of Dirac fermions in multilayer silicone”
Paola De Padova, Patrick Vogt et al., Appl. Phys. Lett. 102, 163106 (2013) [6] “Buckled Silicene Formation on Ir(111)”
Lei Meng, Yeliang Wang et al., Nano Lett. 13, 685 (2013)
[7] “Experimental Evidence for Epitaxial Silicene on Diboride Thin Films”
Antoine Fleurence, Rainer Friedlein et al., Phys. Rev. Lett. 108, 245501 (2012) [8] “ Fe-silicide nanostructures on Si(111)-√3x√3-Ag”
K. Vanormelingen, K. Paredis et al., J. Appl. Phys. 98, 024302 (2005) [9] “Growth of silicene layers on Ag(111): unexpected effect of the substrate
temperature”
H Jamgotchian, Y Colignon et al., J. Phys.: Condens. Matter 24, 172001 (2012) [10] “Evidence of Silicene in Honeycomb Structures of Silicon on Ag(111)”
Baojie Feng, Zijing Ding et al., Nano Lett. 12, 3507 (2012)
[11] “Silicene: Compelling Experimental Evidence for Graphenelike Two- Dimensional Silicon”
Patrick Vogt, Paola De Padova et al., Phys. Rev. Lett. 108, 155501 (2012) [12] “Quantum Physics of Atoms, Molecules, Solids, Nuclei and particles (2nd Ed)”
R. Eisberg and R. Reanik, Wiley (1985)
[13] “Tunneling from a many-particle point of view”
J. Bardeen, Phys. Rev. Lett. 6, 57 (1961)
[14] “鐵在鍺(111)-c(2x8)及銀/鍺(111)-(√3x√3)表面上隨溫度衍化的行為”
周明寬, 國立臺灣師範大學碩士論文 (2013) [15] Instruments for Surface Science, Omicron (2000) [16] 表面分析儀器, 國科會精儀中心 (1998) [17] 真空技術與應用, 國科會精儀中心 (2001) [18] 真空技術精華, 蘇清森, 五南 (2003)
[19] User’s manual, High Vacuum Technology, Alcatel (1998)
[20] Operating and Maintenance Handbook ST22 Titanium Sublimation Pump Cartridge, Vacuum Generators (2002)
[21] UHV Bayard-Alpert Gauge Manual, Arun Microelectronics (2012)
[22] Vacweld Miniature K-cell Effusion Source Operator’s Handbook, Vacweld (2003)
[23] Instruction Manual UHV Evaporator EFM3/4 Triple Evaporator EFM3T, Omicron (1999)
[24] EX03 Ion Gun Systems Operating Manual, VG Microtech (1999) [25] Instruction Manual Extorr XT series RGA, Extorr (2009)
[26] “電化學備製應用於 STM 鎢探針之研究”
林鈺桓, 長庚大學碩士論文(2006)
[27] “Scanning tunneling microscope study of dynamic phenomena on clean Si(111) surface: Si magic clusters and their role”
I. S. Hwang, M. S. Ho et al., J. Phys. Chem. Solids 62, 1655 (2001) [28] “Surface atomic structure of Ag/ Si(111)-√3x√3”
H. M. Zhang, J. B. Gustafsson et al., Phys. Rev. B 74, 201304 (2006) [29] “Surface reconstructions in the Ag/Si(111) system”
K. J. Wan, X. F. Lin et al., Phys. Rev. B 47, 13700 (1993)
[30] “Electronic structure of Ge(111)c(2x8): STM, angle-resolved photoemission, and theory”
I. Razado-Colambo, Jiangping He et al., Phys. Rev. B 79, 205410 (2009)
[31] “Atomic structure of the Ag/Ge(111)-√3x√3 surface: From scanning tunneling microscopy observation to theoretical study”
L. W. Chou, H. C. Wu et al., J. Chem. Phys. 131, 224705 (2009) [32] “Surface phase diagrams for the Ag–Ge(111) and Au–Si(111) systems”
D. Grozea, E. Bengu et al., Surf. Sci. 461, 23 (2000)
[33] “Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth”
Bert Voigtlander, Surf. Sci. Rep. 43, 127 (2001) [34] “Surfactants in epitaxial growth”
M. Copel, M. C. Reuter et al., Phys. Rev. Lett. 63, 632 (1989) [35] “The surfactant effect in semiconductor thin film growth”
Daniel Kandel, Efthimios Kaxiras, Solid state physics : advances in research and applications 54, 219 (2000)
[36] “Surfactant-mediated growth of Ge on Si(111)”
M. Horn-von Hoegen, M. Copel et al., Phys. Rev. B 50, 10811 (1994) [37] “Universal Kinetics in Reaction-Limited Aggregation”
R. C. Ball, D. A. Weitz et al., Phys. Rev. Lett. 58, 274 (1987)
[38] “Nucleation and growth of Ge at Pb_Si(111) surfaces_Reaction-limited aggregation”
Ing-Shouh Hwang, Tien-Chih Chang et al., Jpn. J. Appl. Phys. 39, 4100 (2000) [39] “Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium”
S. Cahangirov, M. Topsakal et al., Phys. Rev. Lett. 102, 236804 (2009) [40] “WSXM: A software for scanning probe microscopy and a tool for
nanotechnology”
I. Horcas, R. Fernández et al., Rev. Sci. Instrum. 78, 013705 (2007) [41] “Strain induced intermixing of Ge atoms in Si epitaxial layer on Ge(111)”
Aki Tosaka, Izumi Mochizuki et al., J. Appl. Phys. 113, 073511 (2013) [42] “Formation of a root 3 x root 3 surface on Si_Ge(111) studied by STM and
LEED”
Jacek R. Osiecki, R.I.G. Uhrberg, Surf. Sci. 603, 2532 (2009)