效益測試結果

進行 ICOS color measurement 比對動作時，同樣先以拋光晶片來進行厚度檢 控動作，再配合橢圓儀膜厚量測行為與 PECVD 的速度參數進行薄膜厚度調

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Histogram of BlueEye2_Average_total Normal

Panel variable: Bin

現行載具 Bin 1

架空處理 Bin2

緊接著來看太陽能電池片的效率量測各參數資料，因為實驗事前電池

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圖 5-20 光電轉換電性參數表

圖 5-21 光電轉換效率分布表

第六章、結論與展望

6-1 結論

經過一系列的實驗下來，我們初步獲知各種沉積條件變化下對 SiN_x氮 化矽沉積薄膜特性的影響。反應壓力、射频功率、反應總氣體流量和反應 温度的增加上升大都会引起 SiN_x薄膜折射率的增加趨勢，而 NH₃/SiH4流量 比率變化增加卻是讓 SiN_x薄膜折射率下降。至於薄膜生長厚度的影響，則 因反應總氣體流量、射频功率和反應温度的增加上升而增加沉積速率；但 沉積速率卻因反應壓力與 NH₃/SiH4流量比率增加而遞減。不過在薄膜生長 均勻性方面卻沒有直接的關係影響，雖然各沉積條件都對於沉積速率有直 接關係，但都無法針對實際工業生產所面臨局部特殊性異常薄膜偏薄現 象，提供有效改善效果。

在最後的實驗中，針對電池片表面抗反射氮化矽沉積異常特殊現象進 行變更載具與電池片接觸方式，提供一組架空電池片方式的載具，得到實 驗結果比較可以看出，同時因為所有的 PECVD 製程參數條件並沒有變動情 況下，所以在沉積生長的氮化矽薄膜特性上並沒有太明顯差異變化與影 響。不過，此次的沉積薄膜均勻性卻因為電池片周邊的膜厚增加而獲的改 善。我們認為架空電池片方式提供了可免除與載具直接接觸可能性，避免 電池片直接受載具的溫度變化影響，避免直接造成基材電池片的溫度變

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最後，希望在此能藉由載具上的變更設計，供業界改善太陽能電池片 顏色參考方向。希望能藉由最簡單且花費最低費用方式，達到減輕各廠的 再製重工費用，降低生產成本也同時減少光電效率量測的誤差。最後提供 圖 6-1 a & b 為這次實驗的載具設計圖給大家參考。

圖 6-1 a.載具設計變更圖示

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現行使用載具 架空載具處理

圖 6-1 b.載具設計變更實例照片圖

參考文獻

[1] BP Statistical Review of World Energy June 2009, [2] 引用自網頁 http://solarinfra.in/FAQ.htm

[3] 引用自網頁 http://www.nrel.gov/

[4] D.-H. Neuhaus, A. Münzer, “Industrial Silicon Wafer Solar Cells,” Advances in OptoElectronics, 2007, Article ID 24521

[5] SINA Process Training, Roth & Rau AG, 2009, P13

[6] 劉佳怡，太陽光電產業製程與技術發展趨勢，工研院 IEK

[7] P. V. Zant, “Microchip fabrication: a practical guide to semiconductor processing”, 4th ed. ISBN 957-493-427-6.

[8] 引用自網頁 http://www.pveducation.org/

[9] J. A. Mazer, SOLARDELLS: An Introduction to Crystalline Photovolatic Technology, Kluwer Academic Publishers, 1997

[10] W. Wettling, “High efficiency silicon solar cells: State of the art and trends”, Solar Energy Materials & Solar Cells, 38, pp.487-500, 1995

[11] 莊達人，VLSI 製造技術，六版，高立，2011

[12] 張俊彥，鄭晃中，積體電路製程及設備技術手冊，中華民國產業技術 發展協會，台北，1997.07

[13] B. Kim, D. W. Kim, S. S. Han, “Refraction properties of PECVD of silicon nitride film”, Vacuum, 72, pp.358-592, 2004

[14] K. Coates, et al., Deposition of Silicon Nitride to Improve the Conversion Efficiency, 1st, 2000

[15] S.-S. Han, L. Cai, A. Rohatgi, Modeling the Growth of PECVD Silicon Nitride Films for Solar Cell Applications Using Neural Networks, IEEE transactions on semiconductor manufacturing, 9, 3, 1996

[16] Z. Chen, et al., “Plasma enhanced chemical vapor deposited oxide for low surface recombination velocity and high effective lifetime in silicon”, J.

Appl. Phys., 74(4), 15, 1993

[17] 李琼，陈永兴，『PECVD 氮化硅薄膜的制备和研究』, 上海师大学学

97

报, 1980, 13, pp. 34-40

[18] S. Narasimha, A. Rohatgi, “Effective passivation of the low resistivity silicon surface by a repaid thermal oxide/plasma silicon nitride stack”, Applied Physics Letters, 72, 15, 1998

[19] W. J. Soppe, et al., “Bulk and surface passivation by silicon nitride grown by remote microwave PECVD”, EPVSEC, 17, pp. No VC 1.38, 2001

[20] 杨宏等，多晶硅太阳电池的氮化硅钝化半导体情报，第 38 卷，第 6 期，

pp.39-41，2001

[21] D. S. Ruby, et al., “A statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells”, IEEE

1st WCPEC, pp.1335-1338, 1994

[22] 莊嘉琛，太陽能工程-太陽能電池篇，全華圖書。1997

[23] D. Buiea, et al., “Full day simulations of anti-reflection coatings for at plate silicon photovoltaics”, Solar Energy Materials & Solar Cells, 81, pp.13 -25, 2004

[24] 林明憲，太陽能電池技術入門，全華圖書，2008.03

[25] R. Hezel, R. Schrner, “Plasma silicon nitride-a promising dielectric to achieve high-quality silicon MIS/IL solar cells”, Applied Physics, 52, 3076, Journal of 1981

[26] C. Leguijt, “Surface Passivation for Silicon Solar Cells”, Utrecht University, 1995

[27] J. Schmidt, A. G. Aberle, “Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition”, Applied Physics, 85, pp.3626–3633, Journal of 1999

[28] B. Lenkeit, R. Hezel, “Improved understanding of the surface - passivation properties of RPECVD silicon nitride on p-type crystalline silicon”, Proceedings of the 17th European Photovoltaic Solar Energy Conference, pp.343–346, Munich, Germany, October of 2001

[29] A. Cuevas, M. Kerr, J. Schmidt, “Passivation of crystalline silicon using silicon nitride”, Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, pp.913–918, Osaka, Japan, 11–18 May 2003

[30] L. Mittelstädt, et al., “Front and rear silicon-nitride-passivated multi- crystalline silicon solar cells with an efficiency of 18.1%”, Progress in

Photovoltaics: Research and Applications, 10, pp.35–39, 2002

[31] M. H. Kang, et al., “Optimization of SiN AR coating for Si solar cells and modules through quantitative assessment of optical and efficiency loss mechanism “, Prog. Photovolt: Res. Appl. 2011; 19:983–990

[32] A.S.H. van der Heide, et al., “CONTACT RESISTANCES MEASURED USING THE CORESCAN: RELATIONS WITH CELL PROCESSING”

[33] A. R. Burgers, “How to Design Optimal Metallization Patterns for Solar Cells” Netherlands Energy Research Foundation ECN, B.O.Box 1, 1755 ZG Petten, The Netherlands Copyright # 1999 John Wiley & Sons, Ltd

[34] B. Sopori, B. Butterfield, J. Amieva, “Detailed Characterization of AR Coatings on Si Solar Cells: A New Application of GT-FabScan 6000”, the 14th Workshop on Crystalline Silicon Solar Cells and Modules Winter Park, Colorado, August 8–11, 2004

[35] E. S. Marstein, et al., “ACIDIC TEXTURING OF MULTICRYSTALLINE SILICON WAFERS”, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller, NORWAY

[36] C. J. J. Tool, et al., “17% mc-Si solar cell efficiency using full in-line processing with improved texturing and screen-printed contacts on high-ohmic emitters”, EU PVSEC ’05, pp. 578–583, Barcelona, Spain, June 2005,

[37] S. W. Park, J. Kim, S. H. Lee, Application of Acid Texturing to Multi- Crystalline Silicon Wafers in Journal of the Korean Physical Society, Vol.

43, No. 3, September 2003, pp. 423–426

[38] A. Hauser, et al., “A simplified process for isotropic texturing of mc-Si”, WCPEC’03, vol. 2, pp. 1447–1450, Osaka, Japan, May 2003.

[39] A. Luque, et al., Solar Cells and Optics for Photovoltaic, Adam Hilger, Bristol and Philadelphia, 1989

[40] A. Hauser, et al., “Acidic texturisation of mc-Si using a high throughput in-line prototype system with no organic chemistry”, EU PVSEC ’04, pp.

1094–1097, Paris, France, June 2004.

[41] G. Emanuel, et al., “High throughput isolation of crystalline silicon solar cells”, EU PVSEC ’01, pp. 1578-1581, Munich, Germany, October 2001.

[42] I. Melnyk, et al., “Acidic texturisation of mc-Si using a high throughput in-line prototype system with no organic chemistry”, EU PVSEC ’04, p.

416, Paris, France, June 2004

[43] A. Hauser, et al., “Comparison of different techniques for edge isolation”, EU PVSEC’01, pp. 1739–1742, Munich, Germany, October 2001

[44] 引用自網頁 http://www.rena.com/

99

[45] A. G. Aberle, R. Hezel, “Progress in low - temperature surface passivation of silicon solar cells using remote-plasma silicon nitride”, Progress in Photovoltaics, vol. 5, no. 1, pp. 29–50, 1997.

[46] A. G. Aberle, “Surface passivation of crystalline silicon solar cells: a review”, Progress in Photovoltaics, vol. 8, no. 5, pp. 473–487, 2000

[47] W. Soppe, H. Rieffe, A. Weeber, “Bulk and Surface Passivation of Silicon Solar Cells accomplished by silicon nitride deposited on industrial scale by microwave”, Prog. Photovolt, pp. 551-569, 2005

[48] A. R. Burgers, “How to Design Optimal Metallization Patterns for Solar Cells” Netherlands Energy Research Foundation ECN, B.O. Box 1, 1755 ZG Petten, The Netherlands Copyright # 1999 John Wiley & Sons, Ltd [49] 引用自網頁: http://nims.go.jp/

[50] Z. Chen, et al., “Pasma-enhanced chemical – vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon”, J.

Appl. Phys., 74(4), 15, 1993

[51] 引用自網頁:http://www.itrc.narl.org.tw/

[52] P. E. J. Flewitt, R. K. Wild, “Physical Methods for Materials

Characterization”, Institute of Physics Publishing Bristol and Philadelphia, 1994

[53] 引用自網頁: http://www2.fisica.unlp.edu.ar/

[54] ICOS Photovoltaic Inspection-Operator Manual PVI-6, KLA-TENCOR, Oct-2009

[55] L. I. Liqin, “Process Research on PECVD SiNx : H Film for Crystalline Silicon Solar Cells“, Department of Mechanical and Elect rical Engineering, Suqian College, Suqian 223800, China

[56] I. Pereyra, M. I. Alayo,“High quality low temperature DPECVD silicon dioxide”, Journal of Non-Crystalline Solids, 212, 1997, pp. 225-231

[57] 陈东. 用 PECVD 法沉积的氮化硅减反射膜对太阳电池的影响[D]:[硕 士学位论文].上海:上海交通大学,2003

[58] D. N. Wright, “Anti-reflection coatings for silicon solar cells “Department for Solar Energy Institute for Energy Technology