近年來由於高科技技術快速發展，在高頻通訊、高功率微波元
件及光電元件等領域的規格與需求皆大大地提昇，如何精益求精再提 升元件的操作電壓是不可忽略的議題之一。藉由本論文模擬提出的 AlGaN/GaN/AlGaN QW 結構是可在同一尺寸下達到此目的方法之一，
未來計畫可否利用MOCVD磊晶基台製作出新元件，進一步與模擬結果 相驗證比較而修正理論模型，將有利於HEMT在新世代高功率半導體元 件領域中發光亮眼。
再來，氮化鎵擁有十分獨特的材料特性，其寬廣的直接能隙可 用來製作可見光到紫外波段的光電元件，如藍綠光發光二極體(LED)、
雷射二極體(LD)。其中藍綠光發光二極體可提供儀器、號誌、顯示看板 等產品更多的顯示色彩，而雷射二極體則可應用在目前或是更高密度 的光資訊儲存讀寫頭。相信在未來的科技裡，三五族化合物半導體扮演 著舉足輕重的重要角色。
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