第六章 結論與展望
6.2 未來展望
在矽晶太陽能電池的製程中，大部分材料缺陷都是表面刮傷，再由刮 傷成長成裂縫，裂縫缺陷又以表面裂縫為多數，故未來能以表面裂縫為主 要研究課題。表面裂縫的特徵在面外變形比較容易顯現，可改良 ESPI 面外 位移量測實驗架構，設計新的面外振動實驗夾具，致振器改成垂直太陽能 電池表面激振，接收訊號之換能器也由表面接收。
未來可對表面裂縫做更深入的研究，像是裂縫長度與深度對共振頻率 改變及 ESPI 實驗之影響，在數值模擬方面，可以對太陽能電池模型之元素 類型改為接觸元素做分析，使裂縫更接近真實情形。
97
表 6.1-1 本研究量測太陽能電池面內共振模態與[1]之結果(Ⅰ)
[1] 本研究
20.55 kHz 20.45 kHz
32.2 kHz 32.1 kHz
45.25 kHz
47.8 kHz
98
表 6.1-2 本研究量測太陽能電池面內共振模態與[1]之結果(Ⅱ)
[1] 本研究
57.23 kHz
58.4 kHz
99
表 6.2 多晶太陽能電池同一方向檢測之實驗結果 多晶太陽能電池
Ux Ux
57.23 kHz 57.21 kHz
Uy Uy
57.18 kHz 57.2 kHz
100
表 6.3 貫穿裂縫對矽晶太陽能電池數值模擬與實驗結果 貫穿型裂縫之多晶太陽能電池
數值模擬 ESPI 實驗
檢測 y 方向 一側時諧外力、一側Uy0，
檢測 y 方向
43.706 kHz 45.88 kHz (貫穿) 46.53 kHz (完整)
貫穿型裂縫之單晶太陽能電池
數值模擬 ESPI 實驗
檢測 y 方向 一側時諧外力、一側Uy0，
檢測 y 方向
24.573 kHz 20.1 kHz (貫穿) 20.38 kHz (完整)
33.518 kHz 31.3 kHz (貫穿) 32.1 kHz (完整)
101
表 6.4 矽晶太陽能電池數值模擬與實驗結果 多晶太陽能電池
時諧分析
面內 ESPI 實驗
邊界條件 45.88 kHz (貫穿) 46.53 kHz (完整)
Uy
邊界條件 55.77 kHz (貫穿)
Uy
0 20 40 60 80
Frequency (kHz) -240
-200 -160 -120 -80 -40
Magnitude (dB)
Fx_Uy Fy_Uy
102
103
參考文獻
[1] 鄭志遠 (2011)，
矽基板面內共振的電子光斑干涉量測
，國立交通大 學機械工程學系碩士論文，新竹市，台灣。[2] J. N. Butters and J. A. Leendertz (1971), “Speckle patterns and holographic techniques in engineering metrology,” Optics Laser
Technol., 3(1), 26–30.
[3] K. Høgmoen and O. J. Løkberg (1977), “Detection and measurement of small vibrations using electronic speckle pattern interferometry,” Applied
Optics, 16(7), 1869-1875.
[4] W.-C. Wang, C.-H. Hwang, and S.-Y. Lin (1996), “Vibration measurement by the time-average electronic speckle pattern interferometry methods,” Applied Optics, 35(22), 4502-4509.
[5] C.-H. Huang and C.-C. Ma (2000), “Vibration of cracked circular plates at resonance frequencies,” Journal of Sound and Vibration, 236(4), 637-656.
[6] V. M. Murukeshan, Y. F. Lai, V. Krishnakumar, L. S. Ong, and A.
Asundi (2003), “Development of Matlab filtering techniques in digital speckle pattern interferometry,” Optics and Laser in Engineering, 39, 441-448.
[7] C.-C. Ma, Y.-C. Lin, and H.-Y. Lin (2008), “Dynamic in-plane resonant characteristics of piezoceramic and piezolaminated composite plates,”
IEEE Transactions on Ultrasonic, Ferroelectrics, and Frequency Control, 55(3), 526-537.
[8] S. Ostapenko and I. Tarasov (2000), “Nonlinear resonance ultrasonic vibrationsin Czochralski-silicon wafers,” Applied Physics Letters, 76(16), 2217-2219.
[9] S. Ostapenko, W. Dallas, D. Hess, O. Polupan, and J. Wohlgemuth (2006), “Crack detection and analyses using resonance ultrasonic vibrations in crystalline silicon wafers,” IEEE, 920-923.
[10] S. Ostapenko, A.Belyaev, O. Polupan, W. Dallas, and D. Hes (2006),
“Crack detection and analyses using resonance ultrasonic vibrations in
104
full-size crystalline silicon wafers,” Applied Physics Letters, 88, 111907.
[11] A. Belyaev, O. Polupan, S. Ostapenko, D. Hess, and J. P Kalejs (2006),
“Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers,” Semiconductor Science and Technology, 21, 254-260.
[12] W. Dallas, O. Polupan, and S. Ostapenko (2007), “Resonance ultrasonic vibration for crack detection in photovoltaic silicon wafers,”
Measurement Science and Technology, 18, 852-858.
[13] C. Hilmersson, D. P. Hess, W. Dallas, and S. Ostapenko (2007), “Crack detection in single-crystalline silicon wafers using impact testing,”
Applied Acoustics, 69, 755–760
[14] A. Monastyrskyi, S. Ostapenko, O. Polupan, H. Maeckel, and M. A.
Vazquez (2008), “Resonance ultrasonic vibrations for in-line crack detection in silicon wafers and Solar Cells,” IEEE the 33th Photovoltaic
Specialists Conference .
[15] A. Belyaev, Yu. Emirov, S. Ostapenko , I. Tarasov, V. Verstraten, M.
Van Dooren, P. G. Fumei, G. Van Veghel, P. Bentz, and A. Van Der Heide (2009), “Yield enhancement for solar cell manufacturing using resonance ultrasonic vibrations inspection,”
IEEE the 34th Photovoltaic Specialists Conference, 001918-001921.
[16] Yu. Emirov, A. Belyaev, D. Cruson , I. Tarasov, A. Kumar, H. Wu, S.
Melkote, and S. Ostapenko (2011), “Pinhole detection in si solar cell using resonance ultrasonic vibrations,”
IEEE the 37th Photovoltaic Specialists Conference, 002161-002163.
[17] 溫子逵 (2012)，
電子光斑干涉術應用於矽晶太陽能電池之裂縫檢測
， 國立交通大學機械工程學系博士論文，新竹市，台灣。[18] ANSYS, Release 11.0 Documentation for ANSYS
： Element Library. SAS
IP, Inc., USA, 2007.105
sin sin cos cos sin cos
2 t 2 t 2 t t
(2.10)106
將(2.15)式代入(2.13)式中，可得
107 其中，
J
0為零階第一類貝索函數(zero-order Bessel function of the first kind)。將(2.19)式減去(2.6)式，即為靜止與振動彼此光強度相減，可表示為
108
將(2.25)式代回(2.23)式，可得第二張擷取影像之光強，可表為
2 22 0
2 cos 1 1 ( ) ( )
o r o r o r
4
I I I I I A J A
(2.26) 將兩影像相減，即(2.26)式減去(2.21)式可表示為109
cos 2sin
x