第六章 結論與未來展望
6.2 未來展望
本論文主旨為利用石墨烯薄膜與矽基蕭特基接面製作可見光/紅外光偵測器，
且希望未來這些光偵測器模組可與其他光學元件整合，製作微型光譜儀，但為了 微型光譜儀達高解析度，目前研究之元件光偵測響應率仍有待提升。
石墨烯光偵測器原型經測試，可以確實偵測可見光波段光子，但似乎無法偵 測波長 1550 奈米光子訊號，推測可能是製程中使用之有機物殘餘[105]，抑或是石 墨烯轉移造成的皺褶[106]或缺陷，影響石墨烯能帶或費米能階之改變，進而影響 其偵測波段，因此要從製程步驟著手優化，使偵測波段趨近理論，而與波導、共 振腔等光學元件整合應該會有助於提升其元件響應率。
矽基蕭特基能障二極體的研究中顯示，透過銅/p 型矽形成之蕭特基接面，已 可利用內部光激發吸收(internal photoemission absorption)機制確實偵測光通訊波段 雷射之訊號，但響應率仍不夠好，未來可嘗試於蕭特基接面上製作奈米結構，以 局部表面電漿共振(localized surface plasmon resonance, LSPR)強化蕭特基能障二極 體之光偵測能力。
參考文獻
[1] D.L. Chubb, Fundamentals of Thermophotovoltaic Energy Conversion. Elsevier:
Amsterdam,The Netherlands, pp. 515, 2007.
[2] http://how-it-looks.blogspot.tw/2010/01/infrared-radiation-black-bodies-and.html [Accessed:2-Jul-2016].
[3] W. Herschel, ―Experiments on the refrangibility of the invisible rays of the sun,‖
Phil. Trans. Royal Soc. Lond., vol. 90, pp. 284–292, 1800.
[4] E.S. Barr, ―The infrared pioneers—II. Macedonio melloni,‖ Infrared Phys., vol. 2, pp. 67–73, 1962.
[5] T.W. Case, ―Notes on the change of resistance of certain substances in light,‖ Phys.
Rev., vol. 9, pp. 305–310, 1917.
[6] A. Rogalski, ―Infrared detectors: Status and trends. Prog,‖ Quantum Electron, vol.
27, pp. 59–210, 2003.
[7] G. Holst, J.H. de Boer, M.C. Teves, and C.F. Veenemans, ―Foto−electrische cel en inrichting waarmede uit een primair, door directe lichtstralen gevormd beeld een geheel ofnagenoeg geheel conform secundair optisch beeld kan,‖ Dutch Patent 27062, British Patent 326200; D.R.P. 535208.
[8] G. Holst, J.H. de Boer, M.C. Teves, and C.F. Veenemans, ―An apparatus for the transformation of light of long wavelength into light of short wavelength,‖
Physica, vol. 1, pp.297–305, 1934.
[9] S.F. Johnson, A History of Light and Colour Measurement. Science in the Shadows. IOP Publishing Ltd, Bristol, 2001
[10] E. W. Kutzscher, ―Review on detectors of infrared radiation,‖ Electro−Opt. Syst.
Design, vol. 5, no. 30, 1973.
[11] W.N. Arnquist, ―Survey of early infrared developments,‖ Proc. IRE, vol. 47, pp.
1420–1430, 1959.
[12] R.J. Cashman, ―Film−type infrared photoconductors,‖ Proc.IRE, vol. 47, pp.
1471–1475, 1959.
[13] D.J. Lovell, ―Cashman thallous sulfide cell,‖ Appl. Opt., vol. 10, pp. 1003–1008, 1971.
[14] D.J. Lovell, ―The development of lead salt detectors,‖ Amer. J. Phys., vol., pp.
[15] W.D. Lawson, S. Nielson, E.H. Putley, and A.S. Young, ―Preparation and properties of HgTe and mixed crystals of HgTe−CdTe,‖ J. Phys. Chem. Solids, vol. 9, pp. 325–329, 1959.
[16] I. Kimukin, N. Biyikli, T. Kartaloglu, O. Aytur, and E. Ozbay, ―High-speed InSb photodetectors on GaAs for mid-IR applications,‖ IEEE J. Sel. Top. Quantum Electron, vol. 10, pp. 766–770, 2004
[17] A. F. Joullie, P. Christol, J. B. Rodriguez, H. Ait-Kaci, F. Chevrier, J. Nieto, and F. De Anda, ―A survey of new laser and detector structures for 3–5 um mid-infrared spectral range,‖ Proc. SPIE, vol. 5582, pp.211–221, 2004.
[18] T. Ashley et al., ―InSb focal plane array (FPAs) grown by molecular beam epitaxy (MBE),‖ Proc. SPIE, vol. 4028, pp. 398–403, 2000.
[19] N. Kuze, E. G. Camargo, K. Ueno, T. Morishita, M. Sato, M. Kurihara, H. Endo, K. Ishibashi, ―High performance miniaturized InSb photovoltaic infrared sensors operating at room temperature,‖ J. Cryst. Growth, vol. 301-302, pp. 997–1000, 2007.
[20] P. Norton, ―HgCdTe infrared detectors,‖ Opto−Electron.Rev. vol. 10, pp. 159–
174, 2002.
[21] M.A. Kinch, ―Fifty years of HgCdTe at Texas Instruments and beyond,‖ Proc.
SPIE, vol. 7298, pp. 72982T, 2009.
[22] F. Aqariden, J. Elsworth, J. Zhao, C. H. Grein, and S. Sivananthan, ―MBE HgCdTe for HDVIP Devices: Horizontal integration in the US HgCdTe FPA industry,‖ J. Electron. Mater., vol. 41, pp. 2700–2706, 2012.
[23] C. Downs and T. E. Vandervelde, ―Progress in Infrared Photodetectors since 2000,‖ Sensors, vol. 13, pp. 5054-5098, 2013.
[24] R. A. Soref, ―Extrinsic IR photoconductivity of Si doped with B, Al, Ga, P, As or Sb,‖ J. Appl. Phys., vol. 38, pp. 5201–5209, 1967.
[28] A. Buffaz, M. Carras, L. Doyennette, A. Nedelcu, P. Bois, V. Berger, ―State of the art of quantum cascade photodetectors,‖ Proc. SPIE, vol. 7660, pp. 76603Q-1, 2010.
[29] A. Barve, S. Krishna, Advances in Infrared Photodetectors, Elsevier: San Diego, CA, USA, 2011.
[30] X. Xiaohui, H. Hua, Q. Guangyin, L. Qingjun, H. Xiaoning, ―Study of the characteristics of VLWIR HgCdTe photovoltaic detectors in variable-area diode test structures,‖ Proc. SPIE, vol. 8193, pp. 819335-1, 2011.
[31] S. Krishna, ―Quantum dots-in-a-well infrared photodetectors,‖ J. Phys. D, vol. 38, pp. 2142–2150, 2005.
[32] A. D. Stiff-Roberts, ―Quantum-dot infrared photodetectors: A review,‖ J.
Nanophon., vol. 3, no. 1, 2011.
[33] A. Jdidi, N. Sfina, S. Abdi-Ben Nassrallah, M. Saïd, and J. L. Lazzari, ―A multi-color quantum well photodetector for mid- and long-wavelength infrared detection,‖ Semicond. Sci. Technol., vol. 19, pp. 83-88, 2011.
[34] J. Bundas et al, ―Two-color quantum well infrared photodetector focal plane arrays,‖ Proc. SPIE, vol. 6206, pp., 62060G-1, 2006.
[35] https://en.wikipedia.org/wiki/Pollution [Accessed:2-Jul-2016].
[36] D. A. Skoog, F. J. Holler and T. A. Nieman, Principles of instrumental analysis.
Philadelphia: Saunders College Pub., 1998.
[37] D. Sands, Introduction to crystallography. New York: W.A. Benjamin, 1969.
[38] D. J. Gardiner, P. R. Graves and H. J. Bowley, Practical Raman spectroscopy.
Berlin: Springer-Verlag, 1989.
[39] A. Stáhlavská, ―The use of spectrum analytical methods in drug analysis. 1.
Determination of alkaline metals using emission flame photometry,‖
Pharmazie, vol. 28, no. 4, pp. 238–239, 1973.
[40] R. F. Hirsh, ―The Riddle of the Gaseous Nebulae,‖ ISIS, vol. 70, no. 2, p. 196, 1979.
[41] J. M. Hollas, Modern Spectroscopy. Chichester: Wiley, 2004.
[42] D. C. Harris and M. D. Bertolucci, Symmetry and Spectroscopy. New York:
Oxford University Press, 1978.
[43] P. F. Bernath, Spectra of Atoms and Molecules. Oxford: Oxford University Press,
[44] J. D. Ingle and S. R. Crouch, Spectrochemical Analysis. Englewood Cliffs, N.J.:
Prentice Hall, 1988.
[45] 黃竣吉,陳世銘,楊翕雯,陳加增, "近紅外光技術應用於穿山甲中藥成分之檢 測," 農業機械學刊, 第 13 卷, 第 3 期, 2004。
[46] D. Sun, Infrared Spectroscopy for Food Quality Analysis and Control. Amsterdam:
Academic Press/Elsevier, 2009.
[47] Infrared Sensor Application Note 1: A Background to Gas Sensing by Non-Dispersive Infrared (NDIR), SGX Sensortech Ltd, 2007.
[48] 薛華毅, ―矽基微型光譜儀,‖ 國立台灣大學光電工程學研究所碩士論文, 2015 年 6 月。
[49] K. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I.V.
Grigorie and A. A. Firsov, ―Electric Field Effect in Atomically Thin Carbon Films,‖
Science, vol. 306, no. 5696, pp. 666-669, 2004.
[50] C. Lee, X. Wei, J. W. Kysar and J. Hone, ―Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene,‖ Science, vol. 321, no. 5887, pp.
385-388, 2008.
[51] I. W. Frank, D. M. Tanenbaum, A. M. van der Zande, and P. L. McEuen,
―Mechanical properties of suspended graphene sheets.‖ J. Vac. Sci. Technol. B, vol.
25, no.6, pp. 2558–2561, 2007.
[52] A. Castro Neto, F. Guinea, N. Peres, K. Novoselov, and A. Geim, ―The electronic properties of graphene,‖ Reviews of Modern Physics, vol. 81, pp. 109-162, 2009.
[53] K. S. Kim et al., "Large-scale pattern growth of graphene films for stretchable transparent electrodes," Nature, vol. 457, pp. 706-710, 2009.
[54] M. Orlita et al., "Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene," Phys. Rev. Lett., vol. 101, no. 267601, 2008.
electronic applications,‖ Chem. Eng. J., vol. 273, pp. 509-518, 2015.
[58] S. Bae et al., ―Roll-to-roll production of 30-inch graphene films for transparent electrodes,‖ Nat. Nanotechnol., vol.5, pp. 574-578.
[59] J. Wu, M. Agrawal, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen and P. Peumans,
―Organic Light-Emitting Diodes on Solution-Processed Graphene Transparent Electrodes,‖ ACS Nano, vol. 1, no.1, pp. 43-48, 2010
[60] T. Han et al., "Extremely efficient flexible organic light-emitting diodes with modified graphene anode," Nature Photonics, vol. 6, pp. 105-110, 2012.
[61] J. Wu, H. A. Becerril, Z. Bao, Z. Liu, Y. Chen and P. Peumans, ―Organic solar cells with solution-processed graphene transparent electrodes,‖ App. Phys. Lett., vol. 92, no. 263302, 2008.
[62] X. Wang, L. Zhi and K. Mullen, ―Transparent, conductive graphene Electrodes for dye-sensitized solar cells,‖ Nano Lett., vol.8, no.1, pp. 323-327.
[63] E. J. H. Lee, K. Balasubramanian, R. T. Weitz, M.Burghard and K. Kern, "Contact and edge effects in graphene devices," Nat. Nanotechnol., vol. 3, pp. 486-490, 2008.
[64] J. Park, Y. H. Ahn and C. Ruiz-Vargas, ―Imaging of photocurrent generation and collection in single-layer graphene,‖ Nano Lett., vol.9, No.5, pp. 1742-1746, 2009.
[65] T. Mueller, F. Xia, M. Freitag, J. Tsang and Ph. Avouris, ―Role of contacts in graphene transistors: a scanning photocurrent study,‖ Phys. Rev. B, vol. 79, no.
245430, 2009.
[66] F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y. Lin, J. Tsang, V.
Perebeinos and P. Avouris, ―Photocurrent imaging and efficient photon detection in a graphene transistor,‖ Nano Lett., vol. 9, no. 3, pp. 1039-1044, 2009.
[67] F. Xia, T. Mueller, Y. Lin, A. Valdes-Garcia and P. Avouris, ―Ultrafast graphene photodetector,‖ Nat. Nanotechnol., vol. 4, no. 12, pp. 839-843, 2009.
[68] N. M. Gabor et al, ―Hot carrier–assisted intrinsic photoresponse in graphene,‖
Science, vol. 334, pp. 648-652.
[69] M. C. Lemme, F. H. L. Koppens, A. L. Falk, M. S. Runder, H. Park, L. S. Levitov amd C. M. Marcus, ―Gate-activated photoresponse in a graphene p-n junction,‖
Nano Lett., vol. 11, pp. 4134-4137, 2011.
Schottky diodes,‖ Nano Lett., vol. 11, pp. 1863-1867, 2011.
[71] Y. An, A. Behnam, E. Pop and A. Ural, ―Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions,‖ App. Phys.
Lett., vol. 102, no. 013110, 2013.
[72] G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti and F. H. L. Koppens, ―Hybrid graphene–quantum dot phototransistors with ultrahigh gain,‖ Nature Nanotech., vol. 7, no. 6, pp. 363-368, 2012.
[73] Furchi, M. et al., ―Microcavity-integrated graphene photodetector,‖ Nano Lett., vol. 12, pp. 2773-2777, 2012.
[74] Gan, X. et al.,‖Strong enhancement of light-matter interaction in graphene coupled to a photonic crystal nanocavity,‖ Nano Lett., vol. 12, pp. 5626-5631, 2012.
[75] X. Gan et al., ―Chip-integrated ultrafast graphene photodetector with responsivity,‖
Nature Photonics, vol. 7, pp. 883-887, 2013.
[76] X. Wang, Z. Cheng, K. Xu, H. K. Tsang and J. Xu, ―High-responsivity graphene/silicon-heterostructure waveguide photodetectors,‖ Nature Photonics, vol. 7, pp. 888-891, 2013.
[77] A. Pospichil et al., ―CMOS-compatible graphene photodetector covering all optical communication bands,‖ Nature Photonics, vol. 7, pp. 892-896, 2013.
[78] W. Schottky,‖ Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter,‖
Zeitschrift fur Physik, vol. 118, pp. 539-592, 1942.
[79] N. F. Mott, ―Note on the contact between a metal and an insulator or semi-conductor,‖ Proc. Cambridge Philos. Soc., vol. 34, pp. 568-572, 1938.
[80] S. M. Sze, Physics of semiconductor Deivces, New York:Wiley, pp. 32-38, 1981.
[81] B. L. Anderson and R. L. Anderson, ―Fundamentals of Semiconductor Devices,‖
[85] Hideki Hasegawa et al., ―Properties of nanometersized metal-semiconductor interfaces of GaAs and InP formd by an in-situ electrochemical process,‖ J. Vac.
Sci. Technol. B, vol. 17(4), pp.1856-1866, 1999.
[86] J. L. Freeouf and J. M. Woodall, ―Schottky barriers: An effective work function model,‖ App. Phys. Lett., vol. 39, no. 9, 1981.
[87] V. Mikhelashvil, G. Eisenstein and R. Uzdin, ―Extraction of Schottky diode parameters with a bias dependent barrier height,‖ Solid-State Electronics, vol. 45, pp. 143-148, 2001.
[88] I. Jyothi et al., ―Temperature dependency of Schottky barrier parameters of Ti Schottky contacts to Si-on-Insulator,‖ Material Transactions, vol. 54 no. 9, pp.
1655-1660, 2013.
[89] M. A. Yeganeh and S. H. Rahmatollahpur, ―Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes,‖ J.
Semiconductors, vol. 31, no. 7, 2010.
[90] A. Turut et al., ―Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage,‖
Physics B, vol. 205, pp. 41-50, 1995.
[91] H. Y. Fan, and A. K. Ramdas, ―Infrared absorption and photoconductivity in irradiated silicon,‖ J. App. Phys., vol. 30, pp. 1127-1134, 1959.
[92] C. Scales and P. Berini, ―Thin-film Schottky barrier photodetector models,‖ IEEE J. Quantum Elecreon., vol. 46, no. 5, 2010.
[93] R. J. Archer and J. Cohen, ―Schottky-barrier monolithic detector having ultrathin metal layer,‖ U.S. Patent 3,757,123, 1973.
[94] M. Casalino , L. Sirleto , L. Moretti and I. Rendina, ―A silicon compatible resonant cavity enhanced photodetector working at 1.55μm,‖ Semicond. Sci.
Technol., vol. 23, no. 7, 2008.
[95] M. Kimata et al., ―Platinum silicide Schottky-barrier IR-CCD image sensors,‖ Jpn.
J. Appl. Phys., vol. 21, pp. 231-235, 1982.
[96] http://encyclopedia.che.engin.umich.edu/Pages/Reactors/CVDReactors/CVDReac tors.html [Accessed:29-Jun-2016]
[97] http://www.thinksrs.com/products/SR810830.htm [Accessed:29-Jun-2016]
[98] https://www.newport.com/f/solar-simulator-accessories [Accessed:29-Jun-2016]
transparent conductive electrode,‖ Nano Lett., vol.9, no. 12, pp. 4359-4363, 2009.
[100] W. Regan et al., ―A Transfer of Layer-area Graphene,‖ App. Phys. Lett., vol.96, no.
113102, 2010.
[101] V. Patil, A. Capone, S. Strauf and E-H. Yang, ―Improved photoresponse with enhanced photoelectric contribution in fully suspended graphene photodetecotrs,‖
Scientific Reports, vol. 3, no. 2791, 2013.
[102] X. Li, J. Zhou, Q. Wang and W. Guo, ―Exceptional high Seebeck Coefficient and Gas-Flow-Induced Voltage in Multilayer Graphene.‖
https://arxiv.org/ftp/arxiv/papers/1203/1203.0372.pdf [Accessed:30-Aug-2016]
[103] J. H. Seol et al., ―Two-dimensional phonon transport in supported graphene,‖
Science, vol. 38, pp. 213-216, 2010.
[104] X. Xu et al., ―Photo-Thermoelectric Effect at a Graphene Interface Junction,‖
Nano Lett., vol. 10, pp. 562-566, 2010.
[105] Y. C. Lin et al., ―Graphene annealing: How clean can it be,‖ Nano Lett., vol. 12, pp. 414-419, 2012.
[106] N. Liu, Z. Pan, L. Fu, C. Zhang, B. Dai and Z. Liu, ―The Origin of Wrinkles on Transferred Graphene,‖ Nano Res., vol. 4, no.10, pp. 996-1004, 2011.
[107] H. H. Kim et al., ―Substrate-induced solvent intercalation for stable graphene doping,‖ ACS Nano, vol. 7, no. 2, pp. 1155-1162, 2013.
[108] T. H. Bointon et al., ―Large-area functionalized CVD graphene for work function matched transparent electrodes,‖ Scientific Reports, vol. 5, no. 16464, 2015.
[109] K. F. Mak, L. Ju, F. Wang and T. F. Heinz, ―Optical spectroscopy of graphene:
From the far infrared to the ultraviolet,‖ Solid State Comm., vol. 152, pp.
1341-1349, 2012.
[110] F.-U. Bruckner and K. Schwerdtfeger, ―Single crystal growth with the Czochralski method involving rotational electromagnetic stirring of the melt,‖ J. Crystal
[Accessed:22-Aug-2016]
[114] 劉建廷, ―製作光捕捉型矽奈米結構與單晶矽薄膜應用於異質接面矽太陽能電 池,‖ 國立台灣大學光電工程學研究所碩士論文, 2015 年 6 月。
[115] 楊松庭, ―利用載子選擇層增進有機無機混成矽太陽能電池效率,‖ 國立台灣 大學光電工程學研究所碩士論文, 2015 年 7 月。
[116] G. K. Reeves and H. B. Harrison, ―Obtaining the specific contact resistance from transmission line model measurements,‖ IEEE Electron Device Lett., vol. EDL-3, no.5, pp. 111-113, 1982.
[117] C. Y. Chang and Y. K. Fang and S. M. Sze, ―Specific contact resistance of metal-semiconductor barriers,‖ Solid-state Electronics, vol. 14, pp. 541-550, 1971.
[118] M. A. Nazirzadeh et al., ―Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection,‖ Scientific Reports, vol. 4, no.
7103, 2014.
[119] K-T. Lin, H-L. Chen, Y-S. Lai and C-C. Yu, ―Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at
telecommunication wavelengths,‖ Nature Comm., vol. 5, no. 3288, 2014.
[120] I. Goykhman et al., ―Locally oxidized silicon surface-plasmon Schottky detector for telecom regime,‖ Nano Lett., vol. 11, no. 6, pp. 2219-2224, 2011.
[121] Y. P. Huang and L. A. Wang, ―In-line silicon Schottky photodetectors on silicon cored fibers working in 1550 nm wavelength regimes,‖ App. Phys. Lett., vol. 106, no. 191106, 2015.
[122] F. Raissi and M. M. Far, ―Highly Sensitive PtSi/Porous Si Schottky Detectors,‖
IEEE Sensors J., vol. 2, no.5, 2002.
[123] A. Rogalski, ―Infrared detectors: an overview,‖ Infrared Phys. & Tech., vol. 43, pp.
187-210, 2002.
[124] Jürgen H. Werner and Herbert H. Güttle, ―Temperature dependence of Schottky barrier heights on silicon,‖ J. App. Phys., vol. 73, no. 3, pp. 1315-1319, 1993.
[125] W. S. Wang, C. Ho and T. M. Chuang, ―Investigation of PtSi/p-Si Schottky barrier height using I-V-T technique,‖ Materials Chemistry and Physics, vol. 51, pp. 88-91, 1997.
7
著作列表[1] Chun-Chung Cheng, Hua-Yi Hsueh, Cheng-Chun Chang, and Ching-Fuh Lin,
―Photodetector Based on Graphene Technology,‖ Optics & Photonics Taiwan, International Conference2015 (OPTIC 2015), Hsinchu, Taiwan, Dec. 2015.
[2] Hua-Yi Hsueh, Shih-Jieh Lin, Li-Jen Chen, Chun-Chung Cheng, Kuan-Yu Chen, and Ching-Fuh Lin, ―A Promising Method for Fabricating Si Core Waveguide on Bulk Si Substrate,‖ Optics & Photonics Taiwan, International Conference 2014 (OPTIC 2014), National Chung Hsing University, Taichung, Taiwan, Dec. 2014.
[3] Li-Jen Chen, Shih-Che Hung, Hua-Yi Hsueh, Chun-Chung Cheng and Ching-Fuh Lin, ―Fabrication of CMOS-Compatible Low-Loss Si Waveguide Structures by KrF Excimer Laser Reformation System,‖ Optics & Photonics Taiwan, International Conference 2014 (OPTIC 2014), National Chung Hsing University, Taichung, Taiwan, Dec. 2014.