未來工作

因半導體產業發展迅速，國內外廠商皆相爭投入大量的資金與一 流的人材，要在國際半導體產業取得領先地位。故先進技術的研究創新 與穩定的產品品質，這兩項指標是在國際競爭市場上生存的必備條件。

如何強化製程能力並提昇產品良率是為當務之急，以便保有競爭優勢。

在晶片製程線寬愈來愈小的需求下，對於線寬微縮化與淺溝槽隔離製程 品質以及良率上的要求也更加的嚴苛。所以淺溝槽隔離製程的穩定與否 及製程條件是否最佳化是影響良率的主要原因，因此未來工作方向如下 所述:

1.將實驗求得之內墊氧化矽層溫度、內墊氧化矽層厚度及內墊氮化 矽層厚度條件運用於其他製程上，經三階段驗證展開確認效果，以提昇 其他製程良率。

2.藉由實驗求得之內墊氧化矽層溫度、內墊氧化矽層厚度及內墊氮 化矽層厚度實驗經驗，運用於新製程、新產品之開發。

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