第五章 結論與未來展望
5.1 結論
5.1.2 氧化釔電容器之電性
5.1.3 氧化釔電容器之漏電流機制
將 Al/Ti/Y2O3/Y2O3+Zr/Si (3 W)和 Al/Ti/ZrN/Y2O3/Y2O3+Zr/Si (3,6,9 W) 的電容器結構加熱至 300 K、325K、350 K、375 K、400 K 等溫度下，量測 電子從閘極注入和基板注入的漏電流大小。
其中以 Al/Ti/Y2O3/Y2O3+Zr/Si (6 W)在退火溫度為 550 ℃且溫度在 350 K ~ 400 K 時 ， 有 最 大 的 的 閘 極 注 入 之 蕭 基 能 障 為 1.15 eV 。 Al/Ti/ZrN/Y2O3/Y2O3+Zr/Si (3 W)在退火溫度為 850 ℃且溫度在 300 K ~ 400 K 時，有最大的的基板注入之蕭基能障為 1.03 eV。
5.2 未來展望
由於本實驗製作閘極氧化層的通氧量皆為固定，且有文獻指出不同的通 氧量可以改善閘極氧化層的品質，故可針對特性較好的疊層結構，進一步的 改變製作氧化層薄膜的通氧量，在對其電性加以討論，會對此薄膜更完整的 了解。另外本研究僅完成 MOSCAP 的結構，未來可將此結構製成 MOSFET，
並量測可靠度和載子遷移率等研究，必可對閘極氧化層 Y2O3摻 Zr 有更進一 步的了解。
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