結論
本實驗以Bottom－contact及Top－contact結構，加上熱蒸鍍方式沉積有 機半導體薄膜，成功地在晶圓上製作出以pentacene為主動層的有機薄膜電 晶體，其中Top-contact元件所得到載子移動速率μ＝0.0228cm2V-1s-1，開關 比（On/off ratio）約為 106~107，皆優於Bottom-contact的元件。在第一部份 的實驗中瞭解到，閘極介電層表面的潔淨度影響了元件的電性結果，經過 Clean/HMDS處理過之Top-contact元件其載子移動速率μ＝0.04 cm2V-1s-1， 由此可知，適度的丙酮清潔與HMDS的表面改質成功提高了有機薄膜 特性的影響，但很可惜由於製程中TEOS Oxide介電層除了本身品質不夠好 之外，在後續以PECVD方式沉積氮化矽做為阻障層時，基板 300℃的高溫 也導致電極金原子往介電層中擴散，造成介電層汙染，使得漏電流增大，
潰電壓（Breakdown voltage）與材料穩定等特性。於是我們首先評估以有 機金屬氣相沉積法成長之二氧化鉿薄膜特性，由C-V curve量測的結果得到 二氧化鉿飽和電容值為 830pF左右，由公式換算而得之介電係數約為 22.4，而一般文獻中所提到之介電係數大約是 15~25。由I-V curve來檢測薄 膜是否具備低漏電流性質與電壓操作的範圍，發現在-30 伏特以後，漏電 流已經達到1µA，此漏電流過大的情形導致後續製作成元件時，無法量測 到元件電性圖。未來的解決方式嘗試利用PECVD方式沉積氮化矽於二氧化 鉿表面，改善漏電流的特性，若要得到高電容特性與低漏電流的介電薄 膜，仍須以複合層結構並求得最佳化條件來製作元件。
第七章
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