第五章
結論
第五章 結論
本論文第二章是利用 pHEMT 0.15 μm 製程，實作一個 30GHz 的 次諧波注鎖式壓控振盪器，且在 VCO 後端加上一個緩衝放大器，使 得功率在 28～30GHz 達到 10dBm 以上，注入訊號為 7～7.5GHz，VCO 振盪頻率在 2 倍注入訊號之間，free running 下為 13～16GHz 之間，
利用交錯耦合電路 push-push 兩倍振盪頻 26～32GHz 之間，完成四倍 頻的架構，由於輸出返回損耗在-7dB 之間，輸出功率被抑制了一些，
且最後一級的的源級放大器已操作在飽和功率區，功率消耗太多，需 以後端電路實際應用再做考量。
第三章也是以 pHEMT 0.15 μm 製程，實作一個低雜訊降頻器，
以市面上的規格而言，轉換增益需達到 56dB，雜訊指數 0.6dB 以下，
以本實作而言按照整體架構仍會在前端加上兩級 LNA，除提高增益 外亦能抑制雜訊，不過本實作可換成額外增加一級 LNA 和一級中頻 放大器，因為 pHEMT 比 CMOS 的雜訊指數來得低，本實作只需要 額外一級 LNA 即可到雜訊指數的標準，後端在額外增加一級中頻放 大器比兩級都用 LNA 的面積小很多。
第四章則是以 CMOS 0.18μm 製程完成一個操作在 2.4GHz 的窄 頻低雜訊放大器，由於兩級 LNA 的 tank 有偏移，造成增益只有 13dB，
且在主動電感的部份應分開偏壓，以方便調諧零點的位置和 Q 值，
即可調整每一個所需要砍深零點的地方。
參考文獻
第二章：
[1] Mingquan Bao, Yinggang Li and H. Jacobsson, “A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology,” IEEE Journal of Solid-State Circuits, vol. 39, no. 8, pp. 1352-1355, Aug. 2004.
[2] Shuya Kishimoto, Kenichi Maruhashi, Masaharu Ito, Takao Morimoto, Yasuhiro Hamada, and Keiichi Ohata, “A 60-GHz-band subharmonically injection locked VCO MMIC operating over wide temperature range,” IEEE Microwave Symposium Digest, pp.1689-1692, June 2005.
[3] Belinda Piernas, and Kenjiro Nishikawa, “A Compact and Low-Phase-Noise Ka-Band pHEMT-Based VCO,” IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No.3, March 2003
[4] Jinho Jeong, Youngwoo Kwon, “Jinho Jeong, and Youngwoo Kwon,
“Injeciton-Locked Push-Push Oscillator at 72 GHz Band using Cross-Coupled HEMTs”, European Microwave Conference, pp. 587-590, 2003.
[5] Fan-Hsiu Huang, Chi-Hsien Lin, Hong-Yeh Chang, Yi-Jen Chan, “A low-power subharmonic injection-locked oscillator using E/D-mode GaAs PHEMTs for Ka-band applications,” in 2008 Asia Pacific Microwave Conference Proceedings, vol. x, Hong Kong/Macau, China, Dec. 2008.
[6] J. Jeong, Y. Kwon, “A Fully Integrated V-band PLL MMIC using 0.15um GaAs pHEMT Technology”, IEEE Journal of Solid-State Circuits, vol. 41, no. 5, pp.1042-1050, May. 2006.
[7] 張宇文, “高速除頻電路與正交相位振盪器之設計,” 國立交通大學碩士論文, 2005.
[8] B. Razavi, “RF Microelectronics, ” Upper Saddle River, NJ: Prentice Hall PTR, 1998.
第三章：
[1] Tino Copani, Santo A. Smerzi, Giovanni Girlando, and Giuseppe Palmisano, “A 12-GHz silicon bipolar dual-conversion receiver for digital satellite applications,” IEEE Journal of Solid-State Circuits, vol. 40, no. 6, pp. 1278–1287,
613–616.
[3] G. Girlando, S. A. Smerzi, T. Copani, and G. Palmisano, “A monolithic 12-GHz heterodyne receiver for DVB-S applications in silicon bipolar technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 53, pp. 952-959, Mar.
2005.
[4] P. Wallace, et. al., “A Low-Cost High-Performance MMIC Low-Noise Downconverter for Direct Broadcast Satellite Reception, ” IEEE Microwave and Millimeter-wave Monolithic Circuits Symp. Dig., pp.7- 10, 1990.
[5] N.Shiga et al., “MMIC family for DBS downconverter with pulse-doped GaAs MESFETs, ” GaAsIC Symposium Digest, pp.139-142,1991.
[6] Takeshi Sekiguchi et al., “Ultra Small Sized Low Noise Block Downconverter Module, ” IEEE International Microwave Symposium Digest, 1992, pp. 447-450 [7] J. Y. Lee and N. Y. Kim, “A Low-Power Ku-band Downconverter in
InGaP-GaAs HBT Technology, ” IEEE Microwave and Wireless Components Letters, vol. 15, no. 4, April. 2005.
[8] K. Hubbard, “A family of low cost high performance HEMT MMIC’s for commercial DBS applications,” in IEEE MTT-S Int. Symp. Dig., vol. 3, May 1995, pp. 1649–1652.
[9] C.Hutchinson, et. al., “Silicon Bipolar 12GHz Downconverter for Satellite Receiver, ” 1995 IEEE Bipolar Circuits and Technology Meeting, pp. 198-201.
第四章：
[1] L. H. Lu, Y. T. Liao and C. R. Wu, “A Miniaturized Wilkinson Power Divider with CMOS Active Inductors,” IEEE Microw. Wireless Compon. Lett., vol. 15, no. 11, pp. 775–777, Nov. 2005.
[2] H.-H. Hsieh, Y.-T. Liao, and L.-H. Lu, “A compact quadrature hybrid MMIC using CMOS active inductors,” IEEE Trans. Microw. Theory Tech., vol. 55, no.
6, pp. 1098–1104, Jun. 2007.
[3] J. N. Yang, Y. C. Cheng, and C. Y. Lee, “A Novel RF CMOS Active Inductor,”
IEICE Trans. Commun., Vol. E86-B, No.7, pp. 2190-2192, July 2003.（SCI, EI）
[4] C. C. Hsiao, “Improved Quality-Factor of 0.18-μm CMOS Active Inductor by a Feedback Resistance Design,” IEEE Microwave and Wireless Components Letters, vol. 12, no. 12, pp. 467-469, December 2002.
[5] Thanachayanont and S. S. Ngow, “Low voltage high Q VHF CMOS transistor-only active inductor, ” The Midwest Symposium on Circuits and Systems, pp.III-552-III-555 vol.3, 2002.
[6] U. Yodprasit and J. Ngarmnil, “Q-enhancing technique for rf CMOS active
inductor, ” in Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva.
The 2000 IEEE International Symposium on, 2000, pp. 589-592
[7] C.-P. Liang, P.-Z. Rao, T.-J. Huang, and S.-J. Chung, “Analysis and Design of Two Low-Power Ultra-Wideband CMOS Low Noise Amplifiers with Out-Band Rejection, ” IEEE Trans. Microwave Theory Tech., Vol. 58, Issue 2, pp.277-286, Feb. 2010.