7-1 結論
本研究使用金屬輔助無電鍍蝕刻製備矽奈米線陣列，利用 HF 與 AgNO3
當蝕刻溶液，找出最佳蝕刻參數 HF (6 M)和 AgNO3 (0.026 M)，可以在 1 小 時 50 分鐘內就可以蝕刻矽奈米線線長達 200 m。並使用 Poly(ethylene glycol) diacrylate (PEGDA)、Tetra(ethylene glycol) diacrylate (TEGDA)與 Ethylene carbonate (EC) 等三種化學材料，製備在常溫下為液態的聚合物，利用沉浸 與滴入的方式，均勻且完整填滿矽奈米線陣列，可以加強其機械性質。用製 備成功的矽奈米線，搭配使用鉻(Cr)當作蝕刻終止層，可以將矽奈米線陣列 獨立出來，開發出創新的矽奈米線陣列垂直轉移技術。而利用 ICP-RIE 雖然 有耗時費工的疑慮，但也可以結合 TSV(through-Silicon via)封裝技術，製作 成 3D IC。
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7-2 未來展望
蝕刻溶液的反應物濃度、溫度、時間、蝕刻面積都可能影響金屬輔助無 電蝕刻的結果，這些參數接息息相關，微調一參數可能造成奈米線線長、線 寬的差距，未來使用在不同元件，所需的面積大小不同，必須再微調各參數，
才能找出最佳化參數。
量測結果矽奈米線陣列的熱傳導係數介於 90 W/mK~ 120 W /mK之 間，低於塊材的 148 W/mK，證明了矽奈米線陣列的熱傳導係數比塊材還 小，未來若使用在熱電材料，將有助於提升熱電優值( Thermoelectric figure of merit )。其量測結果沒有文獻預期的低，可能有幾個因素造成：(1)由於正面 金屬線製作困難，因此留下底部的矽基材將會稀釋矽奈米線在奈米尺度下的 熱傳性質。(2) 試片頂端不平整可能造成量測誤差。(3) 矽奈米線陣列長短 不一造成量測上的誤差。(4) 製備出矽奈米線陣列線寬直徑為 20 m 以下。
(5) 摻雜矽奈米線使摻雜濃度提高。若能改善以上因素，可望提升此方法在 量測矽奈米線陣列的準確度並得到更低的熱傳導係數，可望未來能廣泛的使 用在奈米線陣列的量測。且若能提高矽奈米線摻雜濃度，使用圖案化矽奈米 線陣列技術，製成 p-n 對串聯結構，並且在 p 型與 n 型的矽奈米線陣列之間 作良好的絕緣保護，避免漏電流產生，將有助於矽奈米線熱電材料的元件製 作。
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