本論文的實驗分為兩個部分，第一部分藉由 XPS，搭配理論計算 研究 PEDOT:PSS/Si 介面的化學結構。第二部分，將 PEDOT:PSS 旋 塗在雜參濃度為 1016 cm-3的 n-type 砷化鎵上製成元件，並搭配表面電 場(Front Surface Field)對表面進行鈍化以及背電場效應(Back Surface Field)來減少載子的複合，藉此提高 Voc、Jsc，近一步提升整體效率。
5-1 PEDOT:PSS/Si 介面探討:
藉由XPS的S(2p)光譜，確認了PEDOT和PSS含量的比值在介面相 對多於PEDOT:PSS塊材。
而C(1s) 和Si(2p)的光電子光譜，我們會發現介面上的PEDOT未 飽合碳原子其化學環境發生改變，訊號藍移，再搭Si(2p)的光電子光 譜分析，會發現介面上的二氧化矽的矽原子發生紅移；另外，理論計 算結果顯示PEDOT發生化學反應時反應位子會在PEDOT的未飽合碳 原子上，而VASP的計算結果顯示PEDOT的未飽合碳會和二氧化矽的 氧原子進行反應。因此，藉由XPS和計算結果我們可以知道PEDOT 的未飽合碳原子可能會和二氧化矽的矽原子或氧原子進行反應。
由於，目前計算的模型相對較簡略，並沒有辦法明確分別出 PEDOT 是否是跟二氧化矽的氧或矽進行反應；因此，未來可以建構 較嚴謹的模型進行計算，來幫助釐清。
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5-2 PEDOT:PSS/GaAs 太陽能電池:
本實驗，證明了 FSF 確實會在表面產生電場，減少了載子複合機 率，因此，增加了短波長光的光電流；也證明了在吸收層的背面有 BSF 時，也會減少載子複合，使得長波長的光電流轉換增加。而藉由 FSF/BSF 以及簡單的旋轉塗佈製成方式，可以將 PEDOT:PSS/GaAs 太 陽能電池的 Jsc可以從 17.6 mA 提升到 19.31 mA; Voc從 690 mV 提升 到 770 mV；而 FF 可以從 0.70 提升到 0.80，整體效率提升到 11.86%。
由於 GaAs 大約 1μm 左右的厚度就可以把光都吸收光了，另外，
基本上 BSF 的厚度可以縮減至 10nm 左右；因此，未來我們將希望用 脈衝雷射沉積達到薄膜化的效果。
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